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41.
Traveling wave Ti:LiNbO3 Mach-Zehnder optical modulators with buried electrodes and etched grooves in the SiO2 buffer layer are analyzed by the finite element method. The tradeoff between the bandwidth BW and the half-wave voltage Vπ is discussed. The value of BW/Vπ is used to weight the total performance of the modulator. Taking a thick buffer layer and etching deep grooves in the buffer layer are demonstrated as two effective methods to improve the performance of the modulator. A 3-dB optical bandwidth of 18 GHz with half-wave voltage 5V at a wavelength of 1.55 pm could be obtained even though the electrode is not very thick. When the requirement of half-wave voltage is not very critical, a bandwidth of more than 100 GHz can be obtained. 相似文献
42.
The Hawking radiation of Dirac particles in an arbitrarily rectilinearly accelerating Kinnersley black hole with electromagnetic charge and cosmological constant is investigated by using the generalized tortoise coordinate transformation. Both the location and the temperature of the event horizon depend on the time and the polar angle. The Hawking thermal radiation spectrum of Dirac particles is also derived. 相似文献
43.
测量了Cr^4+,YAG、Cr^4+,Mg2SiO4晶体在室温和液氮温度下的荧光光谱,吸收光谱和激发态寿命,讨论了温度变化时,两种晶体中Cr^4+近红外辐射积分强度变化与激光发态寿命变化的关系,得出结论:在77K ̄300K范围内,Cr^4+的^3T2能级荧光辐射截面本身受温度影响不大,Cr^4+辐射荧光的变化,主要是由无辐射弛豫速率随温度变化而引起的。 相似文献
44.
45.
HypersurfacewithConstantMainCurvatureSymmetricFunctions¥WuBaoqiang;SongHongzao(XuzhouTeachersCollege,221009)(HenanUniversity,... 相似文献
46.
47.
A novel copolymer, poly(N‐hexyl‐3,7‐phenothiazylene‐1,2‐ethenylene‐2,6‐pyridylene‐1,2‐ethenylene) ( P3 ), containing N‐hexyl‐3,7‐phenothiazylene and 2,6‐pyridylene chromophores was synthesized to investigate the effect of protonation, metal complexation, and chemical oxidation on its absorption and photoluminescence (PL). Poly(N‐hexyl‐3,8‐iminodibenzyl‐1,2‐ethenylene‐1,3‐phenylene‐1,2‐ethenylene) and poly(N‐hexyl‐3,7‐phenothiazylene‐1,2‐ethenylene‐1,3‐phenylene‐1,2‐ethenylene) ( P2 ), consisting of 1,3‐divinylbenzene alternated with N‐hexyl‐3,8‐iminodibenzyl and N‐hexyl‐3,7‐phenothiazylene, respectively, were also prepared for comparison. Electrochemical investigations revealed that P3 exhibited lower band gaps (2.34 eV) due to alternating donor and acceptor conjugated units (push–pull structure). The absorption and PL spectral variations of P3 were easily manipulated by protonation, metal chelation, and chemical oxidation. P3 displayed significant bathochromic shifts when protonated with trifluoroacetic acid in chloroform. The complexation of P3 with Fe3+ led to a significant absorption change and fluorescence quenching, and this implied the coordination of ferric ions with the 2,6‐pyridylene groups in the backbone. Moreover, both phenothiazylene‐containing P2 and P3 showed conspicuous PL quenching with a slight redshift when oxidized with NOBF4. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 1272–1284, 2004 相似文献
48.
Xun Fu Danmei Wu Xiaodong Zhou Huaqiang Shi Zhengshui Hu 《Journal of nanoparticle research》2007,9(4):675-681
Hollow spherical molybdenum disulfide has been successfully synthesized via a solvothermal method using Cyanex 301 as sulfur
source and modification agent. The hollow spheres are characterized by transmission electron microscopy, scanning electron
microscopy, X-ray diffraction and Energy-Dispersive X-ray analysis. The influences of reaction conditions are also discussed
while a mechanism is proposed to explain the formation of the peculiar morphology. 相似文献
49.
Bai-suo JIN~ 《中国科学A辑(英文版)》2007,50(9):1303-1315
In the factor analysis model with large cross-section and time-series dimensions,we pro- pose a new method to estimate the number of factors.Specially if the idiosyncratic terms satisfy a linear time series model,the estimators of the parameters can be obtained in the time series model. The theoretical properties of the estimators are also explored.A simulation study and an empirical analysis are conducted. 相似文献
50.
本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1. 相似文献