Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1>Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.     

物理美学对物理教学的意义

在实施新课程改革的大背景下,运用理论与实践相结合的方法就物理美学对物理教学的意义做了论述,以引起同行们对物理美学研究及其应用的关注．     

Improved interframe registration based nonuniformity correction for focal plane arrays

In this paper, an improved interframe registration based nonuniformity correction algorithm for focal plane arrays is proposed. The method simultaneously estimates detector parameters and carries out the nonuniformity correction by minimizing the mean square error between the two properly registered image frames. A new masked phase correlation algorithm is introduced to obtain reliable shift estimates in the presence of fixed pattern noise. The use of an outliers exclusion scheme, together with a variable step size strategy, could not only promote the correction precision considerably, but also eliminate ghosting artifacts effectively. The performance of the proposed algorithm is evaluated with clean infrared image sequences with simulated nonuniformity and real pattern noise. We also apply the method to a real-time imaging system to show how effective it is in reducing noise and the ghosting artifacts.     

Effect of sputtering power on surface topography of dc magnetron sputtered Ti thin films observed by AFM

Titanium films were deposited on glass substrates at room temperature by direct current (dc) magnetron sputtering at fixed Ar pressure of 1.7 Pa and sputtering time of 4 min with different sputtering power ranging from 100 to 300 W. Atomic force microscopy (AFM) was used to study topographic characteristics of the films, including crystalline feature, grain size, clustering and roughening. The amorphous-like microstructure feature has been observed at 100-150 W and the transition of crystal microstructure from amorphous-like to crystalline state occurs at 200 W. The increase in grain size of Ti films with the sputtering power (from 200 to 300 W) has been confirmed by AFM characterization. In addition, higher sputtering power (300 W) leads to the transformation of crystal texture from globular-like to hexagonal type. The study has shown that higher sputtering power results in the non-linear increase in deposition rate of Ti films. Good correlativity between the surface roughness parameters including root mean square (RMS) roughness, surface mean height (Ra) and maximum peak to valley height (P-V) for evaluating the lateral feature of the films has been manifested. Surface roughness has an increasing trend at 100-250 W, and then drops up to 300 W.     

A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions.Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er3+ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er3+ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200° C is needed to optically activate Er3+,which may be the main obstacle to impede the application of Er-doped silicon nitride.     

Non-Destructive In-Situ Study of White and Black Coating on Painted Pottery Sherds From Bancun Site (Henan,China) by Raman Microscopy

Abstract

Pottery sherds from the archaeological site of Bancun (Henan, China) were analyzed by Raman microscopy and the pigments used in the coating of this ancient (c. 4000–5000 BC) pottery were determined. It was found that bauxite was used to make the white pigment. The black coating was identified as a magnetite and its particle size was in the nanometer range. This work also showed that the size of pigment had influence on the color of the coating. In principle, Raman spectra could be used not only to identify the mineral source of the pigment but also to estimate the particle size of the pigments.     

A new method for removing impulse noise based on noise space characteristic

This paper proposes a new method for eliminating impulse noise. Based on the space characteristic of object and noise, three kinds of basic noise patterns are introduced to describe noise and detect noise candidates. Correspondingly, noise removal operators are presented to remove the impulse noise. Extensive experiment results have shown that the proposed method is better than some of the state-of-the-art methods.     

液芯光纤中溶液吸收和荧光的性质对CS2受激拉曼散射阈值的影响

利用液芯光纤技术研究了不同浓度的β-Carotene的CS2溶液的吸收与荧光的特性对CS2的一、二阶Stokes谱线阈值的影响.实验发现随溶液浓度(10-8-10-6 mol/L)增加,CS2的一阶Stokes谱线的激发阈值相对变高;并且与纯CCS2芯液的受激拉曼散射相比较,在低抽运能量激发下,就观察到CS2的二阶Stokes谱线.这主要是由于在CS2的受激拉曼谱线产生的过程中,β-Carotene的CS2溶液的吸收和荧光共同影响了CS2的一、二阶Stokes谱线的阈值.我们进行了理论上的拟合与分析,其结果与实验符合很好.