Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

低聚壳聚糖几何结构和物理化学属性的理论研究

运用密度泛函B3LYP/6-31G+(d)方法对gg构象的低聚壳聚糖进行了结构优化、频率计算和电子结构,并用更高精度的WB97XD/6-311+G(d,p)方法计算了平均结合能及零点能校正,分析了热力学性质.结果表明,由于低聚壳聚糖中的氢键作用,使其形成螺旋结构;聚合度的增加,使平均结合能随之下降,结构的稳定性增强;在降解过程中,均为放热反应,验证了利用降温来提高降解产率的实验的可行性;此外,聚合度的增加,使能隙减小且快速收敛于聚合度为7的6.99 eV,稳定的反应活性与实验相符;HOMO、LUMO的电子密度分布表明,化学活性集中在C2位的氨基、C6位的羟基以及链的两端位置.该结果对低聚壳聚糖模型的建立和低聚壳聚糖降解过程、活性位置以及物理化学属性的尺寸依赖等现象的研究有着指导意义.     

3D photon counting imaging at 1550 nm with 1.5-GHz sine-wave-gated InGaAs/InP GAPD

We demonstrated a 3D laser imaging system at 1550 nm with a 1.5-GHz sine-wave gated Geiger-mode InGaAs/InP avalanche photodiode (APD). An optical fiber bundle with 100 individual fiber outputs was implemented at the focal plane of the telescope, providing a 2.5-mrad imaging view. The system used single-pixel near-infrared single-photon detector to measure photons at fiber outputs instead of a photon counting array. The 1.5-GHz gated Geiger-mode InGaAs/InP APD with a timing jitter of 290 ps was operated in quasi-continuous mode with detection efficiency of ∼4.3%. We achieved higher than 6-cm surface-to-surface resolution at single-photon level, showing a potential of low-energy and eye-safe laser imaging system for long-distance measurements.     

一种改进的速度加姿态匹配传递对准方法

为了提高传统速度加姿态匹配传递对准方法的快速性,设计了一种改进的传递对准方法,该方法提出在子惯导初始化之前利用主、子惯导陀螺和加速度计测量信息进行短时间的预对准,并设计了速度加姿态匹配的传递对准滤波模型。与传统传递对准方法相比,通过在预对准阶段直接计算主、子惯导之间的安装误差矩阵,子惯导进行初始装订时可以得到较小的初始姿态误差,从而使传递对准滤波器能够快速收敛,提高了对准的快速性和精确度。试验结果表明,通过预对准后对准滤波器在30s之内即可完成对准,姿态估计误差为1′,方位估计误差为1.5′,比传统传递对准方法具有更好的对准性能。     

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

<正>We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator(SOI) dual-coupled micro-ring embedded with p-i-n diodes.A crosstalk of -23 dB is obtained in the 20-μm-radius micro-ring with the well-designing asymmetric dual-coupling structure.By optimizations of the doping profiles and the fabrication processes,the sub-nanosecond switch-on/off time of400 ps is finally realized under an electrical pre-emphasized driving signal.This compact and fast-response micro-ring switch,which can be fabricated by complementary metal oxide semiconductor(CMOS) compatible technologies,have enormous potential in optical interconnects of multicore networks-on-chip.     

气体开关抖动对单模块快脉冲直线型变压器驱动源输出特性的影响

分析了快脉冲直线型变压器驱动源(FLTD)气体开关触发击穿延时的分布规律,利用MAT-LAB软件生成随机序列模拟开关击穿延时和抖动,在FLTD简化二阶电路的基础上,利用MATLAB分析了开关抖动对40个支路并联1 MA,100 ns FLTD模块输出电流脉冲前沿和幅值的影响。模拟计算结果表明:开关理想时,即抖动为0,输出电流峰值为996 kA,峰值时间为90 ns,10%~90%脉冲前沿为54 ns;开关自身抖动与开关之间分散性之和为10 ns时,输出电流脉冲前沿增加约14%,电流峰值下降约2%;开关自身抖动与开关之间分散性之和为20 ns时,输出电流脉冲前沿增加约38%,电流峰值下降约5%。     

Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr～ 400 and tan δ < 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.     

Tunable structural color of anodic tantalum oxide films

Tantalum(Ta) oxide films with tunable structural color were fabricated easily using anodic oxidation.The structure,components,and surface valence states of the oxide films were investigated by using gazing incidence X-ray diffractometry,X-ray photoelectron microscopy,and surface analytical techniques.Their thickness and optical properties were studied by using spectroscopic ellipsometry and total reflectance spectrum.Color was accurately defined using L*a*b* scale.The thickness of compact Ta2O5 films was linearly dependent on anodizing voltage.The film color was tunable by adjusting the anodic voltage.The difference in color appearance resulted from the interference behavior between the interfaces of air-oxide and oxide-metal.     

窄带傅里叶变换光谱仪中平稳高斯噪声的理论分析

在本文所研究的空间调制型傅里叶变换光谱仪中, 在窄的光谱带宽内进行探测可以有效提高光谱的分辨率. 为了研究光源辐射噪声对系统的影响, 本文将辐射噪声归纳为一种高斯窄带的平稳随机过程, 利用线性系统分析方法, 根据统计学原理推导了辐射噪声作为随机变量通过干涉系统前后的输入信噪比与输出信噪比. 然后, 对于一个具有窄带矩形光谱的系统进行了计算仿真, 得出了信噪比增益随着光程差在不同自相关度和互相关度取值时的变化情况. 仿真结果表明, 不同光程差下的信噪比增益在相关度空间是一单调的平滑曲面, 增益极值始终沿着相关度圆的半径和周线移动, 并且经过一个光程差又回到初始的位置. 根据对信噪比增益的分析, 可以将噪声的相关度取值控制在某一范围之内, 并作为系统光源设计与测试的依据.     

不同激发波长对Sr3Al2O6∶Eu2+,Dy3+红色长余辉发光材料发射光谱的影响

采用高温固相法合成了Sr3Al2O6∶Eu2+,Dy3+长余辉发光材料。用X射线衍射仪及荧光分光光度计对材料物相及光谱性能进行了分析。结果表明:所得样品为Sr3Al2O6的纯相,在360nm波长的激发下,得到波峰为537nm的宽带发射光谱;在468nm波长的激发下,得到波峰为590nm的宽带发射光谱;在波长为394nm的激发下,537和590nm的峰同时出现。根据晶格场效应和电子云膨胀效应,对不同激发波长对Sr3Al2O6∶Eu2+,Dy3+发射光谱的影响进行了解释。结果表明:在Sr3Al2O6∶Eu2+,Dy3+中发光中心因其5d能级劈裂幅度不同及4f65d1能带重心不同而导致发光颜色的不同。