Absorption of solar radiation by solar neutrinos

We calculate the absorption probability of photons radiated from the surface of the Sun by a left-handed neutrino with definite mass and a typical momentum for which we choose |p₁| = 0.2 MeV, producing a heavier right-handed antineutrino. Considering the two transitions and we obtain the two oscillation lengths L₁₂ = 4960.8 m, L₂₃ = 198.4 m, the two absorption probabilities P₁₂^abs. = 2.5 x 10^-67, P₂₃^abs. = 1.2 x 10^-58 and the two absorption ranges au, au, using a neutrino mass differences of meV, meV and associated transition dipole moments. We collect all necessary theoretical ingredients, i.e. neutrino mass and mixing scheme, induced electromagnetic transition dipole moments, quadratic charged lepton mass asymmetries and their interdependence.Received: 4 November 2003, Revised: 23 March 2004, Published online: 5 May 2004     

Repetition rate multipliers for efficient implementation of multiphoton and pump-probe fluorescence microscopy

With the advances in pulsed laser systems, microscopic imaging techniques such as multiphoton and pump-probe fluorescence microscopy have developed into effective tools for investigating intensity and time-resolved phenomena inside biological systems. However, pulsed lasers used in these techniques usually are commercial systems with repetition frequencies of around 80 MHz. While these systems have proven to be adequate for multiphoton and pump-probe microscopic imaging applications, the temporal separation of the laser pulse train (around 12.5 ns) is long compared to the fluorescence lifetimes of many common fluorescence species. In this work, we present the designs of repetition rate multipliers based on passive optical components that can be used to increase the efficiency in multiphoton and pump-probe fluorescence microscopy. Depending on the lifetime of fluorescence molecules under investigation, the passive repetition rate multiplier can increase the duty cycle of multiphoton or pump-probe microscopy up to fourfold.     

Unified quantum logic

Unified quantum logic based on unified operations of implication is formulated as an axiomatic calculus. Soundness and completeness are demonstrated using standard algebraic techniques. An embedding of quantum logic into a new modal system is carried out and discussed.On leave of absence from Department of Mathematics, University of Zagreb, Pot. Pret. 165, YU-41001 Zagreb, Yugoslavia.     

STM image visualization of Si(1 1 1) 7 × 7 surface (graphic simulation and implementation)

The possibilities of graphic STM image simulation of a clean Si(1 1 1) 7 × 7 surface at atomic level are indicated. The presented procedure takes into account various types of deformation on the surface near the Fermi level in order to classify them and explain their origin. It also gives a clear hint to insert relevant physical phenomena in a suggested analysis. This goal is achieved exploiting the results of DAS (dimmer adatom stacing fault) model by means of standard mathematical programmes. A clean Si(1 1 1) 7 × 7 surface is considered as the representative example, but similar evaluation is possible for another non-metal and metal surfaces.     

Optical properties of Dy ions in sodium gadolinium tungstates crystal

Dy³⁺-doped NaGd(WO₄)₂ crystal with sizes of about Φ20×40 mm² was grown by the Czochralski technique along the (0 0 1) orientation. Polarized absorption spectra, fluorescence spectra, and fluorescence decay curve of Dy³⁺-doped NaGd(WO₄)₂ have been recorded at room temperature. Based on the Judd-Ofelt (J-O) theory, the intensity parameters from the measured line strengths were evaluated. The J-O parameters were used to predict radiative transition probabilities, radiative lifetimes and branching ratios for various excited levels of Dy³⁺-doped NaGd(WO₄)₂ crystal. The luminescent quantum efficiency of the ⁴F_9/2 level was determined to be approximately 63% for this material. The emission cross-section of the ⁴F_9/2→⁶H_13/2 transition was estimated by using the Füchtbauer-Ladengurg method.     

Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters β and τ involved in the function are estimated as a function of saturated dangling bond density . The experimental values of β, τ, and are compared with those calculated based on our model of light-induced defect creation in a-Si:H.     

NO dissociation pathways on Rh(1 0 0), (1 1 0), and (1 1 1) surfaces: A comparative density functional theory study

The chemisorption and dissociation pathways of NO on the Rh(1 0 0), (1 1 0), and (1 1 1) surfaces are studied by the plane-wave density functional theory (DFT) with CASTEP program. In addition, the electronic and geometrical effects that affect the NO dissociation reactions have been investigated in detail. The calculation results are presented as following: The effective activation energies of the best NO dissociation pathways on the Rh(1 0 0), the Rh(1 1 0), and the Rh(1 1 1) are 0.63, 0.66 and 1.77 eV, respectively. The activity of the Rh planes for NO dissociation is in the order of Rh(1 0 0) ≈ Rh(1 1 0) > Rh(1 1 1). The low dissociation barrier for Rh(1 0 0) and Rh(1 1 0) is associated with the existence of a lying-down NO structure which acts as a precursor for dissociation. By Mulliken population analysis and structure analysis, both electronic and geometrical effects are found to affect the NO dissociation reactions, but the geometrical effect exceed the electronic. The energy decomposition scheme has been used to provide further insight into the NO dissociation reactions. Based on the calculations, the interaction energy between N and O in the transition state on the Rh(1 1 1) is found much larger than that on the Rh(1 0 0) and the Rh(1 1 0). The major differences of should originate from the variation of the bonding competition effect.