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971.
972.
采用溶剂热法制备出铜铟铝硒Cu(In,Al)Se2 (CIASe)粉末,然后滴涂铜铟铝硒CIASe浆料获得前驱体薄膜,最后通过硒化/硫化过程制备出铜铟铝硒CIASe和铜铟铝硒硫CIASeS薄膜.通过XRD、SEM、XRF及光吸收等表征,发现所制备的薄膜为单相的黄铜矿结构,具有(112)择优取向.同时,在使用硫元素替代硒之后,薄膜的XRD主峰向高的2θ角度漂移,多孔薄膜也变得更加致密.薄膜带隙值也增加到更为合适的范围,从1.21 eV增加到1.33 eV,这也说明了硫化过程有利于提高CIASeS薄膜的质量. 相似文献
973.
974.
通过带有PEG官能团的双丙烯酸酯大分子单体的RAFT环聚合反应合成含有十一元环重复结构的PEG大分子刷.不同PEG长度的连接1,2,3-三氮唑的双丙烯酸酯大分子单体通过点击化学反应合成.PEG侧链的较大位阻效应影响双丙烯酸酯大分子单体的聚合行为,以致于双丙烯酸酯大分子单体优先进行环化聚合反应而不发生交联反应.核磁数据和凝胶渗透色谱证明高效的环化聚合反应,而且没有副反应发生.PEG大分子刷在紫外光激发下有较强的荧光,而荧光则强烈依赖于聚合物刷的浓度,这归因于环聚合物在水中的聚集.PEG大分子刷的荧光能被DNA淬灭. 相似文献
975.
We introduce a set of multi-way dual Cheeger constants and prove universal higher-order dual Cheeger inequalities for eigenvalues of normalized Laplace operators on weighted finite graphs. Our proof proposes a new spectral clustering phenomenon deduced from metrics on real projective spaces. We further extend those results to a general reversible Markov operator and find applications in characterizing its essential spectrum. 相似文献
976.
目的 评价低渗温热腹腔灌注化疗治疗恶性腹腔积液的疗效及不良反应。方法 行腹腔穿刺置单腔中心静脉导管,外接引流袋,记录腹水引流量,当日排放腹水1 500ml 后,予加热至43~45℃注射用双蒸馏水1 000ml 行腹腔灌注,次日重复放液1 500ml,再予加热至43~45℃注射用双蒸馏水1 000ml 行腹腔灌注,并于灌注后腹腔注入顺铂60mg、氟尿嘧啶500mg 并封管,治疗期间常规给予简单水化、对症止吐等治疗。结果 31 例恶性腹腔积液患者共完成低渗温热腹腔灌注化疗42 周期,完全缓解7例,部分缓解15,稳定5 例,进展4 例,完全缓解+ 部分缓解占70.97%。中位进展时间(TTP)3.6个月(2~9 个月), 中位生存期(MST)5.6 个月。毒副反应以消化道反应为主。结论 低渗温热腹腔灌注化疗治疗恶性腹腔积,在延长患者的生存期、提高生活质量方面效果较好,临床上可推荐应用。 相似文献
977.
Qing Wang Bo Liu Yangyang Xia Yonghui Zheng Ruru Huo Min Zhu Sannian Song Shilong Lv Yan Cheng Zhitang Song Songlin Feng 《固体物理学:研究快报》2015,9(8):470-474
Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb2Te3 tie line, the binary compound Sb2Te3 is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb2Te3, called Cr–Sb2Te3 (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb2Te3 without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb2Te3. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb2Te3 with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
978.
Yan Guan Dayu Zhou Jin Xu Xiaohua Liu Fei Cao Xianlin Dong Johannes Müller Tony Schenk Uwe Schroeder 《固体物理学:研究快报》2015,9(10):589-593
A wealth of studies have confirmed that the low‐field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro‐mechanism. Recently, HfO2 thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub‐coercive polarization reversal properties were investigated for 10 nm thick Si‐doped HfO2 thin films. The applicability of the Rayleigh law to ultra‐thin ferroelectric films was first confirmed, indicating the existence of a multi‐domain structure. Since the grain size is about 20–30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
979.
Back contact–absorber interface modification by inserting carbon intermediate layer and conversion efficiency improvement in Cu2ZnSn(S,Se)4 solar cell 下载免费PDF全文
Fangqin Zeng Kaiwen Sun Li Gong Liangxing Jiang Fangyang Liu Yanqing Lai Jie Li 《固体物理学:研究快报》2015,9(12):687-691
Carbon layers have been employed as intermediate layers between Mo back contact and Cu2ZnSn(S1–xSex)4(CZTSSe) absorber film prepared by sol–gel and post‐selenization method. Carbon layers with appropriate thickness can significantly inhibit the formation of MoSe2 and voids at bottom region of the absorber, and therefore reduce the series resistance remarkably. The conversion efficiency can be boosted by the introducing of the carbon layer from 6.20% to 7.24% by enhancement in short current density, fill factor and open voltage in comparison to the reference sample without carbon layer. However, excess thickness of carbon layer will worse device performance due to the deteriorated absorber crystallinity. In addition, the time‐resolved photoluminescence analysis shows that inserting the carbon layer with suitable thickness does not introduce recombination and lower minority lifetime. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
980.