约束梁柱构件抗火性能研究进展

约束构件抗火性能和抗火设计是近年国内外相关学者关注的热点之一.笔者简要介绍了约束构件(包括约束梁、约束柱)抗火性能所取得的成果,总结了约束构件在火灾下的工作行为、抗火性能研究以及抗火设计方法的进展,指出了约束构件抗火研究目前存在的主要问题,并对下一步工作进行了展望.     

电子闪光灯光路变换的研究

本文主要论述了直接利用电子闪光灯为光源，产生垂直反射偏振光的原理、方法及在刑事摄影中的应用。通过理论研究和试验，设计出了电子闪光灯光路变换系统，解决了直接利用电子闪光灯为光源的拍摄案件现场某些光滑非金属物体时，物体表面产生强烈反射光线或反射光带和对人犯摄影、物证摄影时的强烈阴影干扰，以及无法直接用以电子闪光灯为光源，对遗留在案件现场上的痕迹进行垂直反射摄影的困难。     

微珠析相微萃取-石墨炉原子吸收法测定岩石样品中痕量铬

采用二苯碳酰二肼为络合剂,正戊醇为萃取剂,乙醇为助溶剂,建立了微珠析相微萃取-石墨炉原子吸收法测定地质样品中痕量Cr的分析方法。实验详细探讨了微珠析相微萃取的析相条件、石墨炉原子吸收工作参数及共存离子的干扰,优化了体系萃取条件。实验结果表明：微珠析相微萃取既起到了分离富集的作用,在石墨炉升温程序中又起到了基体改进剂的作用;当萃取剂用量为0.2～1.5 mL时,使之与水完全互溶所需助溶剂体积约为水相体积的0.2～0.5倍;方法线性范围为0～10 μg·L-1,检出限为0.057 μg·L-1,相对标准偏差（RSD）为3.3%（c= 2.5 μg·L-1,n=11）;当萃取剂用量为1.5 mL、水相体积15 mL时,与直接溶液进样相比其灵敏度可提高10倍。所建立的方法用于地质标准参考物质AGV-2和G-2中Cr的测定,测定值与参考值具有较好的一致性。     

Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement

The strain impact on hole mobility in the GOI tri-gate pFETs is investigated by simulating the strained Ge with quantum confinement from band structure to electro-static distribution as well as the effective mobility. Lattice mismatch strain induced by HfO2 warps and reshapes the valence subbands, and reduces the hole effective masses. The maximum value of hole density is observed near the top comers of the channel. The hole density is decreased by the lattice mismatch strain. The phonon scattering rate is degraded by strain, which results in higher hole mobility.     

自旋为1的三粒子Heisenberg XXX链中杂质对热纠缠的影响

采用纠缠的度量方法Negativity研究了匀强磁场下自旋为l的含杂质三粒子HeisellhergXXX链的热纠缠特性.通过计算系统的杂质位与其余部分间的两体纠缠N1-23及正常位与其余部分间的两体纠缠N12-3,发现纠缠存在的临界温度T.的改变来自杂质参数J1的变化,随杂质参数J1,的增加而增加,外界磁场B的存在会降低纠缠值,但并不会改变临界温度.可以通过调节杂质参数J1和外界磁场B来控制两体纠缠N1-23,和N12-3的大小.     

具有Manning-Rosen标量势与矢量势的Klein-Gordon方程的任意l波束缚态近似解析解

在球坐标系中研究了具有离心项的Manning-Rosen型标量势与矢量势的Klein-Gordon方程.在标量势等于矢量势的条件下,运用合适的指数近似将具有离心项的径向Klein-Gordon方程转化成超几何微分方程,从而获得了系统的任意l波Klein-Gordon方程解析束缚态径向波函数.最后,对l=0和α=0或1两种特殊情况进行了简单讨论.     

Power dependence of Brillouin linewidths in a silica fiber

We report the dependence of Brillouin linewidths on the pump power below the threshold of Brillouin lasing in a silica fiber. The Stokes Brillouin shift in a silica fiber is nearly unchanged, and its linewidth decreases with increasing pump power. However, the anti-Stokes Brillouin shift becomes smaller and its linewidth larger with increasing pump power. We explain these experimental results by the distributed fluctuating source model.     

Non-thermal plasma generation by using back corona discharge on catalyst

This paper discusses a novel plasma catalysis generation method based on back-corona discharge along porous catalyst bed reactor. The reactor consists of a high-voltage needle electrode, one floated mesh electrode, one catalyst bed and one grounded mesh electrode. Typical plasma current density is 11.88 μA/cm². It can be used for ozone generation and volatile organic compounds decomposition. By using a home-made AgMnOx/Al₂O₃-1 catalyst, 90% of toluene is removed at the specific plasma energy density of 123 J/L. At the same time, aerosol byproducts are collected and then decomposed on the catalyst bed. Moreover, the catalyst is regenerated because of the back-corona discharge.     

The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

Hydrogenated amorphous and microcrystalline silicon films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at low substrate temperatures using H₂-diluted SiH₄ as a source gas. High-density plasma generated by inductively coupled excitation facilitates the crystallization of silicon films at low temperatures, and microcrystalline silicon films were obtained at the substrate temperature as low as 180 °C. The columnar structure of the films becomes more and more compact with an increase of their crystallinity. The reduction of hydrogen content in the films causes a narrowing of the optical bandgap and an enhancement of the absorption with increasing the substrate temperature. The microcrystalline silicon films show two electronic transport mechanisms: one is related to the density of state distribution in the temperature region near room temperature and the other is the variable range hopping between localized electronic states close to the Fermi level below 170 K. A reasonable explanation is presented for the dependence of the optoelectronic properties on the microstructure of the silicon films. The films prepared at a substrate temperature of 300 °C have highly crystalline and compact columnar structure, high optical absorption coefficient and electrical conductivity, and a low hydrogen content of 3.8%.