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101.
In this paper, some sufficient conditions for the oscillation for solutions to systems of n-th order partial functional differential equations are obtained.  相似文献   
102.
This paper considers the scalar differential delay equation x(t) = -μx(t)-f(x(t-Τ(t)), t). By using the mapping method we obtain that the solutionswill be ultimately in some interval.  相似文献   
103.
The kinetics of C6H5 reactions with n‐CnH2n+2 (n = 3, 4, 6, 8) have been studied by the pulsed laser photolysis/mass spectrometric method using C6H5COCH3 as the phenyl precursor at temperatures between 494 and 1051 K. The rate constants were determined by kinetic modeling of the absolute yields of C6H6 at each temperature. Another major product C6H5CH3 formed by the recombination of C6H5 and CH3 could also be quantitatively modeled using the known rate constant for the reaction. A weighted least‐squares analysis of the four sets of data gave k (C3H8) = (1.96 ± 0.15) × 1011 exp[?(1938 ± 56)/T], and k (n‐C4H10) = (2.65 ± 0.23) × 1011 exp[?(1950 ± 55)/T] k (n‐C6H14) = (4.56 ± 0.21) × 1011 exp[?(1735 ± 55)/T], and k (n?C8H18) = (4.31 ± 0.39) × 1011 exp[?(1415 ± 65)T] cm3 mol?1 s?1 for the temperature range studied. For the butane and hexane reactions, we have also applied the CRDS technique to extend our temperature range down to 297 K; the results obtained by the decay of C6H5 with CRDS agree fully with those determined by absolute product yield measurements with PLP/MS. Weighted least‐squares analyses of these two sets of data gave rise to k (n?C4H10) = (2.70 ± 0.15) × 1011 exp[?(1880 ± 127)/T] and k (n?C6H14) = (4.81 ± 0.30) × 1011 exp[?(1780 ± 133)/T] cm3 mol?1 s?1 for the temperature range 297‐‐1046 K. From the absolute rate constants for the two larger molecular reactions (C6H5 + n‐C6H14 and n‐C8H18), we derived the rate constant for H‐abstraction from a secondary C? H bond, ks?CH = (4.19 ± 0.24) × 1010 exp[?(1770 ± 48)/T] cm3 mol?1 s?1. © 2003 Wiley Periodicals, Inc. Int J Chem Kinet 36: 49–56, 2004  相似文献   
104.
105.
Weperformedthehigh-pressureRaman measurementofthethreenanosizedZnOcrystals. Wefoundthesmallerthesize,thehigherthe pressuretoinducethephasetransitionfrom w櫣rzitetorock-saltstructure. High-pressureRamanmeasurementsof nona-shapedZnOcrystalswerepreformed.The…  相似文献   
106.
A series of new liquid crystalline homopolymers, copolymers, and block copolymers were polymerized from styrene‐macroinitiator ( SMi ) and methacrylates with pendent 4,4′‐bis(biphenyl)fluorene ( M1 ) and biphenyl‐4‐ylfluorene ( M2 ) groups through atom transfer radical polymerization (ATRP). The number‐average molecular weights (Mn) of polymers P1 ‐ P4 were 10,007, 14,852, 6,275, and 10,463 g mol?1 with polydispersity indices values of 1.21, 1.15, 1.31, and 1.22, respectively. All polymers exhibit the nematic phase. The thermal, mesogenic, and photoluminescent properties of all polymers were investigated. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 4564–4572, 2007  相似文献   
107.
The present study is concerned with the determination of the optimal shape for a package containing multiple heating elements. The optimization tool has been developed based on the inverse heat transfer (IHT) approach, incorporating a direct problem solver, a numerical grid generator, a direct-differentiation sensitivity analyzer, and the conjugate gradient method. Shape design that leads to a specified outer surface temperature distribution is predicted by the approach. In this study, the effects of internal heat generation on optimal shapes of the packagings have also been evaluated. Several practical cases with various imbedded heating elements and thermal conditions are studied. Results show that the approach provides an efficient computer-aided design scheme for the shape profile determination.  相似文献   
108.
颗粒物质的两个典型效应及其研究现状的分析   总被引:6,自引:0,他引:6  
肖文波  胡林 《物理实验》2004,24(3):44-46
概述了颗粒物质领域中粮仓现象和巴西坚果效应两个典型现象及其解释理论,分析其理论的成功和不足之处,并给出了一些看法。  相似文献   
109.
110.
We report on electron g-factor in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.  相似文献   
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