Xanthan gum-gelatin complexes

Gelatin (G) and xanthan gum (X) formed complexes either on bringing their blends to pH 2.3 or carrying out the electrode process in aqueous blends of X and G at pHs from 9 to 11. X carboxylic groups and G peptide moieties were involved in the interactions between the partners. Also non-coulombic interactions with involvement of NH and OH groups, as well as hydrophobic interactions were involved, as proved by FTIR and thermal analyses, respectively. The reaction yield declined with increase of concentration of G in the blends. Simultaneously, the thermal stability of the complexes slightly increased with increase in G content in the blend. The latter increased with its concentration in the reaction mixture. Slow formation by electrosynthesis provided more an organised matrix.     

The damage of the optical components induced by the stimulated Brillouin scattering

A theory of excitation of ultrasonic waves in the stimulated Brillouin scattering (SBS) process is presented in this paper. By using several reasonable approximations, a numerical calculation of the transient longitudinal SBS shows that large amplitude of acoustic waves can be built up by the nanosecond pulse of high-power laser, which may result in the damage of optical glasses. The maximal density change and the maximal acoustic wave intensity in optical glasses of 5\,cm in thickness are calculated by using different parameters of the high-energy laser, such as the intensity, the pulse width, and the wave length. The damage threshold of the optical glasses is about 80 GW/cm^{2} when using a 1064 nm laser. The dynamic mechanism of SBS is the electrostriction effect of the components coupling with the high-power laser.     

Synthesis and characterization of open-framework niobium silicates: Rb2(Nb2O4)(Si2O6).H2O and the dehydrated phase Rb2(Nb2O4)(Si2O6)

A new niobium(V) silicate, Rb(2)(Nb(2)O(4))(Si(2)O(6)).H(2)O, has been synthesized by a high-temperature, high-pressure hydrothermal method and characterized by single-crystal X-ray diffraction, thermogravimetric analysis, and solid-state NMR spectroscopy. It crystallizes in the tetragonal space group P4(3)22 (No. 95) with a = 7.3431(2) A, c = 38.911(3) A, and Z = 8. Its structure contains tetrameric units of the composition Nb(4)O(18), which share corners to form a layer of niobium oxide. The Nb-O layer is a slice of the pyrochlore structure. Neighboring Nb-O layers are linked by vierer single-ring silicates generating eight-ring and six-ring channels running parallel to <100> directions, in which the Rb(+) cations and water molecules reside. The tantalum analogue was prepared and characterized by powder X-ray diffraction. Upon heating to 500 degrees C, Rb(2)(Nb(2)O(4))(Si(2)O(6)).H(2)O loses lattice water molecules, while the framework structure is retained to give the anhydrous compound Rb(2)(Nb(2)O(4))(Si(2)O(6)), whose structure was also characterized by single-crystal X-ray diffraction. The dehydrated sample absorbs water reversibly, as indicated by powder X-ray diffraction. Rb(2)(Nb(2)O(4))(Si(2)O(6)) crystallizes in the tetragonal space group I4(1) (No. 80) with a = 10.2395(6) A, c = 38.832(3) A, and Z = 16.     

Cs4UGe8O20: a tetravalent uranium germanate containing four- and five-coordinate germanium

A very rare tetravalent uranium germanate has been synthesized under hydrothermal conditions at 585 °C and 160 MPa. Its structure contains layers of single-ring Ge(3)O(9)(6-) germanate anions that are connected by UO(6) octahedra and dimers of edge-sharing GeO(5) trigonal bipyramids to form a three-dimensional framework with intersecting 6- and 7-ring channels. UV-visible, photoluminescence, and U 4f X-ray photoelectron spectroscopy were used to confirm the valence state of uranium.     

Time-dependent degradation of threshold voltage in AIGaN/GaN high electron mobility transistorsTime-dependent degradation of threshold voltage in AIGaN/GaN high electron mobility transistors

This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in A1GaN/GaN high electron mobility transistors （HEMTs） submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.     

Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated,and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs).Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs,the series resistance under the Schottky contacts (RS) was calculated using the method of power consumption,which has been proved to be valid.Finally,the method of power consumption for calculating R S was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs.It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs.     

Asymptotic normality of cumulant spectral estimates

The paper considers higher-order cumulant spectral estimates obtained by directly Fourier transforming weighted cumulant estimates. Such estimates computationally are different from those based on the finite Fourier transform. These estimates can be looked at continuously as well as directly on submanifolds. The estimates of cumulants are based on unbiased moment estimates. Asymptotic normality is obtained for these estimates and is based on a strong mixing condition and only a finite number of cumulant summability conditions.     

A theoretical approach for accurate predictions of the enthalpies of formation of carotenes

A computational approach has been designed for accurately determining enthalpies of formation (ΔH(f)) for the carotene species. This approach, named correlation corrected atomization (CCAZ), is based on the concept of bond and group additivity, and is applied along with density functional theory (DFT). Corrections to the deficiencies in DFT were divided into 1,2-, 1,3-, and 1,4- atomic interactions, which were determined by comparisons with the G3 data of the training set. When comparing predictions from CCAZ combined with two different DFT methods (B3LYP and MPWB1K), fairly accurate prediction is expected. In contrast, DFT using the atomization and isodesmic schemes resulted in poor predictions of ΔH(f). The equivalent methods, atomic equivalent (AEQ) and group equivalent (GEQ) provide improved predictions; however, the accuracies are lower than that of CCAZ.     

Ionothermal synthesis of metal oxalatophosphonates with a three-dimensional framework structure: Na2M3(C2O4)3(CH3PO3H)2 (M = FeII and MnII)

Two isostructural transition-metal oxalatophosphonates, Na2M3(C2O4)3(CH3PO3H)2 (M = Fe(II) and Mn(II)), have been synthesized by using a low-melting-point eutectic mixture of choline chloride and malonic acid as a solvent and characterized by single-crystal X-ray diffraction and 57Fe M?ssbauer spectroscopy. The 3D framework structure consists of a corner-sharing octahedral trimer that is linked with other trimers through two distinct oxalate ligands with unusual linkage types, phosphonate tetrahedra, and H bonds to form infinite channels along the [101] direction where the Na+ cations are located. They are the first examples for the use of an ionic liquid as a solvent in the synthesis of metal oxalatophosphonates. Crystal data for the Fe compound follow: monoclinic, P2(1)/n (No. 14), a = 5.8063(1) A, b = 10.3867(3) A, c = 14.8094(4) A, beta = 96.926(1) degrees , and Z = 2. Crystal data for the Mn compound are the same as those for the Fe compound except a = 5.8734(9) A, b = 10.557(2) A, c = 14.863(2) A, and beta = 96.691(2) degrees .