Entropy generation of turbulent Cu–water nanofluid flows inside thermal systems equipped with transverse-cut twisted turbulators

Journal of Thermal Analysis and Calorimetry - In the present study, numerical simulations have been carried out on thermal characteristics and second-law analysis of turbulent Cu–H2O...     

Force Chain Characteristics and Effects of a Dense Granular Flow System in a Third Body Interface During the Shear Dilatancy Process

In order to investigate the characteristics of force chains in a granular flow system, a parallel plate shear cell is constructed to simulate the shear movement of an infinite parallel plate and observe variations in relevant parameters. The shear dilatancy process is divided into three stages, namely, plastic strain, macroscopic failure, and granular recombination. The stickslip phenomenon is highly connected with the evolution of force chains during the shear dilatancy process. The load–distribution rate curves and patterns of the force chains are utilized to describe the load-carrying behaviors and morphologic changes of force chains separately. Force chains, namely, “diagonal gridding,” “tadpole-shaped,” and “pinnate” are defined according to the form of the force chains in the corresponding three stages.     

Can a Procedure for the Growth of Single-layer Graphene on Copper be used in Different Chemical Vapor Deposition Reactors?

In the last decade, catalytic chemical vapor deposition (CVD) has been intensively explored for the growth of single-layer graphene (SLG). Despite the scattering of guidelines and procedures, variables such as the surface texture/chemistry of catalyst metal foils, carbon feedstock, and growth process parameters have been well-scrutinized. Still, questions remain on how best to standardize the growth procedure. The possible correlation of procedures between different CVD setups is an example. Here, two thermal CVD reactors were explored to grow graphene on Cu foil. The design of these setups was entirely distinct, one being a “showerhead” cold-wall type, whereas the other represented the popular “tubular” hot-wall type. Upon standardizing the Cu foil surface, it was possible to develop a procedure for cm²-scale SLG growth that differed only by the carrier gas flow rate used in the two reactors.