全文获取类型
收费全文 | 22463篇 |
免费 | 3400篇 |
国内免费 | 2453篇 |
专业分类
化学 | 15927篇 |
晶体学 | 276篇 |
力学 | 1331篇 |
综合类 | 188篇 |
数学 | 2353篇 |
物理学 | 8241篇 |
出版年
2024年 | 42篇 |
2023年 | 407篇 |
2022年 | 600篇 |
2021年 | 766篇 |
2020年 | 839篇 |
2019年 | 824篇 |
2018年 | 700篇 |
2017年 | 714篇 |
2016年 | 1001篇 |
2015年 | 1002篇 |
2014年 | 1138篇 |
2013年 | 1581篇 |
2012年 | 1858篇 |
2011年 | 1990篇 |
2010年 | 1298篇 |
2009年 | 1268篇 |
2008年 | 1466篇 |
2007年 | 1353篇 |
2006年 | 1218篇 |
2005年 | 972篇 |
2004年 | 777篇 |
2003年 | 658篇 |
2002年 | 633篇 |
2001年 | 469篇 |
2000年 | 456篇 |
1999年 | 483篇 |
1998年 | 425篇 |
1997年 | 426篇 |
1996年 | 464篇 |
1995年 | 368篇 |
1994年 | 384篇 |
1993年 | 272篇 |
1992年 | 254篇 |
1991年 | 234篇 |
1990年 | 168篇 |
1989年 | 129篇 |
1988年 | 117篇 |
1987年 | 97篇 |
1986年 | 97篇 |
1985年 | 85篇 |
1984年 | 58篇 |
1983年 | 49篇 |
1982年 | 39篇 |
1981年 | 29篇 |
1980年 | 31篇 |
1979年 | 17篇 |
1978年 | 10篇 |
1977年 | 8篇 |
1975年 | 7篇 |
1973年 | 6篇 |
排序方式: 共有10000条查询结果,搜索用时 31 毫秒
191.
192.
采用循环伏安法,对SPEPt电极以及SPEAu-Pt电极上还原态CO2的电化学氧化行为研究表明,此类电极的电化学特性与光滑Pt电极一致:CO2在氢原子吸附电位区0~250mV(vs.RHE)处,可与电极上化学吸附的氢反应,生成还原态的CO2,通过线性扫描,还原态CO2即发生一不可逆电化学氧化过程(阳极剥离).在SPEPt系列及SPEAu-Pt系列上CO2的电化学行为表明,当SPEPt系列上Pt的载量为2.5mL的0.01mol·L-1H2PtCl6的Pt时,对还原态CO2的电催化活性最好,当Pt的载量相同时,在SPEAu-Pt上,催化剂对还原态CO2的电化学氧化行为比SPEPt电极更强,这是由于预先沉积的Au对后沉积的Pt有调制作用. 相似文献
193.
Let k be a subring of the field of rational functions in α, s which contains α
±1
,s
±1
. Let M be a compact oriented 3-manifold, and let K(M) denote the Kauffman skein module of M over k. Then K(M) is the k-module freely generated by isotopy classes of framed links in M modulo the Kauffman skein relations. In the case of , the field of rational functions in α, s, we give a basis for the Kauffman skein module of the solid torus and a basis for the relative Kauffman skein module of the
solid torus with two points on the boundary. We then show that K(S
1
× S
2
is freely generated by the empty link, i.e., .
Received: 20 October 2001 / Revised version: 20 March 2002 相似文献
194.
Songqing Zhao Yuzi Liu Shufang Wang Zhen Liu Ze Zhang Huibin Lu Bolin Cheng 《Applied Surface Science》2006,253(2):726-729
B-doped ZnO thin films have been fabricated on fused quartz substrates using boron-ZnO mosaic target by pulsed-laser deposition technique, and the mechanical properties have been studied by nanoindentation continuous stiffness measurement technique and transmission electron microscope (TEM). Nanoindentation measurement revealed that the hardness of B-doped ZnO films, 9.32 ± 0.90 to 12.10 ± 1.00 GPa, is much greater than that of undoped ZnO films and very close to that of traditional semiconductor Si. The mean transmittance (%) is larger than 81% in the visible range (380-780 nm) for all the films, and the Hall effect measurement showed that the carrier density is around 2 × 1020 cm−3 and the resistivity lower than 3 × 10−3 Ω cm. TEM characteristics show undoped thin films have more amorphous area between grains while the B-doped ZnO films have thin grain boundaries. We suggest that the grain boundaries act as the strain compensation sites and the decrease in thickness of grain boundaries enhances the hardness of the B-doped ZnO films. 相似文献
195.
Cheng Lu ZHANG Xiao Lei ZHU Ying Ge MA Li Wei ZOU 《中国化学快报》2006,17(2):163-164
12-Hydroxy-13-methylpodocarpa-9, 11, 13-trien-3-one 9 was isolated from the twigs ofCroton salutaris1. Many diterpenes exhibit significant bioactivities, such as antibac-terial and antitumour and 9 has a rare structure. In order to study the relationshipb… 相似文献
196.
In this paper, we applied multifractal modeling techniques to analyze the traffic data collected from the Beijing Yuquanying. The results indicated that multifractal characteristics obviously exist in the traffic system; the degree of fractality of these traffic data tends to increase as the traffic system becomes congested; the Hölder exponent that measures the local rate of fractality may be used as indicators to predict the presence of the traffic congestion. 相似文献
197.
A novel power generator has been achieved to convert vibration to electrical energy via the piezoelectric effect. The generator obtained by micro fabrication process mainly consists of silicon based frame and composite cantilever. The prototype tested at resonant vibration generates 1.15μW of effective power to a 20.4-kΩ resistance load. The potential of this work is to offer miniaturization solutions for power generators, and with the proposed method the ambient ubiquitous vibration can be harvested effectively as endless energy source to form an integrated self-powering system. 相似文献
198.
The non-resonant third-order non-linear optical properties of amorphous Ge20As25Se55 films were studied experimentally by the method of the femtosecond optical heterodyne detection of optical Kerr effect. The real and imaginary parts of complex third-order optical non-linearity could be effectively separated and their values and signs could be also determined, which were 6.6 × 10−12 and −2.4 × 10−12 esu, respectively. Amorphous Ge20As25Se55 films showed a very fast response in the range of 200 fs under ultrafast excitation. The ultrafast response and large third-order non-linearity are attributed to the ultrafast distortion of the electron orbitals surrounding the average positions of the nucleus of Ge, As and Se atoms. The high third-order susceptibility and a fast response time of amorphous Ge20As25Se55 films makes it a promising material for application in advanced techniques especially in optical switching. 相似文献
199.
The apparent Schottky barrier height (SBH) of the nickel silicide Schottky contacts annealed at different temperatures was investigated based on temperature dependence of I-V characteristic. Thermionic emission-diffusion (TED) theory, single Gaussian and double Gaussian models were employed to fit I-V experimental data. It is found the single Gaussian and double Gaussian SB distribution model can give a very good fit to the I-V characteristic of apparent SBH for different annealing temperatures. Also, the apparent SBH and the leakage current increase with annealing temperatures under reverse voltage. In addition, the homogeneity of interfaces for the samples annealed at temperatures of 500 and 600 °C is much better than that of the samples annealed at temperatures of 400, 700, and 800 °C. This may result from the phase transformation of nickel silicide due to the different annealing temperatures and from the low Schottky barrier (SB) patches. 相似文献