Eu3+-site occupation in CaTiO3 perovskite material at low temperature

In order to clarify the site occupancy of rare-earth ions in rare-earth doped perovskite materials, the un-doped pure CaTiO₃ and Eu³⁺-doped CaTiO₃ samples with a series of Ca/Ti ratio were synthesized via high-temperature solid-state reaction method. X-ray diffraction (XRD) powder patterns confirm that the crystal structure keeps invariant at various Ca/Ti ratios. Measurement results of unit-cell parameters and X-ray photoelectron spectroscopy (XPS) indicate that Eu³⁺ ions enter into the Ca²⁺ site. The high-resolution photoluminescence spectra of Eu³⁺ ions at 20 K in all samples did not witness a significant change under the excitation at different wavelength, implying that Eu³⁺ ions occupy only one type of site. Considering the small spectral splitting range of ⁵D₀ → ⁷F₂ transition and the large intensity ratio of ⁵D₀ → ⁷F₂/⁵D₀ → ⁷F₁, it can be concluded that Eu³⁺ occupies Ca²⁺ site with larger coordinate numbers rather than Ti⁴⁺ site.     

Removal of oxygen from silicon by electron beam melting

Small amounts of multicrystalline silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the oxygen evaporation behavior during the electron beam melting (EBM) process. The oxygen content level before and after EBM was determined by secondary ion mass spectroscopy. The oxygen content was reduced from 6.177 to 1.629 ppmw when silicon was melted completely at 15 kW with removal efficiency up to 73.6 %. After that, it decreased continually to <0.0517 ppmw when the refining time exceeded 600 s with a removal efficiency of more than 99.08 %. During the melting process, the evaporation rate of silicon is 1.10 × 10^?5 kg/s. The loss of silicon could be reduced up to 1.7 % during oxygen removal process to a desirable figure, indicating EBM is an effective method to remove oxygen from silicon and decrease the loss of silicon.     

Nonclassicality and Decoherence of the Variable Arcsine State in a Thermal Environment

A kind of non-Gaussian state—variable arcsine state is studied by using the input-output theories which relate the statistical properties of the output field to those of the input field. The variable arcsine state (VAS) is generated by using a variable beam splitter (BS), which means that the transmissivity (reflectivity) of the BS is adjustable continuously. The nonclassicality is investigated by studying the negativity of Wigner function (WF). It is shown that the variable arcsine state has negative values of WF when transmissivity is not equal to 1 or 0. The decoherence effect of the VAS is then studied by analytically deriving the time evolution formula of WF.     

Complex object 3D measurement based on phase-shifting and a neural network

An accurate phase-height mapping algorithm based on phase-shifting and a neural network is proposed to improve the performance of the structured light system with digital fringe projection. As phase-height mapping is nonlinear, it is difficult to find the best camera model for the system. In order to achieve high accuracy, a trained three-layer back propagation neural network is employed to obtain the complicated transformation. The phase error caused by the non-sinusoidal attribute of the fringe image is analyzed. During the phase calculation process, a pre-calibrated phase error look-up-table is used to reduce the phase error. The detailed procedures of the sample data collection are described. By training the network, the relationship between the image coordinates and the 3D coordinates of the object can be obtained. Experimental results demonstrate that the proposed method is not sensitive to the non-sinusoidal attribute of the fringe image and it can recover complex free-form objects with high accuracy.     

Influence of the illumination on the subband structure and?occupation in AlxGa1?xN/GaN heterostructures

The subband structure and occupation in the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov–de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.     

由单负材料组成的一维对称型光子晶体中的隧穿模

由电单负材料A和磁单负材料B构成了一维对称型光子晶体,数值计算表明其带隙中出现了一隧穿模. 材料层数增加,隧穿模宽度急剧变窄,而其位置不变.隧穿模的位置和宽度对入射角的变化都不太敏感. 材料的几何厚度减小,隧穿模的位置蓝移,而其宽度不变. μ_A, ε_B增加,隧穿模的位置红移,宽度减小. 利用隧穿模的以上特性可以实现对电磁波传播的动态调控.     

混合工质扩散吸收制冷系统初步实验研究

本文研究了一种混合工质扩散吸收制冷循环,在带溶液泵的循环实验装置上,以R23/R32/R134a为混合制冷剂,He为扩散气体,DMF(二甲基甲酰胺)为吸收剂,进行了实验研究。结果表明,高压侧混合制冷剂在回热器中进一步被低压侧混合制冷剂冷却,使其在更低的温度下液化并与He扩散蒸发,可以实现较低的蒸发温度。中间沸点组分R32可以改善系统的制冷性能,有利于较低蒸发温度的实现。本文提出的水平蛇形套管换热器用作扩散吸收系统回热器是可行的,但还需进一步改进回热器的结构,提高加工工艺和安装精度。     

卷绕式螺旋形薄膜介质脉冲形成线设计

采用模块化结构,设计了一种卷绕式螺旋形薄膜介质脉冲形成线,并且对绝缘材料、电极材料的选择依据进行了分析。基于模块化卷绕式脉冲形成线,研制的重复频率脉冲方波产生器采用4个开关同步触发四级形成线模块,从而实现多模块的电压串联叠加,以达到产生高压的目的。开关采用气体火花间隙开关,每级开关及充放电采用电感隔离。研制的脉冲产生器输出电压220 kV,脉冲宽度182 ns,前沿50 ns,可10 Hz重复频率稳定运行。     

利用自电离探测技术研究Sm原子Rydberg态光谱

采用孤立实激发与自电离探测技术相结合的方法对Sm原子偶宇称高激发态进行了系统研究.按照不同的自电离通道将所测数据进行了分类和比较,并进行了详细讨论.不仅报道了许多收敛于不同电离限的Rydberg态的能级位置和跃迁的相对强度等信息,而且还把处于同一能域内的Rydberg态和价态进行了辨识.另外,不但提供了一种有效识别不同类型的高激发态的鉴别技术,而且还对处于41800 cm^-1到43800 cm^-1能域内的Rydberg态和价态的光谱特性进行了详细分析和讨论. 关键词： 自电离探测 Rydberg态 Sm原子     

基于Geant 4的介质深层充电电场计算

基于Geant4模拟了电子在Teflon介质中的电荷输运过程,获得了其内部的电流密度、剂量率和电荷沉积量沿深度的分布曲线,进而利用电荷连续性方程、泊松方程和深层俘获方程求解出Teflon中高能量、小束流电子辐照下的电场分布. 将介质平板充电过程简化为屏蔽铝板与分层介质组成的Geant4模型,电子源为1.0MeV,0.1pA/cm²的平面源. 通过记录经过各层介质的电子电量和各层介质内沉积能量和电子数目,用统计平均的方法获得了介质内电流密度、剂量率和电荷沉积量沿深度的分布规律. 介质内 关键词： 卫星 介质深层充电 Geant4 电场