On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.     

KrF准分子激光激发掺锗光纤折射率扰动的非线性过程

本文采用了一种简单的功率监测法,观察了KrF准分子激光对掺锗光纤折射率影响的非线性过程。观察到子纤芯折射率扰动过程中非稳定现象、饱和现象和折射率扰动的非线性。     

On order-preservation and positive correlations for multidimensional diffusion processes

Summary As a continuation of the study by Herbst and Pitt (1991), this note presents two criteria. The first one is on the order-preservation for two (may be different) multidimensional diffusion processes. The second one is on the preservation of positive correlations for a diffusion process.Research supported in part by the Ying-Tung Fok Educational Foundation and the National Natural Science Foundation of China     

Deposition-evaporation stochastic systems in two and higher dimensions

We study the stochastic dynamics of deposition-evaporation cooperative processes of dimers, trimers, etc., in two- and higher-dimensional lattices. The dimer system in bipartite lattices allows for an exact solution of dynamic correlations and scaling functions by means of a quantum spin equivalence. Autocorrelations exhibit a diffusive asymptotic kinetics and crossovers of different dynamic regimes in highly anisotropic lattices. Monte Carlo simulations combined with finite-size scaling arguments support the validity of the diffusive picture in more general situations. Steady-state coverages and diffusion constants are obtained using mean-field approaches, spin wave calculations, and random walk analyses in nearly jammed configurations.     

Molecular Orbital Calculations on 2, 4, 6-Trinitrotoluene

Three ab initio calculations (HF/6-3IG, HF/6-3IG*, and HF/6-3IG**) on 2,4,6-trinitrotoluene were made, The results compare well with xray data, except dihedral angles of NO₂ relative to the plane of the benzene ring. The deviations are attributed to packing forces and steric effects in the crystal. The most stable structure was a torsional angle 10° of the methyl top with the benzene ring, unlike toluene. The rotational barriers of the methyl top and the 4-nitro group are small. Hydrogen bonding, dipole moments and total atomic charges arc calculated.     

抽样调查中最佳测量次数的确定

现场抽样调查中，由于测量误差的存在，使得所测变量实测值的方差增大，通过增加每个体的测量次数可以控制测量误差，但这样每个体调查费用增大。本文对测量信度Ｒ，每个体测量次数ｍ与相应所需的样本含量ｎｍ、调查费用Ｔｎ的关系进行了探讨，并介绍了如何根据Ｒ，及每个体测量费用占其总费用构成比Ｃ，确定最佳测量次数ｍ值，以达到最佳控制调查费用的目的，这对我们在大型现场调查中进行经济效益分析具有重大的理论指导意义。     

串联系统可靠性虚拟系统法置信下限的小样本性质

本文讨论了具有r个成败型元件串联系统可靠性的置信下限问题。研究了虚拟系统法置信下限的小样本性质,证明了,在通常情况下虚拟系统法置信下限要大于常见的L-M法置信下限.更一般地,本文证明了在成败型试验中,当成功数与试验数之比保持不变时,试验次数的增加将直接缩小成功率置信区间的长度。     

深紫外无机非线性光学晶体硼铍酸锶及其分子工程学探索方法

阐述了紫外无机非线性光学晶体分子工程学探索方法的基本特点，具体分析深紫外无机非线性光学晶体硼铍酸锶（ＳＢＢＯ）以氟硼铍酸钾（ＫＢＢＦ）为主要参考晶体的分子设计方法，随后根据晶体结构研究、单晶培养、和非线性光学性能测定等实验结果讨论ＳＢＢＯ作为新型深紫外无机晶体的主要优点，即它既具有更短的紫外吸收边（接近１５５ｎｍ）和较大的非线性光学系数（ｄ２２（ＳＢＢＯ）＝０６×ｄ２２（ＢＢＯ）＝１３８ｐｍ／Ｖ），同时晶体无明显层状习性，并肯有良好的化学稳定性和机械性能     

延长速调管使用寿命的方法

描述了一种延长EPR波谱仪中速调管使用寿命的方法.根据这种方法,只要正确地调谐微波桥的工作状态和适当地调整功率电平器的功率校正电平.即使对于已经严重老化的速调管仍然可以继续使用一段时间,维持仪器的正常运行.     

胶束荧光法测定维生素B_2含量

维生素B_2(核黄素)为人体内黄酶类辅基的组成部分,参与人体内的生物氧化作用。药典规定其含量测定用分光光度法,文献报道有高效液相色谱法、荧光法等。但因维生素B_2(V_(B2))遇光易分解,尤其在碱性水溶液中,极易变质。其降解产物为感光黄素,二氢核黄素,光化色素等,因此给测定的准确度和灵敏度造成一定的麻烦,为了提