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951.
952.
J. Kh. Nurligareev K. M. Golant V. A. Sychugov B. A. Usievich 《Technical Physics》2006,51(8):1030-1034
The propagation of a pencil beam in a circuital system of tunnel-coupled waveguides is considered. It is shown that the beam periodically focuses into a point when moving along the trajectory. A maximal number of waveguides supporting the propagation of the beam can be estimated in simple terms. The cross-sectional area of the waveguides can be subdivided into three zone with the beam pulsing only in the central one. 相似文献
953.
O. M. Zhigalina K. A. Vorotilov A. S. Sigov A. S. Kumskov 《Physics of the Solid State》2006,48(6):1205-1207
Barium strontium titanate (BST) films on Si-SiO2-Ti-Pt substrates are prepared by chemical solution deposition upon crystallization on a sublayer. The structure of the BST films is investigated using transmission electron microscopy, high-resolution electron microscopy, and x-ray diffraction analysis. 相似文献
954.
E. D. Mishina N. É. Sherstyuk V. O. Val’dner A. V. Mishina K. A. Vorotilov V. A. Vasil’ev A. S. Sigov M. P. De Santo E. Cazzanelli R. Barberi Th. Rasing 《Physics of the Solid State》2006,48(6):1210-1213
Ferroelectric composite two-dimensional ferroelectric/aluminum oxide nanostructures were studied. A porous aluminum oxide matrix was used as a template into which a ferroelectric precursor was introduced, followed by annealing. The prepared nanostructures were studied using optical second harmonic generation and micro-Raman scattering. 相似文献
955.
Currents in high-resistivity semiconductors arising due to the rectification of space-charge waves are theoretically studied. Attention is primarily focused on the situation where the effective trap concentration is low. It is shown that, in this case, the dispersion law of trap-recharging waves changes from the inverse proportionality to a linear law and the drift waves no longer exist. In crystals with bipolar conduction, there are two modes of trap-recharging waves with a linear dispersion law. The dc and ac currents are found for the first time as functions of the trap concentration, the mobility and lifetime of carriers, the wavenumber of space-charge waves, and the applied electric field. 相似文献
956.
L. I. Bryukvina E. A. Ermolaeva S. N. Pidgurskiĭ L. F. Suvorova V. M. Khulugurov 《Physics of the Solid State》2006,48(1):68-72
It was detected for the first time that films consisting of a transition-metal-based structure form (via thermal diffusion
of intracrystalline impurities) on the surface of alkali-halide (LiF, NaF) crystals activated by transition metals Co, Ni,
or Mn. The thickness, density, and composition of the films are shown to be different, depending on the heat treatment conditions.
The crystals were annealed at temperatures varying from 473 to 1073 K in vacuum and air. The surface structures forming upon
annealing in vacuum exhibit magnetic properties. The films were studied by optical, x-ray fluorescence, and electron spectroscopy
to reveal the mechanisms of transition-metal film formation during thermal annealing. 相似文献
957.
The direct growth of ZnSe–CdSe solid solution onto metallic cathodes by electrodeposition from acidic aqueous sulphate solutions
is described. The plating process is studied by simple voltammetry, while the structure and composition of the electrolytic
deposits are investigated by X-ray diffraction. The experimental d-spacing values of the as-grown mixed lattice are compared to data from reference Zn
x
Cd1-x
Se pellets of standard composition, produced by a sintering method. The findings are supplemented with energy-dispersive X-ray
(EDX) elemental analysis. Thereupon, the variation of the mole fraction x in Zn
x
Cd1-x
Se, and the solid phase constitution of the electrodeposits are determined and correlated to the electrochemical conditions
of growth. The resulting films contain admixtures of CdSe compound and metallic Cd. 相似文献
958.
We fabricated high-quality InAlN/GaN heterostructures by metal–organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000 cm2/V s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (Ns) for the first time. Ns increased from 1.0×1012 to 2.7×1013 cm−2 when the Al composition increased from 0.78 to 0.89. 相似文献
959.
G.J. Babonas A. Reza I. Simkiene M. Baran U.O. Karlsson 《Applied Surface Science》2006,252(15):5391-5394
Optical properties of Fe-doped silica films on Si were investigated by ellipsometric technique in the region 1-5 eV. Samples were produced by sol-gel method. Precursors were prepared by mixing tetraethoxysilane (TEOS) solution in ethanol and water with aqueous solution of Fe-chloride or Fe-acetate. The coating solution was deposited on Si substrates by spin on technique. The size of Fe-containing nanometric-sized particles depended on technology and varied from 20 to 100 nm. Optical response of complex hybrid samples SiO2:Fe/Si was interpreted in a multi-layer model. In the inverse problem, the Maxwell equations were solved by transfer matrix technique. Dielectric function of Fe-doped silica layers was calculated in the model of effective media. Analysis of optical data has shown that various Fe-oxides formed. Experimental data for films obtained from precursors with Fe-acetate and annealed in hydrogen were well described by the model calculations taking into account a small contribution 1-5% of metal Fe imbedded in silica. The Fe/Fe-O contribution to optical response increased for samples grown from FeCl3-precursor. Ellipsometric data for Fe-doped silica films on Si were interpreted taking into account the structural AFM studies as well as the results of magnetic measurements. 相似文献
960.
In this paper we study the room temperature ferromagnetism reported on Mn-doped ZnO and ascribed to spin polarization of conduction electrons. We experimentally show that the ferromagnetic behaviour is associated to the coexistence of Mn3+ and Mn+4 in MnO2 grains where diffusion of Zn promotes the Mn4+→Mn3+ reduction. Potential uses of this material in spintronic devices are analysed. 相似文献