Investigation on the barrier height and inhomogeneity of nickel silicide Schottky

The apparent Schottky barrier height (SBH) of the nickel silicide Schottky contacts annealed at different temperatures was investigated based on temperature dependence of I-V characteristic. Thermionic emission-diffusion (TED) theory, single Gaussian and double Gaussian models were employed to fit I-V experimental data. It is found the single Gaussian and double Gaussian SB distribution model can give a very good fit to the I-V characteristic of apparent SBH for different annealing temperatures. Also, the apparent SBH and the leakage current increase with annealing temperatures under reverse voltage. In addition, the homogeneity of interfaces for the samples annealed at temperatures of 500 and 600 °C is much better than that of the samples annealed at temperatures of 400, 700, and 800 °C. This may result from the phase transformation of nickel silicide due to the different annealing temperatures and from the low Schottky barrier (SB) patches.     

充分发挥计算机辅助教学作用

本文就计算机在物理实验方面的辅助教学进行了较为深刻的研究和探索，并提出可行性的方案。     

氙灯泵浦新型晶体Nd∶S－VAP调Q激光器腔内倍频研究

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球上加权Bergman空间上的Schatten类Hankel算子

本文给出了超球上加权Ｂｅｒｇｍａｎ空间上Ｈａｎｋｅｌ算子属于Ｓｃｈａｔｔｅｎｐ－类（２≤ｐ＜＋∞）的一个充要条件，推广了文［１０］中的主要结果。     

Chen’ s theorem in arithmetical progressions

LetN be a sufficiently large even integer and

卤代化合物的碳—13化学位移模拟

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