The Potential Antidepressant Action of Duloxetine Co-Administered with the TAAR1 Receptor Agonist SEP-363856 in Mice

Here, we explored the possible interaction between duloxetine and SEP-363856 (SEP-856) in depression-related reactions. The results showed that oral administration of duloxetine showed powerful antidepressant-like effects in both the forced swimming test (FST) and the suspension tail test (TST). SEP-856 orally administered alone also exerted an antidepressant-like effect in FST and TST, especially at doses of 0.3, 1, and 10 mg/kg. In addition, duloxetine (15 mg/kg) and SEP-856 (15 mg/kg) both showed antidepressant-like effects in the sucrose preference test (SPT). Most importantly, in the above experiments, compared with duloxetine alone, the simultaneous use of duloxetine and SEP-856 caused a more significant antidepressant-like effect. It is worth noting that doses of drug combination in FST and TST did not change the motor activities of mice in the open-field test (OFT). Thus, duloxetine and SEP-856 seem to play a synergistic role in regulating depression-related behaviors and might be beneficial for refractory depression.     

Pressure dependence of the thermal stability in LiMn2O4

Structural stability in terms of the decomposition temperature in LiMn₂O₄ was systematically investigated by a series of high-temperature and high-pressure experiments.LiMn₂O₄ was found to have structural stability up to 5 GPa at room temperature.Under ambient pressure,the compound decomposed at 1300℃.The decomposition temperature decreased with increasing pressure,yielding more complex decomposed products.Below the decomposition temperature,the crystal structure of LiMn₂O₄ varied with pressure.The presented results in this study offer new insights into the thermal and pressure stability of LiMn₂O₄ materials as a cathode for lithium-ion batteries that can operate under extreme conditions.Therefore,these findings may serve as a useful guide for future work for improving lithium-ion batteries.     

AlmNin (m+n=2–4)二元合金团簇结构和稳定性的密度泛函研究

在密度泛函理论的B3PW91水平上, 优化计算了AlmNin (m+n=2–4)团簇的几何结构、团簇基态的结合能、最高占据轨道与最低空轨道之间的能级间隙和可能的分离能. 结果表明, 随着团簇尺寸的增加, 能级间隙呈现奇偶振荡规律; Al2Ni2团簇具有最高的结合能, 易分离成Ni原子和Al2Ni团簇; 含Al的合金团簇最易先分离出一个Al原子, 而含Ni的合金团簇没有这种趋势.     

Observation of Nano-Dots on HOPG Surface Induced by Highly Charged Arq+ Impact

Highly charged ions （HCIs） have huge potential energy due to their high charge state. When a HCI reaches a solid surface, its potential energy is released immediately on the surface to cause a nano-scale defect. Thus, HCIs are expected to be useful for solid-surface modifications on the nano-scale. We investigate the defects on a highly oriented pyrolytic graphite （HOPG） surface induced by slow highly charged Ar^q＋ ions with impact energy of 20-2000qeV with scanning probe microscopy （SPM）. In order to clarify the role of kinetic and potential energies in surface modification, the nano-defects are characterized in lateral size and height corresponding to the kinetic energy and charge state of the HCIs. Both the potential energy and kinetic energy of the ions may influence the size of nano-defect. Since potential energy increases dramatically with increasing charge state, the potential energy effect is expected to be much larger than the kinetic energy effect in the case of extremely high charge states. This implies that pure surface modification on the nano-scale could be carried out by slow highly charged ions. The mean size of nano-defect region could also be controlled by selecting the charge state and kinetic energy of HCI.     

A Simple Hydrothermal Method for the Growth of ZnO Crystals

ZnO microstructures have been grown from zinc chloride (ZnCl₂) and ammonia solution at 100 °C for 1 – 24 hours. X‐ray diffraction, scanning electron microscope and field‐emission scanning microscope were utilized to investigate the structural properties and morphology of the ZnO crystals. Structural investigations show that phase‐pure hexagonal structure ZnO has been successfully synthesized, and the hexagonal structure ZnO can be achieved in solutions with an appropriate range of concentrations. Under our experimental conditions, several different morphologies of ZnO structures were obtained, including flower‐like and bar flower‐like. The relationship between the morphology and experimental conditions are discussed.     

丝电爆过程的电流导入机理

丝电爆制备纳米粉时, 电流从电极导入金属丝的过程直接影响电极烧损和粉末中微米级大颗粒产生. 分别通过接触和气体放电两种方式导入电流进行电爆试验. 结果表明, 光测量装置检测到的丝端部光电流几乎与回路放电电流同时产生, 而中间位置的光电流则要滞后一段时间; 由探针收集的产物确定, 金属丝端部主要形成熔融粒子, 中间部分主要形成气相粒子. 分析可知, 接触方式导入电流时, 丝端部也存在气体放电现象, 大电流主要通过气体放电形成的等离子体导入. 等离子体对电流的旁路作用会阻碍能量向金属丝沉积, 这是产生微米级大颗粒和"积瘤"主要原因. 通过气体放电方式导入电流时, 电极烧损明显减轻, 并可以避免"积瘤"产生.     

Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1-xAs buffer layer

Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-x As buffer layer are determined in order to effectively measure the body parameters for transmission-mode (t-mode) photocathode materials before Cs-O activation.Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1-x As/GaAs structure material.This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures.It also helps study various doping structures and optimize structure designs in the future.     

微纳尺度光纤布拉格光栅折射率传感的理论研究

亚波长直径微纳光纤强倏逝场传输的光学特性,使其对周围介质折射率的变化具有极高的灵敏度.本文提出一种基于微纳尺度光纤布拉格光栅(MNFBG)的折射率传感器,结合微纳光纤倏逝场传输和光纤布拉格光栅(FBG)强波长选择的特性来实现高精度折射率传感,对其制备可行性进行了讨论.论文中对MNFBG折射率传感机理进行了深入的理论分析,并使用OptiGrating软件进行了数值模拟,模拟数据显示MNFBG折射率测量的灵敏度随着光纤半径的减小而增加,其中光纤半径为400 nm的MNFBG灵敏度可达到993 nm/RIU,相比于包层蚀刻的FBG灵敏度增加了170倍,说明MNFBG对发展微型化、高灵敏度折射率传感器具有良好的应用前景. 关键词： 微纳光纤 光纤布拉格光栅 折射率传感     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

一种蓝色聚合物激光材料

聚合物作为一种有机发光材料,由于在平板显示和光电子器件中的良好应用前景而受到广泛研究［１～２］．近年来,一个重要进展是在聚合物中观测到了受激发射（简称Ｐｏｌｙ－ｍｅｒ激光）现象［３～６］．Ｐｏｌｙｍｅｒ激光最早是在溶液中实现的［３～４］．作为一种新型...