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81.
周晓林  刘科  陈向荣  朱俊 《中国物理》2006,15(12):3014-3018
We employ a first-principles plane wave method with the relativistic analytic pseudopotential of Hartwigsen, Goedecker and Hutter (HGH) scheme in the frame of DFT to calculate the equilibrium lattice parameters and the thermodynamic properties of AlB2 compound with hcp structure. The obtained lattice parameters are in good agreement with the available experimental data and those calculated by others. Through the quasi-harmonic Debye model, obtained successfully are the dependences of the normalized lattice parameters a/a0 and c/c0 on pressure P, the normalized primitive cell volume V/V0 on pressure P, the variation of the thermal expansion α with pressure P and temperature T, as well as the Debye temperature \ThetaD and the heat capacity CV on pressure P and temperature T.  相似文献   
82.
In this paper, an MILP formulation is proposed for the design of a reverse logistics network based on a warehouse location–allocation model, which optimizes, simultaneously, the forward and reverse networks. A single product model with unlimited capacity is first defined. Subsequently, the model is extended to a multi-product capacitated recovery network model, where capacity limitations and a multi-product system can be considered. The proposed model is compared to published work in the field, where different model assumptions have been proposed. Two cases are described so as to gain a better insight into the model and allow a comparative analysis.  相似文献   
83.
Polycrystalline Pb(Zr0.55Ti0.45)O3 thin film was deposited on Pt/Ti/SiO2/Si(1 0 0) by radio-frequency-magnetron sputtering method, and the writing of charge bits on the surface of PZT thin film was studied by Kelvin probe force microscopy. It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones. When ferroelectric polarization switching occurs, the potential difference becomes even more remarkable. A qualitative model was proposed to explain the origin of the asymmetric charge writing. It is demonstrated that the internal field in the interface layer, which is near the ferroelectric/electrode interface in ferroelectric film, is likely to be the cause for the occurrence of this phenomenon.  相似文献   
84.
The quantum states are presented in these processions of fabricating poly-Si films. Amorphous silicon films prepared by PECVD has been crystallized by conventional furnace annealing (FA) and rapid thermal annealing (RTA), respectively. It is found that the thin films grain size present quantum states with the increasing of the gas flow ratios of SiH4, H2 mixture, substrate temperatures, frequency power, annealing temperature and time.  相似文献   
85.
Data Envelopment Analysis (DEA) offers a piece-wise linear approximation of the production frontier. The approximation tends to be poor if the true frontier is not concave, eg in case of economies of scale or of specialisation. To improve the flexibility of the DEA frontier and to gain in empirical fit, we propose to extend DEA towards a more general piece-wise quadratic approximation, called Quadratic Data Envelopment Analysis (QDEA). We show that QDEA gives statistically consistent estimates for all production frontiers with bounded Hessian eigenvalues. Our Monte-Carlo simulations suggest that QDEA can substantially improve efficiency estimation in finite samples relative to standard DEA models.  相似文献   
86.
We consider RKKY interaction in a quasi 2D system with nonparabolic dispersion. In our paper we calculate the RKKY range function assuming the in-layer confinement via effective dimensionality approach. We show, that indirect magnetic exchange in our system can be modelled by the effective spectral dimension which equals one.  相似文献   
87.
本文对一类重要的函数方程建立解稳定性定理,提出微商配置解,证明了收敛性.  相似文献   
88.
利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaNxAs1-x薄膜,并对图谱中所观察的光学跃迁进行了指认.在GaN0.005As0.995和GaN0.01As0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E11N.当N掺杂浓度达到 关键词: 压电调制反射光谱(PzR) xAs1-x薄膜')" href="#">GaNxAs1-x薄膜 分子束外延(MBE)  相似文献   
89.
This paper reports that the growth of RuOx(110) thin layer growth on Ru(0001) has been investigated by means of scanning tunnelling microscope (STM). The STM images showed a domain structure with three rotational domains of RuOx(110) rotated by an angle of 120℃. The as-grown RuOx(110) thin layer is expanded from the bulk-truncated RuOx(110) due to the large mismatch between RuOx(110) and the Ru(0001) substrate. The results also indicate that growth of RuOx(110) thin layer on the Ru(0001) substrate by oxidation tends first to formation of the Ru-O (oxygen) chains in the [001] direction of RuOx(110).  相似文献   
90.
工科物理实验课程改革与实践   总被引:4,自引:0,他引:4  
针对21世纪实验教学的要求,介绍了开展工科物理实验教学体系与教学内容改革的经验。  相似文献   
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