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61.
采用电路分析和解析建模方法研究了CMOS电路中甄别总剂量效应最劣辐照与测试偏置的问题。通过引入小规模模拟电路和数字电路的例子进行具体分析,获取了不同电路的最劣偏置情况。对于数字电路,引入了敏感因子的概念用于定量计算不同辐照与测试偏置组合下电路的总剂量效应敏感程度。利用实测数据或电路仿真结果对甄别结果进行了一一验证,得到相一致的结论,证明了该研究思路的正确性。  相似文献   
62.
单方环结构左手材料微带天线   总被引:4,自引:0,他引:4       下载免费PDF全文
郭林燕  杨河林  李敏华  高超嵩  田原 《物理学报》2012,61(1):14102-014102
设计了一种简单的双面单方环结构左手材料,在4.8–5.25 GHz频率范围内该材料的等效介电常数和等效磁导率同时为负.将此单方环左手材料作为覆盖层,置于中心工作频率为5.0 GHz的微带天线之上. 仿真和实验研究表明:相对普通微带天线而言,覆层微带天线的性能得到了明显改善, E面和H面的半功率波束宽度分别收缩了25°和20°,定向性得到了提高, 5 GHz处的增益提高了3 dB, -10 dB带宽增加了600 MHz. 关键词: 单方环结构 左手材料 微带天线  相似文献   
63.
A new type of bismuth silicate glass (Bi2O3-SiO2-ZnO-Al2O3-La2O3) doped with Tm2O3 is prepared by melt-quenching method. The thermal stability of the glass is examined by differential scanning calorimetry. No crystallization peak is found. Using the absorption and emission spectra, the absorption and emission cross-sections are calculated. Their maximum data are 2.9×10-21cm2 at 1663 nm and 4.7×10-21cm2 at 1826 nm, respectively. Using the Judd-Ofelt theory, the radiation transition probabilities and radiative lifetimes are obtained. The extended overlap integral method is applied to analyze energy transfer process among the Tm3+ ions. The transfer constants of cross-relaxation and energy migration among the Tm3+ ions at the 3H4 level are 7.60×10-40 and 14.98×10-40 cm6 /s, respectively. The critical transfer radius for cross-relaxation is 0.99 nm. The cross relaxation process is easy to realize and is favorable for obtaining ~2-μm laser.  相似文献   
64.
Liu J  Tian X  Zhou Z  Wu K  Han W  Zhang H 《Optics letters》2012,37(12):2388-2390
Efficient laser operation is demonstrated at room temperature with a new Yb:Lu3Ga5O12 garnet crystal. A continuous-wave output power of 5.36 W is generated at a center oscillation wavelength of 1041 nm, with an optical-to-optical efficiency of 51% and the slope efficiency of 63%. In passively Q-switched operation, the maximum average output power reaches 4.0 W (center wavelength of 1034 nm) at a repetition rate of 71 kHz, with optical-to-optical and slope efficiencies measured to be 40% and 50%, respectively. Laser pulses of 26 ns duration are generated with a pulse energy of 91 μJ and peak power of 3.5 kW.  相似文献   
65.
对光纤中简并四波混频(DFWM)耦合波方程进行数值求解,通过分析发现:泵浦光功率的增大会导致泵浦光与反斯托克斯光之间能量交换周期减小。阐述了优化光纤中DFWM实现全光信号幅度整形的机理。在此基础上设计了一个优化的全光信号幅度整形系统,并进行了系统仿真,结果表明:通过再生系统后,信号的消光比从9.46 dB提升到30.40 dB,品质因子从15.95提升到了180.40。  相似文献   
66.
Bright optical soliton propagation properties near the left band edge of photonic crystal waveguide (PCW) are numerically investigated. Compared with the normal PCW with air background, by employing polystyrene as PCW background and adjusting the structure parameters simultaneously, the required soliton peak power sharply decreases from 8.63 × 106 W/m to 9.98 × 102 W/m. The influence of optical loss on soliton propagation is numerically investigated. The dynamic modulation of the soliton propagation in PCW is realized, and a modulation range of 459 nm wavelength for the soliton transmission has been achieved. Simulation results show that the transmission wavelength, required soliton peak power and delay time decrease almost linearly as the external modulated voltage increases; the modulation sensitivities are 8.316 nm/V, 3.416 W/m/V and 16.6 ps/V, respectively.  相似文献   
67.
A 1×2 power-splitter with parallel output that exhibits high-bandwidth and low-loss splitting for TE-polarized light is designed based on a photonic crystal slab in a silicon-on-insulator (SOI) material. The high performance is achieved by the integration of a Y-junction and 60° waveguide bends, which is designed to ensure single-mode operation, and keep the output channels of the power-splitter be parallel to the input channel. With a three-dimensional finite-difference time-domain (3D-FDTD) technique, ultralow-loss output of the optimized power-splitter with normalized transmission above 45% (in the range 3.216±0.18 dB) is obtained in the high-bandwidth range 1472–1634 nm, which covers the entire C-band of optical communication. In addition, the simulation results demonstrate that when the manufacture error of the lattice shift (dx) is in the range of ±10 nm, the disturbance of the transmission and the bandwidth are 1.52% and 6.79%, respectively. Both the specific result and the general idea of integration design are promising in the optical integrated circuit (OIC) and integrated optical devices in the future.  相似文献   
68.
Micro-sized NaY(MoO4)2:Tb3+ phosphors with dendritic morphology was synthesized by a ionic liquid-assisted hydrothermal process. X-ray diffraction (XRD) indicated that the as-prepared product is pure tetragonal phase of NaY(MoO4)2. Field emission scanning electron microscopy (FE-SEM) images showed that the as-prepared NaY(MoO4)2:Tb3+ phosphors have dendritic morphology. The photoluminescent (PL) spectra displayed that the as-prepared NaY(MoO4)2:Tb3+ phosphors show a stronger green emission with main emission wavelength 545 nm corresponding to the 5D47F5 transition of Tb3+ ion, and the optimal Tb3+ doping concentration for obtaining maximum emission intensity was confirmed to be 10 mol%. Based on Van Uitert's and Dexter's models the electric dipole–dipole (D–D) interaction was confirmed to be responsible for the concentration quenching of 5D4 fluorescence of Tb3+ in the NaY(MoO4)2:Tb3+ phosphors. The intrinsic radiative transition lifetime of 5D4 level is found to be 0.703 ms.  相似文献   
69.
High-quality alloyed near-infrared CdTexSe1?x quantum dots were synthesized by a modified organometallic method. The emission wavelength of the alloyed quantum dots were turned from visible to near-infrared range by changing the composition of the precursor. The photoluminescence intensity of the alloyed quantum dots was further enhanced by coupling through localized surface plasmons from Au nanoparticles. The alloyed CdTeSe quantum dots coupled with Au nanoparticles exhibited a 4 times photoluminescence enhancement than that of bare CdTeSe quantum dots by turning the localized surface plasmons resonant absorption of Au nanoparticles consistent to the excitation wavelength. This method will be beneficial for the potential applications in the biological imaging and detection.  相似文献   
70.
Ammonium alum crystals are colored electrolytically using a pointed cathode and a flat anode at low temperatures and under various voltages. SO3?, SO2? and O3? hole-trapped centers are produced in colored ammonium alum crystals. Characteristic absorption bands of SO3?, SO2? and O3? hole-trapped centers are observed in absorption spectra of colored ammonium alum crystals. Production and conversion of hole-trapped centers are explained. Current–time curves for electrolytic coloration of ammonium alum crystal and their relationship with electrolytic coloration process are given.  相似文献   
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