闪光Ⅰ号应用于X射线爆轰照相——研究金属射流的穿甲效应

闪光X射线照相技术是研究动载荷及其效应的重要测试手段,特别适用于研究物质在爆炸作用下的瞬变过程,本文介绍了闪光Ⅰ号加速器应用于X射线爆轰照相的基本状况,以及用于观察金属射流穿过高密度物质钨靶的实验技术。     

正方分布的4×4单模光纤熔锥耦合器耦合特性分析

本文以线性耦合波方程为基础,采用散射矩阵的方法讨论了具有正方分布的4×4单模光纤熔锥形耦合器的耦合特性,并与实验作了比较,得到了比较一致的结果。     

HL－1装置辅助加热等对能量约束的影响

在ＨＬ－１托卡马克上进行了辅助加热、加料、电流驱动的物理实验研究。在改善等离子体约束方面，某些实验取得了较好的结果。在适当的稳定放电条件下，低杂波电流驱动和弹丸注入辅助加料，均能使等离子体能量约束得到一定程度的改善，与相同密度条件下的欧姆加热放电相比，能量约束时间提高了约３０％。在电子回旋共振加热等离子体实验中，等离子体总能量明显增加，但与相同密度条件下的欧姆加热放电相比，能量约束时间减少了约２０％。     

Cluster and periodic DFT calculations of adsorption and activation of CO2 on the Cu(hkl) surfaces

The adsorption behavior and thermal activation of carbon dioxide on the Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0) surfaces have been investigated by means of density functional theory calculations and cluster models and periodic slabs. According to the cluster models, the optimized results indicate that the basis set of C and O atoms has a distinct effect on the adsorption energy, but an indistinct one on the equilibrium geometry. For the CO₂/Cu(hkl) adsorption systems studied here, the final structure of adsorbed CO₂ is near linear and the preferred modes for the adsorption of CO₂ onto the Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0) surfaces are the side-on adsorption at the cross bridge site with an adsorption energy of 13.06 kJ/mol, the side-on adsorption at the short bridge site (13.54 kJ/mol), and the end-on adsorption on the on-top site with C–O bonds located along the short bridge site (26.01 kJ/mol), respectively. However, the calculated adsorption energies from periodic slabs are lower as compared to the experimental data as well as the cluster model data, indicating that the periodic slab approach of generalized gradient approximation in the density function theory may be not suitable to obtain quantitative information on the interaction of CO₂ with Cu(hkl) surfaces.     

质子滴线区新的缓发质子先驱核121Ce

藉助核反应⁹²Mo(³²S ,3n)产生了未知的缓发质子先驱核¹²¹Ce ,并利用氦喷嘴快速带传输系统和“p-γ”符合方法对它进行了鉴别 .测定了¹²¹Ce的半衰期 ( 1.1±0 .1 )s,观测了它的β缓发质子能谱 ,粗略地估计了它的β缓发质子衰变道的分支比约为1% .首次观测了先驱核¹¹⁹Ba,¹²¹Ba和¹²²La经过β缓发衰变在“子核”中产生的低位能级到基态的γ 跃迁.     

卡尔曼滤波紫外光度法同时测定酱油、食醋中的山梨酸和苯甲酸

在酸性条件下，采用乙酸乙酯萃取、Na2HPO4溶液反萃取分离酱汪、食醋中的山梨酸、苯甲酸，卡尔曼滤波法计算结果，并与比值导数波谱法进行比较。结果表明，卡尔曼滤波法较地数波谱法有较高准确度和精密度，并能监测干扰物质存在与否。用于实际样品分析有更高的可靠性。     

分离变量法与等腰直角三角形波导的边值问题

根据叠加原理，讨论等腰直角三角形波导边值问题的IE波解和TM波解，纠正有关文献中的错误解法，指出分离变量法的适用条件。     

Modeling synchronization and suppression of spontaneous otoacoustic emissions using Van der Pol oscillators: effects of aspirin administration

Many of the aspects of the interaction of spontaneous otoacoustic emissions with external tones (suppression and synchronization) can be qualitatively simulated by the behavior of a single driven Van der Pol oscillator. Analytical and numerical investigations of a model of spontaneous otoacoustic emissions based on such an oscillator (with appropriate parametric changes in the nonlinear and negative damping components) lead to predictions of the nature of the changes in suppression and synchronization (frequency-locking) tuning curves when the levels of spontaneous otoacoustic emissions are modified. Observations of the suppression and synchronization of spontaneous otoacoustic emissions by external tones of different frequencies and levels were obtained while the levels of spontaneous emissions were altered by aspirin administration. Modeling an emission as a single Van der Pol oscillator qualitatively accounts for: (1) the reduction of the level of an external tone required to suppress the emission by a decibel amount equivalent to the level reduction induced by aspirin administration; (2) the broadening of the frequency-locking tuning curve of an emission whose level is reduced; and (3) the pulling of the emission frequency by an external tone. It does not account for: (1) the observed asymmetry in the slopes of the external-tone suppression curves (more gradual for frequencies of the suppressor tone higher, rather than lower, than that of the emission); and (2) the frequency pushing of the emission by an external tone.     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.