Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

Commuting and stable feedback design for switched linear systems

In the paper, commuting and stable feedback design for switched linear systems is investigated. This problem is formulated as to build up suitable state feedback controller for each subsystem such that the closed-loop systems are not only asymptotically stable but also commuting each other. A new concept, common admissible eigenvector set (CAES), is introduced to establish necessary/sufficient conditions for commuting and stable feedback controllers. For second-order systems, a necessary and sufficient condition is established. Moreover, a parametrization of the CAES is also obtained. The motivation comes from stabilization of switched linear systems which consist of a family of LTI systems and a switching law specifying the switching between them, where if all the subsystems are stable and commuting each other, then the total system is stable under arbitrary switching.     

掺钕聚甲基丙烯酸甲酯的光学特性

研究了制备的掺钕螯合物Nd(DBM)3Phen材料的吸收光谱、激发光谱、荧光光谱,应用Judd-Ofelt理论计算了该材料的强度参量．分析了钕离子激发态4F3／2的辐射寿命(631 μs)和4F3／2→4IJ′跃迁的受激发射截面和荧光分支比．     

“神龙一号”注入器研制

“神龙一号”注入器是直线感应加速器的束流源，它采用了感应叠加的高压加载方式，包括脉冲功率系统、感应腔、阴阳极杆、绝缘支撑、二极管和束流传输系统等子系统. 在研制中采用了径向绝缘支撑、对中支撑调节系统、类Pierce阴极等先进技术，以及二极管线圈内置和外径为800mm的铁氧体大环等创新. 参数测试显示，3.5MeV注入器达到了世界先进水平.     

Jensen's inequality for g-expectation: part 1

Briand et al. (Electron. Comm. Probab. 5 (2000) 101–117) gave a counterexample and proposition to show that given g,g-expectations usually do not satisfy Jensen's inequality for most of convex functions. This yields a natural question, under which conditions on g, do g-expectations satisfy Jensen's inequality for convex functions? In this paper, we shall deal with this question in the case that g is convex and give a necessary and sufficient condition on g under which Jensen's inequality holds for convex functions. To cite this article: Z. Chen et al., C. R. Acad. Sci. Paris, Ser. I 337 (2003).     

A New Two‐Dimensional Coordination Polymer of Mercury(II) with very High Thermal Stability

A 2D Hg^II coordination polymer containing ligands 1,2,4‐triazole (Htrz) and thiocyanate, [Hg(μ₃‐trz)(SCN)]_n ( 1 ) has been synthesized and characterized by elemental analysis and IR spectroscopy. The single‐crystal X‐ray data show the coordination number of Hg atoms is four and the ligand trz^? acts as a three‐fold donor. The thermal stability of compound 1 was studied by thermal gravimetric and differential thermal analyses. The composition and formation of the complex in methanol solution were found to be in support of its solid state structure.     

三核铜（I）配合物的合成与荧光光谱

室温下，通过双核配合物[Cu(dppm)(NO3)]2(dppm=双二苯基膦甲烷)与四苯基硼钠在甲醇和二氯甲烷混合溶剂中反应制备了三核铜(I)配合物[Cu3(dppm)3(NO3)(OH)](NO3)，经过红外光谱、热重分析、核磁和ES-MS等现代分析手段表征了配合物的物理化学性质，并进一步研究了配合物在室温下的荧光光谱特征。     

HI—V族化合物半导体的高能重离子辐照缺陷研究·

用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷.结果表明:两种注量辐照在GaP中均产生较高浓度的单空位.其浓度随着辐照注量的增大而增加;辐照也在InP中产生较高浓度的单空位.     

多结超导环在外磁场中的行为

分析和计算了双结超导环在无偏置电流时的磁通、环流、自由能与外磁场的关系.发现双结环与单结环在磁场中的行为有所不同.当两个结的Ic相等时，双结环在1＜β=2πLIcΦ0＜2时，若无偏置电流，总磁通Φ、环流I与外磁通Φe的关系仍然是非回滞的曲线.仅当β≥2时，曲线才出现回滞.另外双结环有两支解，并且每支解的周期为2Φ0. 关键词： 双结环 双支解 2Φ0周期 回滞