Weak decays of heavy baryons in the light-front approach

In this work, we analyse semi-leptonic and non-leptonic weak decays of the heavy baryons: Λ_b,Ξ_b,?_b and Λ_c,Ξ_c,?_c. For non-leptonic decay modes, we study only the factorizable channels induced by the external Wemission. The two spectator quarks in the baryonic transitions are treated as a diquark and form factors are calculated in the light-front approach. Using the results for form factors, we also calculate some corresponding semi-leptonic and non-leptonic decay widths. We find that our results are comparable with the available experimental data and other theoretical predictions. Decay branching fractions for many channels are found to reach the level 10~(-3)~10~(-2),which is promising for discovery in future measurements at BESIII, LHCb and Belle II. The SU(3) symmetry in semi-leptonic decays is examined and sources of symmetry breaking are discussed.     

Enhanced energy storage and pyroelectric properties of highly (100)-oriented (Pb1−x−yLaxCay)Ti1−x/4O3 thin films derived at low temperature

Highly (100)-oriented (Pb_1?x?yLa_xCa_y)Ti_1?x/4O₃ ($x=0.15$, $y=0.05$; $x=0.1$, $y=0.1$; $x=0.05$, $y=0.15$) thin films were deposited on Pt/Ti/SiO₂/Si substrates at a low temperature of 450?°C via a sol–gel route. It was found that all the (Pb_1?x?yLa_xCa_y)Ti_1?x/4O₃ thin films could be completely crystallized and the content of La/Ca showed a significant effect on the electrical properties of films. Among the three films, the (Pb_1?x?yLa_xCa_y)Ti_1?x/4O₃ ($x=0.1$, $y=0.1$) thin film exhibited the enhanced overall electrical properties, such as a low dielectric loss ($\tan ?\delta <0.08$) and leakage current ($J～4.6\times {10}^{?5}$ A/cm²), a high recoverable energy density (W_re ～ 15 J/cm³), as well as a large pyroelectric coefficient (p ～ 190 μC/m²K) and figure of merit ($F_{\mathrm{d}}^{\prime }～77\mathrm{\mu }\text{C}/{\text{m}}^2$K). The findings suggest that the fabricated thin films with a good (100) orientation can be an attractive candidate for applications in Si-based energy storage and pyroelectric devices.     

Spin-gapped phases in the frustrated Hubbard chain with transverse spin anisotropy

At weak coupling, we investigate the frustrated Hubbard chain including nearest-neighbor and next-nearest-neighbor antiferromagnetic exchange with easy-plane anisotropy $J_1^{xy}$ and $J_2^{xy}$. At half filling, we obtain three different phases in the $J_1^{xy}$–${J_2}^{xy}$ plane: a transverse spin density wave phase, a bond order wave phase and a Luther–Emery metallic phase characterized by the coexistence of singlet superconductivity and charge density wave correlations. The frustrating exchange $J_2^{xy}$ accounts for the spin-gapped phases.     

里德伯原子向超冷等离子体的自发转化

在铯原子MOT中,利用三光子激发冷原子获得超冷里德伯原子,改变里德伯原子间的相互作用时间,获得超冷等离子体的信号.研究了里德伯原子向超冷等离子体的自发转化过程和里德伯原子的初始电离机理. 关键词： 里德伯原子 相互作用 等离子体 电离机理     

紫外单光子成像系统的研究

搭建了紫外单光子成像系统,详细介绍了该系统的组成、工作原理和分辨率性能测试.由汞灯发出的紫外光经过大气散射、多块减光片得到了紫外单光子流.单光子直接打在微通道板上,微通道板产生的倍增电子由楔条形阳极收集,电荷灵敏前置放大器将阳极输出的电荷信号转变为电压信号,主放大器对前放信号进行滤波整形.利用高速数据采集卡连续采集主放大器的输出波形,通过软件对采集波形进行处理,采用图像处理技术得到了紫外单光子10min的计数图像,并对图像进行了畸变校正.此外,通过自己设计的分辨率板,测得该系统的分辨率可达150μm.该系统在极微弱光探测成像,生物发光,空间环境探测等方面具有广泛应用. 关键词： 单光子计数成像 阳极探测器 楔条形阳极 分辨率     

射频离子源束流特性分析

介绍了为HL-2A 装置设计的引出束功率为1MW 的射频离子源研制情况。目前,在测试平台上,该离子源已经成功引出了束能量和束电流分别为35keV 和12.4A、束质子比为79%、脉宽为100ms 的氢离子束,达到了其设计束功率的44%。用红外热成像的方法测量了离子束能量密度分布。结果表明,在距离引出系统地电极 1.3m 处,束密度分布遵循高斯分布。引出束的最佳导流系数为1.689×10^–6A•V^-3/2 左右,随射频功率改变有较小的变化。根据这些实验结果,采取了相关改进措施来改善离子源的引出束性能。     

Calculation of High Frequency Complex Permeability of Carbonyl Iron Flakes in a Nomagnetic Matrix

The carbonyl iron flakes are fabricated by high-energy ball milling. The effective permeability is measured and calculated for the composite consisting of flakes embedded in a nonmagnetic matrix. The magnetic flakes with a shape anisotropy and random spatial distribution of normal direction are considered to calculate the complex permeability of magnetic flake materials. Its analytical model is derived from the Landau-Lifshitz-Gilbert equation and Bruggeman ＇s effective medium theory. The calculated results agree well with the experiment.     

Local Unitary Invariants for Multipartite States

We study the invariants of arbitrary dimensional multipartite quantum states under local unitary transformations. For multipartite pure states, we give a set of invariants in terms of singular values of coefficient matrices. For multipartite mixed states, we propose a set of invariants in terms of the trace of coefficient matrices. For full rank mixed states with non-degenerate eigenvalues, this set of invariants is also the set of the necessary and sufficient conditions for the local unitary equivalence of such two states.     

Investigation on an ultra-compact 1\times 2 polymer electro-optic switch using cross-coupling 2N+1 vertical-turning serial-coupled microrings

Generic model and thorough investigation are proposed for a novel $1\times 2$ 1 × 2 polymer electro-optic (EO) switch based on one-group $2N+1$ 2 N + 1 vertical-turning serial-coupled microrings. For realizing boxlike flat spectrum as well as low crosstalk and insertion loss, resonance order and coupling gaps are optimized. The MRR switches with $N \ge 1$ N ≥ 1 reveal favorable boxlike spectrum as when compared with the simple device with only one microring ( $N = 0$ N = 0 ). For obtaining $<-30\,\text{ dB }$ < - 30 dB crosstalk under through-state, the dependency of switching voltage on $N$ N is determined as $7.19 \times \text{ exp }(-N/0.72) + 1.72\,(\text{ V })$ 7.19 × exp ( - N / 0.72 ) + 1.72 ( V ) . Under the operation voltages of 0 V (drop state) and the predicted switching voltages (through state), the device performances are analyzed, and $1 \le N \le 10$ 1 ≤ N ≤ 10 is required for dropping the insertion loss (drop state) below 10 dB. The crosstalk of the ten devices ( $N = 1-10$ N = 1 - 10 ) are $< -19.5\,\text{ dB }$ < - 19.5 dB under drop state and $< -28.7\,\text{ dB }$ < - 28.7 dB under through state, and the insertion losses of the devices ( $N = 1-10$ N = 1 - 10 ) are $< 9.715\,\text{ dB }$ < 9.715 dB under drop state and $< 1.573\,\text{ dB }$ < 1.573 dB under through state. The device also has ultra-compact footprint size of only 0.33–1.06 mm, which is only 1/10–1/3 of those of our previously reported polymer EO switches based on directional coupler or Mach–Zehnder interferometer structures. Therefore, the proposed device is capable of highly integration onto optical networks-on-chip.     

Theoretical and experimental study of single mode-locking pulse generation with low repetition rate in a dual-loss-modulated QML YVO4/Nd:YVO4 laser with EO and GaAs

Using electro-optic (EO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser at 1.06 μm is realized. The experimental results show that the number of the mode-locking pulses underneath the Q-switched envelope decreased with increasing pump power. With an output coupling of 6.5 %, the single mode-locking pulse underneath the Q-switched envelope with 1 kHz repetition rate was obtained when the pump power exceeded 4.65 W. At a pump power of 8.25 W for an output coupling of 10 %, a stable mode-locking pulse train at a repetition rate of 1 kHz was achieved with pulse energy as high as 582 μJ and pulse duration of about 580 ps, corresponding to a peak power of 1 MW. Using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled rate equations for diode-pumped doubly QML YVO₄/Nd:YVO₄ laser are given and the numerical solutions of the equations are basically in accordance with the experimental results.