MONTE CARLO STUDY ON THE CRITICAL ADSORPTION POINT OF BOND-FLUCTUATED POLYMER CHAINS TETHERED ON ADSORBING SURFACES

 The behavior of three-dimensional bond fluctuation model chains tethered on an adsorbing flat surface was simulated by the Monte Carlo method. The dependence of the number of surface contacts M on the interaction strength e and the chain length N was investigated by a finite-size scaling law M = N[a₀ + a₁N^1/v_k + O((N ^1/v_k)²)] for e near the critical adsorption point e_c, i.e., k ≡(e-e_c)/e_c closes to 0. The critical adsorption point was estimated to be e_c = 0.93, and the exponents  = 0.49 and 1/v= 0.57.     

New flavonoids from Oxytropis myriophylla

Eight compounds were isolated from Oxytropis myriophylla. On the basis of spectral analyses, their structures were elucidated to be (6R,9R)-roseoside (1), (6R,9S)-roseoside (2), adenosine (3), myriophylloside B (4), myriophylloside C (5), myriophylloside D (6), myriophylloside E (7), and myriophylloside F (8). Five flavonoids (4-8) were new compounds, and the three known compounds were isolated from this plant for the first time.     

As(Ⅲ)-Cu(Ⅱ)协同抑制鲁米诺-MnO_4~-化学发光反应的研究及其应用

本文报道了As(Ⅲ)-Cu(Ⅲ)两种离子对鲁米诺-MnO_4~-化学发光反应的协同抑制作用,据此拟定了测定微量As(Ⅲ)的化学发光新方法。该法灵敏度较高,检测限为6.8×10~(-9)g/ml As(Ⅲ),选择性也较好,同时线性范围宽(7.0×10~(-9)～3.0×10~(-6)g/ml),测定手续简便。应用本法测定工业废水中的As(Ⅲ),结果满意。     

n型砷化镓微区光电化学腐蚀过程

在n-GaAs电解液界面,用聚焦He-Ne激光照射, 使n-GaAs表面发生微区光电化学腐蚀, 用计算机控制步进马达, 使试样在X-Y二维方向扫描移动, 能在晶片上得到刻蚀点直径2 μm的刻蚀图案. 研究了激光相对光强, KOH、H_2SO_4、KCl等刻蚀剡的浓度, 光腐蚀的时间, 电极电位等因素对腐蚀点的直径和深度的影响, 通过实验数据找出腐蚀过程的规律, 并用光电化学原理进行解释.     

细胞色素C的电化学行为研究

本文评述了细胞色素Ｃ电化学研究的发展概况，重点介绍了细胞色素Ｃ在促进剂作用下的电化学行为，促进剂种类，影响促进作用的因素及促进机理。     

用会聚偏振光测定双轴热拉伸有机玻璃板的双折射值的研究

介绍了用会聚偏振光测定双轴热拉伸定向有机玻璃板双折射值的原理和实验方法,并提出了对Kramer计算公式的简化和改进。测定了双折射值与拉伸度、拉伸温度的关系并分析了干涉图。     

拓扑指数法研究显色剂结构与反应性能关系

本文讨论了２９个不对称色酸双偶氮膦酸型显色剂的分子联接性指数，并将其与结构选择性因子相结合，用于偶氮类剂结构与铈显色反应灵敏度的相关性研究，讨论了显色剂结构对显色反应灵敏度的影响。     

含嘧啶环的双冠醚(Ⅳ)

前文已报道由啶环桥联两个苯并冠醚的双冠醚的合成与性质。由于嘧啶环的刚性较大,能把两个冠醚单元固定在有效地协同作用位置,因此以它们作中性载体的离子选择性电极具有较好的选择性。为了进一步研究这类双冠醚的性质,我们合成了四种嘧啶环桥联两个脂肪族冠醚的双冠醚,并经元素分析、IR、′HNMR鉴定。     

Process study of thermal plasma chemical vapor deposition of diamond,part II: Pressure dependence and effect of substrate pretreatment

The effect of pressure during thermal plasma chemical vapor deposition of diamond films has been investigated for a pressure range from 100 to 760 Torr. The maximum growth rate in our experiments occurs at 270 Torr for substrate temperatures around 1000°C. The existence of an optimum pressure for diamond deposition may he related to the balance between generation and recombination of atomic hydrogen and carbon-containing active species in front of the substrate. To estimate the concentrations of atomic hydrogen and methyl radicals under thermal plasma conditions, calculations based on thermodynamic equilibrium have been performed. This approximate evaluation provides useful guidelines because rapid diffusion results in a near frozen chemistry within the boundary layer. The effect of substrate pretreatment on diamond deposition depends on the type of substrate used. Two growth modes have been observed-layer growth and island growth of diamond crystals on various substrates. Screw dislocations have been observed in diamond deposition in thermal plasmas, and defects such as secondary nucleations are more concentrated along (III) directions than along (100) directions.