Corrections of proofs for Hansen and Mélot's two theorems

The Randi? index R(G) of a (chemical) graph G is also called connectivity index. Hansen and Mélot [Variable neighborhood search for extremal graphs 6: analyzing bounds for the connectivity index, J. Chem. Inf. Comput. Sci. 43 (2003) 1-14] in their paper, characterized the chemical trees of given order and number of pendent vertices which have the minimum and maximum Randi? index, respectively. In this note, we point out the mistakes in the proofs of their results Theorems 8 and 10, while we still believe that the two theorems are true, and then we give their corrected proofs.     

Effect of γ-ray irradiation on the magnetic properties of NdFeB and Fe–Cr–Co permanent magnets

The effect of γ-ray irradiation on the magnetic properties of NdFeB and Fe–Cr–Co permanent magnets has been investigated. The magnetic flux loss of two kinds of magnets before and after irradiation was measured. Results show that the effect of γ-ray irradiation on the magnetic properties of sintered NdFeB is not so obvious as that on Fe–Cr–Co magnet. Irradiation-induced damage from γ-ray for the Fe–Cr–Co magnets was characterized for the first time. The decline of permanent magnetic properties of Fe–Cr–Co magnet induced by γ-ray irradiation is reversible except for the maximum energy product (BH)_max. The difference of coercivity mechanism between these two kinds of permanent magnets is responsible for the different dependence of magnetic properties loss induced by γ-ray irradiation.     

Bioaccumulation and excretion of arsenic compounds by a marine unicellular alga,polyphysa peniculus

Polyphysa peniculus was grown in artificial seawater in the presence of arsenate, arsenite, monomethylarsonate and dimethylarsinic acid. The separation and identification of some of the arsenic species produced in the cells as well as in the growth medium were achieved by using hydride generation–gas chromatography–atomic absorption spectrometry methodology. Arsenite and dimethylarsinate were detected following incubation with arsenate. When the alga was treated with arsenite, dimethylarsinate was the major metabolite in the cells and in the growth medium; trace amounts of monomethylarsonate were also detected in the cells. With monomethylarsonate as a substrate, the metabolite is dimethylarsinate. Polyphysa peniculus did not metabolize dimethylarsinic acid when it was used as a substrate. Significant amounts of more complex arsenic species, such as arsenosungars, were not observed in the cells or medium on the evidence of flow injection–microwave digestion–hydride generation–atomic absorption spectrometry methodology. Transfer of the exposed cells to fresh medium caused release of most cell–associated arsenicals to the surrounding environment.     

High temperature superconducting thin films for microwave filters

YBa₂Cu₃O_7-δ and Tl₂Ba₂CaCu₂O₈ thin films for microwave filters were synthesized by pulsed laser deposition and the two-step thalliation process. Substrate quality requirements and the relation of thin film morphology, microstructure with microwave surface resistance were discussed.     

基于TMS320C5410EVM板的IIR数字滤波器的设计

本文研究DSP中的IIR数字滤波器的原理和用MATLAB在TMS320C5410EVM中设计IIR数字滤波器的过程和设计方法以及程序的调试方法。     

地球物理正问题计算的小波方法

本将小波分析方法用于一类奇异积分方程的计算，建立了小波展开的非标准形式与标准形式转换关系，根据Mallat小波快速算法，设计了此类积分的计算算法，并通过实际例子验证了方法的有效性，计算具有速度快，运算量少的特点。     

The Generalized KKM Map and Its Applications to Variational Inequalities

In this paper,applying the concept of generalized KKM map,we study problems ofvariational inequalities.We weaken convexity(concavity)conditions for a functional of two variables■(x,y)in the general variational inequalities.Last,we show a proof of non-topological degree meth-od of acute angle principle about monotone operator as an application of these results.     

受激喇曼散射在掺铒光纤放大器中的影响

本文在分析了均匀掺杂分布式光纤放大器（d－EDFA）的基础上，提出了沿传输方向掺杂浓度单调下降（单变），和降升结合（两变）的两种渐变型分布式光纤放大器，并用传输方程研究了透明传输和最佳掺杂浓度下，受激喇曼散射对均匀、单变和两变型三种d－EDFA的各种特性的影响．     

Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm² was obtained. The emission current density from the SiNC films reached 1 mA/cm² under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.