Magnetic behavior of core–shell particles

We have prepared composite magnetic core–shell particles using the process of soap-free emulsion polymerization and the co-precipitation method. The shell of the synthesized composite sphere is cobalt ferrite (CoFe₂O₄) nanoparticles and the core consists of poly(styrene-co-methacrylic acid) polymer. The mean crystallite sizes of the coated CoFe₂O₄ nanoparticles were controlled in the range of 2.4–6.7 nm by the concentration of [NH₄⁺] and heated temperature. The magnetic properties of the core–shell spherical particles can go from superparamagnetic to ferromagnetic behavior depending on the crystalline sizes of CoFe₂O₄.     

Study on structure change of carbon nanotubes depending on different reaction gases

Aligned carbon nanotubes were grown by plasma-enhanced hot filament chemical vapor deposition using different reaction gases and they were investigated by scanning electron microscopy and transmission electron microscopy. It is found that the hollow carbon nanotubes were formed using methane and hydrogen as the reaction gases, but the bamboo-structured carbon nanotubes were grown when ammonia was added into the reaction gases, indicating that the structure of the aligned carbon nanotubes was changed depending on different reaction gases. On setting of diffusion of carbon, the effects of the nitrogenous gas on the structure change of carbon nanotubes are studied.     

Crystal and molecular structure of (μ-p-CH3C6H4C2S) (μ-n-C3H7S)Fe2(CO)6Co2(CO)6

The crystal and molecular structure of the complex containing cobalt-carbon and iron-sulfur cluster cores, (μ-p-CH₃C₆H₄C₂S) (μ-n-C₃H₇S)Fe₂(CO)₆Co₂(CO)₆, has been determined by X-ray diffraction method. The crystals are triclinic, space group P&1bar;, with a — 9.139(2), b=9.610(1), c-17.183(2) Å, α = 84.36(1), β-89.45(1), γ=88.15(1)°, V-1501.0 ų; Z=2, D_c=1.74 g/cm³. R=0.072, Rw=0.081. The results of the structure determination show a cobalt-carbon cluster core formed through the reaction of (μ-p-CH₃C₆H₄C₂S)(μ-n-C₃H₇S)Fe₂(CO)₆ with Co₂(CO)₈. In the cobalt-carbon cluster core, the bond length of the original C≡C lengthened to 1.324 Å which is close to the typical value of carbon-carbon double bond. The groups connecting the carbons of the cluster core are in cis position and lie on the opposite side of cobalt atoms. In this complex, the conformation of —SC₃H₇ is e-type, while that of —SC₂C₆H₄CH₃ is a-type.     

Theoretical investigation of magnetic property in paramagnetic neodymium gallium garnet under high magnetic field

The magnetic property in neodymium gallium garnet (NdGaG) is studied by the quantum theory. The ground configuration split states are calculated taking into account the spin–orbit interaction and crystal field effect. Taking account of the Nd–Nd exchange interaction, a good agreement between experimental and theoretical values can be obtained for the variation of the magnetic moment with the external magnetic field under “extreme” conditions (low temperature and high magnetic field). Moreover, the temperature dependence of magnetic moment and the magnetic susceptibility χ is also discussed. Above 30 K, the magnetization (M) shows a linear field (H_e) dependence.     

Properties of<Emphasis Type="Italic">B</Emphasis><Subscript>c</Subscript> meson

The mass spectrum ofcb meson is investigated with an effective quark-antiquark potential of the form -α_c/r +Ar ^νwith ν varying from 0.5 to 2.0. TheS andP-wave masses, pseudoscalar decay constant, weak decay partial widths in spectator model and the lifetime ofB _cmeson are computed. The properties calculated here are found to be in good agreement with other theoretical and experimental values at potential index,ν = 1     

The electron ionization rate in multilayered semiconductor structures

We present theoretical results of the electron impact ionization rate in GaAs/AlGaAs multiquantum well structures as a function of applied electric field for various geometries, i.e., well and barrier widths. In addition, we present preliminary measurements of the current-voltage characteristics of MBE grown devices which demonstrate very low leakage current as well as sharp breakdwon behavior. It is found that the net ionization rate, determined by averaging over the constitutent GaAs and AlGaAs layers, approaches the weighted average of the constituent bulk rates at high electric field strengths; the potential discontinuity is relatively unimportant. The electron ionization rate within the well regions alone is still higher than that in bulk GaAs, but is insufficiently enhanced to compensate for the much lower rate in the AlGaAs layers. As the field is lowered to 250.0 kV/cm, the average ionization rate in the multiquantum well structure becomes larger than in the bulk.     

Precise measurement of magnetic moment of short-lived β-emitting nuclei12B ( I π=1+, T 1/2=20.18 ms)

The spin polarized β-emitting nuclei¹²B (I ^π=1⁺,T _1/2=20.18 ms) were produced by the nuclear reaction¹¹B(d, p)¹²B and by the selection technique of the incident deuteron energy and the¹²B recoil angle following the nuclear reaction. The nuclear magnetic moment of the short-lived nuclei¹²B was measured by β-NMR with the β-NMR and β-NQR setup established for the first time in China. The nuclear magnetic moment of¹²B was determined to be μ=0.99993±0.00048 nm org=0.99993±0.00048 after the precise correction of the Knight shift.     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.