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201.
After the nontrivial quantum parameters Ω n and quantum potentials V n obtained in our previous research, the circumstance of a real scalar wave in the bulk is studied with the similar method of Brevik and Simonsen (Gen. Rel. Grav. 33:1839, 2001). The equation of a massless scalar field is solved numerically under the boundary conditions near the inner horizon r e and the outer horizon r c . Unlike the usual wave function Ψωl in 4D, quantum number n introduces a new functions Ψωl n , whose potentials are higher and wider with bigger n. Using the tangent approximation, a full boundary value problem about the Schrödinger-like equation is solved. With a convenient replacement of the 5D continuous potential by square barrier, the reflection and transmission coefficients are obtained. If extra dimension does exist and is visible at the neighborhood of black holes, the unique wave function Ψωl n may say something to it.  相似文献   
202.
The coupling and radiation characteristics of an improved dielectric waveguide directional coupler with a tapering left-handed slab core located in the coupling region are analyzed by the staircase approximation method, which combines the building block approach and multi-mode network theory with a rigorous mode-matching procedure. Particular attentions are directed toward the radiation characteristics under different structural parameters of the coupler. Numerical results indicate that the proposed coupler is very promising by shortening the coupling length significantly while keeping the radiation loss at a low level.  相似文献   
203.
在考虑粒子间的自引力相互作用后,首先采用Parikh-Wilczek的半经典隧穿方法对带电粒子与不带电粒子在Reissner-Nordstrm-anti-de Sitter黑洞视界处的隧穿辐射特征进行了研究.其次,推广复路径方法对该黑洞的辐射谱进行研究.两种方法所得的结果都支持Parikh-Wilczek的观点,即黑洞的隧穿率Bekenstein-Hawking熵变有关,真实的辐射谱不是纯热谱.  相似文献   
204.
We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations (TDs) in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy (TEM) measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.  相似文献   
205.
In this letter, we develope a control and image processing system for Streak Tube Imaging Lidar (STIL). In the system, the data acquisition card control and the software interface are programmed in Visual Basic (VB) while the image processing is finished by MATLAB. A STIL imaging experiment is carried out in the laboratory. We obtained the intensity and range images of targets with pseudo color by image processing and reconstruction for a set of raw streak images of targets at different distances acquired by STIL. The range resolution is better than 2 centimeters.  相似文献   
206.
李鑫  张梁  羊梦诗  储修祥  徐灿  陈亮  王悦悦 《物理学报》2014,63(7):76102-076102
运用密度泛函B3LYP/6-31G+(d)方法对gg构象的低聚壳聚糖进行了结构优化、频率计算和电子结构,并用更高精度的WB97XD/6-311+G(d,p)方法计算了平均结合能及零点能校正,分析了热力学性质.结果表明,由于低聚壳聚糖中的氢键作用,使其形成螺旋结构;聚合度的增加,使平均结合能随之下降,结构的稳定性增强;在降解过程中,均为放热反应,验证了利用降温来提高降解产率的实验的可行性;此外,聚合度的增加,使能隙减小且快速收敛于聚合度为7的6.99 eV,稳定的反应活性与实验相符;HOMO、LUMO的电子密度分布表明,化学活性集中在C2位的氨基、C6位的羟基以及链的两端位置.该结果对低聚壳聚糖模型的建立和低聚壳聚糖降解过程、活性位置以及物理化学属性的尺寸依赖等现象的研究有着指导意义.  相似文献   
207.
The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H2O2)‐based etchants. Then, after etching the Mo layer, SF6 plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, VGS = ±30 V, VDS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   
208.
含芳香环的氨基酸残基多处于蛋白质的疏水内核或者是蛋白质与配体的结合部位,这些残基间的非共价键相互作用对于蛋白质结构的稳定性和生物的特异性识别有重要意义.因此,在蛋白质的核磁共振研究中,芳香基团被认为是一个研究蛋白质结构动力学的潜在探针.但是由于芳香基团的1H-13C HSQC谱的灵敏度较低,目前,利用核磁共振对其进行研究乏善可陈.造成这一现象的主要原因可能在于芳香环体积较大,往往存在慢的翻转运动,导致其NMR信号被展宽.作者利用CPMG-INEPT HSQC序列可以有效地减小慢运动影响的特征,将其应用到了GB1蛋白质芳香环的1H-13C HSQC谱中,有效的增强了芳香基团HSQC谱信号的灵敏度,得到了部分在常规HSQC中无法观测的信号.  相似文献   
209.
Multidimensional high-damping earthquake isolation device (MHEID) for long-span reticulate structure is an innovative passive vibration control device. In this paper, the results of horizontal and vertical property tests are presented first and then effects of excitation frequency, displacement on MHEID are studied. In order to consider the effects of excitation frequency, displacement amplitude and temperature on MHEID, a new mathematical model, i.e., fractional-derivative equivalent standard solid model, is put forward to describe the dynamic properties of MHEID precisely in both horizontal and vertical directions. Then, horizontal and vertical pseudo-dynamic tests on structures with and without MHEID are conducted. It can be seen from the experimental results that MHEID can obviously reduce the displacement responses, acceleration responses and input forces of the long-span reticulate structure. In order to analyze the earthquake isolation effect of MHEID on long-span reticulate structures, the dynamic responses are simulated by using a new dynamic response analysis method. The numerical results fit well with the experimental results and it is indicated that the proposed method can simulate the dynamic responses of the long-span reticulate structure.  相似文献   
210.
<正>We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator(SOI) dual-coupled micro-ring embedded with p-i-n diodes.A crosstalk of -23 dB is obtained in the 20-μm-radius micro-ring with the well-designing asymmetric dual-coupling structure.By optimizations of the doping profiles and the fabrication processes,the sub-nanosecond switch-on/off time of400 ps is finally realized under an electrical pre-emphasized driving signal.This compact and fast-response micro-ring switch,which can be fabricated by complementary metal oxide semiconductor(CMOS) compatible technologies,have enormous potential in optical interconnects of multicore networks-on-chip.  相似文献   
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