InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

The first fully operational mid-IR (3–5 μm) 256×256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detecor chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 595707 (2005).     

Enhanced hardness in B-doped ZnO thin films on fused quartz substrates by pulsed-laser deposition

B-doped ZnO thin films have been fabricated on fused quartz substrates using boron-ZnO mosaic target by pulsed-laser deposition technique, and the mechanical properties have been studied by nanoindentation continuous stiffness measurement technique and transmission electron microscope (TEM). Nanoindentation measurement revealed that the hardness of B-doped ZnO films, 9.32 ± 0.90 to 12.10 ± 1.00 GPa, is much greater than that of undoped ZnO films and very close to that of traditional semiconductor Si. The mean transmittance (%) is larger than 81% in the visible range (380-780 nm) for all the films, and the Hall effect measurement showed that the carrier density is around 2 × 10²⁰ cm⁻³ and the resistivity lower than 3 × 10⁻³ Ω cm. TEM characteristics show undoped thin films have more amorphous area between grains while the B-doped ZnO films have thin grain boundaries. We suggest that the grain boundaries act as the strain compensation sites and the decrease in thickness of grain boundaries enhances the hardness of the B-doped ZnO films.     

Nuclear forward scattering vs. conventional Mössbauer studies of atomically tailored Eu-based materials

With the decrease in size of devices, rapid characterization of nano-devices is an inevitable necessity. It is shown that Mössbauer spectroscopy using synchrotron radiation from the advanced photon source provides such a tool of investigation. Results are presented and compared for conventional Mössbauer and Nuclear Forward Scattering for ¹⁵¹Eu-doped magnesium sulfide as an example, especially at low concentrations.     

Counterion and solvent effects on the dilute solution viscosity of polystyrene ionomers

We present an analysis of data on the intrinsic viscosity [η] of sulfo-polystyrene ionomers in several solvents for a variety of sulfonation levels and counterions. For solvents of low dielectric constant, 2 < ε < 18, [η] decreases from the base polymer value [η]₀ with increasing substitution level. This behavior was attributed to intramolecular association of ionic dipoles. The ratio [η]/[η]₀ was found to depend on a single reduced variable α_Aα_Sx, where x is the fractional substitution, α_A depends only on the counterion, and α_S ∝ ε^?1 depends only on the solvent. For solvents of high dielectric constant, 36 < ε < 47, [η] increases approximately as x³, and counterion effects are small. This behavior was attributed to ionic dissociation, giving rise to a polyelectrolyte effect. Implications of the low ε results are discussed in relation to association-induced gelation behavior and possible generalizations of the reduced variables approach.     

Improved dust capture methods for crushing plant

The use of compressive crushing equipment such as gyratory crushers within minerals processing plants can potentially generate large quantities of dust. Remedies to this problem include the retrofitting of shrouds, enclosures, local exhaust ventilation (LEV) systems and water suppression systems. The single or combined application of these systems must be optimised to ensure they operate efficiently. It is desirable that the future design planning of such facilities include integrated dust suppression and/or removal systems to ensure material delivery rates are maintained and the welfare of the workforce is protected.     

First Total Synthesis of 12-Hydroxy-13-methylpodocarpa-9, 11, 13-trien-3-one

12-Hydroxy-13-methylpodocarpa-9, 11, 13-trien-3-one 9 was isolated from the twigs ofCroton salutaris1. Many diterpenes exhibit significant bioactivities, such as antibac-terial and antitumour and 9 has a rare structure. In order to study the relationshipb…     

Correlation between luminescent properties and structure organization in AlGaN/GaN superlattices annealed after erbium ion implantation

The evolution of the structure organization of MOCVD-grown AlGaN/GaN superlattices subjected to erbium ion implantation with an energy of 1 MeV and dose of 3 × 10¹⁵ cm^?2 and subsequent annealing is correlated with their photoluminescent properties. The structure organization is quantitatively estimated using parameter Δ (degree of violation of local symmetry), which is found via multifractal analysis of surface morphology patterns obtained with atomic force microscopy. It is shown that the implantation not only causes Ga segregation on the surface, but also changes the structure organization, which shows up in the finer grain structure compared with the starting one and disordering, as well as in an increase in Δ. As the annealing temperature rises from 700 to 800°C, Δ declines, indicating that the structure organization is improved, and the intensity of the dominating photoluminescence peak due to Er³⁺ ions (1.542 μm) grows. With a further increase in the annealing temperature to 1050°C, the structure organization degrades, domains get larger, voids 100–200 nm deep form, and the photoluminescence intensity drops. The formation of voids during high-temperature annealing is also substantiated by data for 230-keV proton scattering. It is thus established that the improvement of the superlattice structure organization activates erbium and causes the erbium-ion-related luminescence intensity to grow.