Bounds on the maximum numbers of clear two-factor interactions for 2^{(n_1 + n_2 ) - (k_1 + k_2 )} fractional factorial split-plot designs

Fractional factorial split-plot (FFSP) designs have an important value of investigation for their special structures. There are two types of factors in an FFSP design: the whole-plot (WP) factors and sub-plot (SP) factors, which can form three types of two-factor interactions: WP2fi, WS2fi and SP2fi. This paper considers FFSP designs with resolution III or IV under the clear effects criterion. It derives the upper and lower bounds on the maximum numbers of clear WP2fis and WS2fis for FFSP designs, and gives some methods for constructing the desired FFSP designs. It further examines the performance of the construction methods.     

Sonogashira alkynylation of unprotected 8-brominated adenosines and guanosines: fluorescence properties of compact conjugated acetylenes containing a purine ring

A practical Sonogashira alkynylation protocol for the preparation of 8-alkynylated adenosines and guanosines has been developed. Protection of the sugar hydroxyl substituents is not required; protection hinders the purification of these products. A preliminary fluorescent study is reported, which shows that the presence of a substituent on the phenylene ring influences the fluorescent properties considerably, an outcome that could be utilized in biological applications.     

Confinement in a planar waveguide with porous silicon omnidirectional mirrors as confining walls

We present the design and study of waveguide structures based on porous silicon where the light confinement is not due to the usual total reflection effect but to the use of photonic crystals (PCs) as confining walls. These PC are omnidirectional mirrors (OMs), consisting of the periodic repetition of two porous silicon layers with different refractive indices and thicknesses. They reflect the radiation for all angles of incidence within a frequency range called the omnidirectional band gap (OBG). We have followed the PC formalism to investigate the properties of the OM as a multimode waveguide: the number of modes within the band gap, their field spatial distribution and their confinement as a function of the frequency and the core thickness.     

Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si

The influence of processing parameters on the electrical characteristics of RuO₂/LaAlO₃/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO₃ on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result is explained by oxygen ability to heal oxygen vacancies in the LaAlO₃ film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO₃ on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime. PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc     

Smart Geodesic Tracing in GRworkbench

We have developed a new tool for numerical work in General Relativity: GRworkbench. We discuss how GRworkbench's implementation of a numerically-amenable analogue to Differential Geometry facilitates the development of robust and chart-independent numerical algorithms. We consider, as an example, geodesic tracing on two charts covering the exterior Schwarzschild space-time.     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

Every diassociative A-loop is Moufang

An A-loop is a loop in which every inner mapping is an automorphism. A problem which had been open since 1956 is settled by showing that every diassociative A-loop is Moufang.

     

Can Millimeter Waves Generate Electroporation?

Analysis of the field distributions in a single biological cell under electromagnetic wave is given. With Debye approximation, the dielectric relaxation of each part of the cell, including the extracellular and cellular media, the cell membrane and the nuclear membrane, was taken into account. Making use of some typical parameters for a cell, the voltage across nuclear and cytoplasma membranes under electromagnetic waves are calculated up to millimeter wave frequency range. The calculated result indicates that it is unlikely to generate electroporation by present available millimeter wave sources.     

A comprehensive study of the long pulse Nd:YAG laser drilling of multi-layer carbon fibre composites

The results of an extensive experimental study of the free running Nd:YAG laser drilling of a multi-layer carbon fibre composite, where adjacent layers have differently orientated fibres, are reported. For holes drilled with the laser operating in fixed-Q mode at 1064 nm, parallel sections of blind holes illustrating discontinuities in the hole size along a given section direction will be shown to occur at the interface between adjacent layers. An explanation for this effect is proposed. Detailed single pulse drilling characteristics will be presented illustrating the exit hole diameter as a function of pulse energy and material thickness. These characteristics illustrate a ‘stable' drilling regime in which the exit hole diameters are least sensitive to changes in pulse energy or material thickness and a less ‘stable' regime in which they are more strongly dependent on these parameters. Drilling characteristics will be given for two different beam qualities, illustrating the greater drilling depth and reduced hole size achievable with an improved beam quality. Finally holes drilled through a 2 mm thick sample of material with multiple pulses are considered. Size distribution curves for entrance and exit holes will be presented. The total energy required (number of pulses × pulse energy) to drill through 2 mm thick material will be reported as a function of pulse energy in stationary air and argon atmospheres and in a partial vacuum, illustrating a threshold energy which is dependent upon the drilling atmosphere. The threshold energies will be discussed with reference to plasma formation and the reactivity of the drilling atmosphere.