SIMULATION OF OCCUPATION FUNCTION FOR THERMALLY STIMULATED CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS

The occupation functions for the general condition f(E,T), for the high field approx-imation (HTSC) f_H(E,T) and for the steady state photoconductivity (SSPC) f_P(E,T) in the thermally stimulated conductivity (TSC) of amorphous semiconductors have been inves-tigated. It was found that the occupation function f(E,T) in TSC is in excellent agreement with the occupation function in SSPC f_P(E,T) under the condition of σ_TSC(T) = σ_P(T).There is a large difference between f_P(E,T) and f_H(E,T), which can be much reduced by introducing an effective attempt to escape frequency ν_eff in the calculation of f_H (E, T). The results show that the mobility-lifetime product (μτ) in TSC obtained from SSPC measure-ments under the above condition is valid. For high field approximation TSC, the simulated ν_eff is found to be temperature dependent.     

A DOUBLE-TEMPERATURE-GRADIENT TECHNIQUE FOR THE GROWTH OF PURE C60 SINGLE CRYSTALS FROM THE VAPOR PHASE

Pure C₆₀ single crystals were grown by a sublimation-condensation method in an evacuated dosed quartz tube situated in a double-temperature-gradient furnace. Large C₆₀ single crystals, up to a size of 0.6 mm×1.0 mm×2.0 mm with quite smooth and shiny faces, were obtained. X-ray diffraction, electron diffraction and X-ray morphology were carried out and showed that the quality of large C₆₀ single crystals grown by the double-temperature-gradient technique is excellent. In this paper the experimental results of the growth of large C₆₀ single crystals are reported and the morphological and structural characterizations are discussed in detail.     

SYSTEMATIC STUDY OF POLARIZATION OF TWO-PHOTON ABSORPTION IN SYMMETRY ASSIGNMENTS

In this paper, we have systematically analyzed the degenerate and nondegenerate two-photon polarization ratios of various point groups. We present the maximum of symmetry assignments of two-photon transition with the combination of degenerate and nondegenerate two-photon absorption. These results provide the theoretical basis for the experimental assignments.     

多层溅射制备Wsix/Si薄膜的电阻率特性研究

利用多层溅射技术制备了ＷＳｉ_x／Ｓｉ薄膜，然后测量其平面电阻的退火行为，发现平面电阻在６００－７００℃之间退火后有陡降，这对应于非晶ＷＳｉ_x薄膜中Ｗ₅Ｓｉ₃四角相的形成。ｘ射线衍射和慢正电子湮没测量也证实了这一点。认为薄膜电阻率的突变反映了导电机制的变化，它和薄膜结构的变化有很好的对应关系。 关键词：     

Cs原子里德伯态Stark能级场电离阈值与｜ml｜关系的测定

报道Ｃｓ原子里德伯态Ｓｔａｒｋ能级场电离阈值与｜ｍ_l｜依赖关系的实验研究结果，从实验上同时测得Ｃｓ原子｜ｍ_l｜＝０，１，２三种态的电离阈值表达式。 关键词：     

高温高压下SrB4O7：Eu2+玻璃的晶化

 利用X射线衍射和Eu²⁺发射光谱方法研究了非晶玻璃SrB₄O₇在高温高压下的晶化。结果表明：在5.0 GPa压力下，200 ℃仍为玻璃态，只有几个强度极低的小峰，表明有晶化的迹象；600 ℃时已基本晶化，但为SrB₄O₇正交相与SrB₄O₇高压立方相二相共存；当温度提高到1 000 ℃时，晶化成了近单相的与常压SrB₄O₇粉末晶体相同的正交结构。伴随晶化度的加强，Eu²⁺发射强度增强，与Ｘ射线衍射结果相一致。     

二甲亚砜硝酸钇的晶体结构

二甲亚砜硝酸钇Y(NO₃)₃·3DMSO晶体属单斜晶系,a=13.604(4)?,b=12.669(4)?, c=11.554(2)?, β=100.14(4)°,z=4。空间群为P2₁/n。用PW-1100四圆衍射仪收集强度数据,独立衍射点数为3615个。结构已用重原子法解出,用全矩阵和方块对角矩阵最小二乘方法修正结构参数,最后R因子为0.080。结构分析结果表明,围绕着钇离子的九个氧构成稍歪扭的“三帽三方棱柱”配位多面体。钇和配位氧之间 关键词：     

相干光在嵌有随机粉粒和麻坑的表面上的主反射场

运用“随机随机游动”模型导出了相干光波射在嵌有随机粉粒和麻坑的表面(表面本身也有随机起伏)上时,其主反射场的期望值的表达式,并以正态分布为例作了计算。 关键词：     

四川白云母薄膜的结构特性

本文介绍了使用透射式电子显微镜和扫描电子显微镜研究厚度约为300—1000?的四川甲级白云母薄膜的结构和成分组成,结论是这种白云母薄膜具有相当完善的单晶结构特性,没有检测到存在什么杂质,但在某些区域存在图2—4所表明的缺陷。云母薄膜可以作为基底材料,在其上沉积或生长具有较大晶粒的其他薄膜。 关键词：     

RIEMANNIAN STRUCTURE ON GAUGE GROUP AND METRIC COMPATIBLE YANG-MILLS THEORY

A gauge theory with gauge potentials that are compatible with right invariant metric of the gauge group is presented. It is shown that in the metric compatible torsion free gauge theory, gauge potentials can acquire the mass, without introducing the tliggs field. A plane-wave exact solution in vacuum is obtained.