Heisenberg群上一类左不变LPDO的局部基本解及局部可解性

In this paper it is proved that local fundamental solution exists in some space W^m(H_n) (m∈Z), if the left invariant differential operator on the Heisenberg group H_n satisfies certain condition. The main results are:l.Let L be a left invariant differential operator on H_n. If there exist R≥0, r,s∈R and operators {B_λ|λ∈Γ_R} ∈V^s(Γ_R, M^r) such that, for almost all λ∈Γ_R, B_λ is the right inverse of Ⅱ_λ(L), then there exists E∈W^m(H_n) (when m≥0 or m even) or E∈W^m-1(H_n) (when m<0 and odd) such that LE =δ(near the origie) Where m=min([r],-[2s]-n-2); 2. Let L(W,T) be of the form (3.1). If there exist R≥0 and r,s∈R such that when |λ|≥R,(?) and C_λ≥ C|λ|^x(C>0), then the same conclusion as above holds with m=min(-[2r]-n-2,[-2s]-n-2).     

Li2O-B2O3-P2O5系统非晶态混合骨架效应的NMR研究

用核磁共振对非晶态中B³⁺离子的微观结构进行了测定,结合Raman光谱的研究,对Li₂O-B₂O₃-P₂O₅系统非晶态的性能(电导率、密度等)在P₂O₅/B₂O₃比约等于1时产生极值的原因从理论上作了阐明。     

Enhancement of coercivity with reduced grain size in CoCrPt film grown by pulsed laser deposition

We report a pulsed laser deposition (PLD) growth of VMn/CoCrPt bilayer with a magnetic coercivity (H_c) of 2.2 kOe and a grain size of 12 nm. The effects of VMn underlayer on magnetic properties of CoCrPt layer were studied. The coercivity, H_c, and squareness, S, of VMn/CoCrPt bilayer, is dependent on the thickness of VMn. The grain size of the CoCrPt film can also be modified by laser parameters. High laser fluence used for CoCrPt deposition produces a smaller grain size. Enhanced H_c and reduced grain size in VMn/CoCrPt is explained by more pronounced surface phase segregation during deposition at high laser fluence.     

脉冲激光偏振方向对氮分子高次谐波的影响——基于含时密度泛函理论的模拟

采用含时密度泛函方法,结合赝势模型和电子交换相关作用的广义梯度近似,模拟了氮分子在超强飞秒激光脉冲作用下的高次谐波产生现象,并研究了激光脉冲偏振方向对氮分子高次谐波的影响.结果表明氮分子的高次谐波谱具有典型原子谐波谱的特征;谐波谱强度随着θ(激光偏振方向与分子轴向夹角)的增大而减小.这与J.Itatanl在Nature上报道的实验结果基本一致.     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

The stereochemistry of 1,2-additions of allylmagnesium, allylindium, and allylbismuth to cyclohexenones

Allylmagnesium, allylindium, and allylbismuth generally showed a preference for axial addition to cyclohexenones. Allylmagnesium was the most stereoselective. Reactions with an α-methylated enone (carvone) were the most selective, except that allylbismuth was unreactive with this substrate.     

Preparation and Mechanical Properties of Fe3Al Nanostructured Intermetallics

Nanostructured Fe₃Al intermetallic compounds were produced by using hydrogen arc plasma method. The transmission electron microscopy experiments showed that the average particle size of the as-synthesized was about 40-nm. The change in hardness of Fe₃Al nanostructured intermetallic compounds with annealing temperatures was observed and evaluated.     

最有效的相容剂是两嵌段还是多嵌段聚合物？

采用Monte Carlo模拟方法研究了多嵌段聚合物在A／B／嵌段聚合物三组份体系作为相容剂使用的有效性．占总体积19％的A组份在体系中为分散相．模拟结果显示了两嵌段和多嵌段聚合物在界面上的聚集行为,以及如何影响这个不相容体系的相形为．两嵌段聚合物趋于直立在相界面上,而多嵌段聚合物更容易横跨在相界面上并占据较大的界面积．从而导致多嵌段聚合物更有效的阻止体系相分离的发生．     

s波超导体绝缘层dx2-y2波超导体结的直流Josephson电流

在s波超导体绝缘层dx2-y2波超导体结(sId)中,考虑到结界面粗糙散射,运用BogoliubovdeGennes(BdG)方程和FurusakiTsukada(FT)电流公式,计算超导结中的准粒子传输系数和直流Josephson电流.结果表明:sId超导结的直流Josephson电流随温度以及结两侧的相位差变化的关系曲线强烈地依赖于d波超导体的晶轴方位;结界面的粗糙散射对Josephson电流有抑制作用 关键词： s/I/d超导结 dx2-y2波超导体 直流Josephson电流