4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底     

γ辐照掺杂SiO2的ESR研究

分别掺有磷和硼的二氧化硅经γ辐照后产生多种顺磁性中心,ESR研究指出氧空穴O^-主要稳定在杂质离子附近.O₂^-自由基稳定在Si离子上.F心的研究认为氧缺位俘获电子存在一个动态平衡过程.     

质子化丙酮分子团簇的结构和振动光谱

用密度泛函B3LYP/ 6 3 1G(d)方法 ,对质子化丙酮分子团簇 (CH3COCH3) nH+ (n =1～ 7)弱相互作用体系进行了全自由度能量梯度优化 ,得到了该系列团簇的稳定结构及其对应的体系能量 .通过对构型的分析得出了质子化丙酮分子团簇 (CH3COCH3) nH+ (n =1～ 7)的生长规律 .计算了中性丙酮分子团簇体系的质子亲合能并总结出其变化趋势 .分析讨论了质子化团簇的红外振动光谱 ,发现质子化团簇的振动光谱普遍较中性环型团簇的振动光谱复杂 ,最强的振动峰来源于质子在溶剂壳中两个氧原子之间的振动 ,而且随着团簇尺寸的增加羰基的伸缩振动峰的数目也随之增多     

Teleportation of N-particle entangled W state via entanglement swapping

A scheme for teleporting an unknown N-particle entangled W state is proposed via entanglement swapping. In this scheme, N maximally entangled particle pairs are used as quantum channel. As a special case, the teleportation of an unknown four-particle entangled W state is studied.     

有附加装置的悬臂梁应变之讨论

本文讨论了附加装置尺寸对悬臂梁纯弯曲时挠度及应变的影响。采用调节电桥电路平衡的方法,可以只读出所施的力使梁产生的挠度及应变。     

高功率LDA紧密侧面抽运Nd:YLF两级双程离轴放大系统实验研究

 介绍了一台10mm口径两级双程离轴放大系统，实现了对5mm×5mm口径光束的激光放大，耦合系统采用高功率LDA紧密侧面直接抽运棒状Nd:YLF方式。分析并实验研究了在不同抽运电流、放大脉冲与放大器LDA抽运时刻的不同延时及不同注入能量条件下，放大系统及光束每次放大时放大特性的规律。实验得到：在放大系统5mm×5mm软光阑处注入1.58mJ能量时，放大系统可输出129.2mJ能量，能量提取效率达到19.5%，满足该系统的设计指标。     

Random Sierpinski network with scale-free small-world and modular structure

In this paper, we define a stochastic Sierpinski gasket, on the basis of which we construct a network called random Sierpinski network (RSN). We investigate analytically or numerically the statistical characteristics of RSN. The obtained results reveal that the properties of RSN is particularly rich, it is simultaneously scale-free, small-world, uncorrelated, modular, and maximal planar. All obtained analytical predictions are successfully contrasted with extensive numerical simulations. Our network representation method could be applied to study the complexity of some real systems in biological and information fields.     

A study of interface characteristics in HfAlO/p-Si by deep level transient spectroscopy

Deep level transient spectroscopy (DLTS) and high-frequency capacitance-voltage (HF-CV) measurement are used for the investigation of HfAlO/p-Si interface. The so-called “slow” interface states detected by HF-CV are obtained to be 2.68 × 10¹¹ cm⁻². Combined conventional DLTS with insufficient-filling DLTS (IF-DLTS), the true energy level position of interfacial traps is found to be 0.33 eV above the valance band maximum of silicon, and the density of such “fast” interfacial traps is 1.91 × 10¹² cm⁻² eV⁻¹. The variation of energy level position of such traps with different annealing temperatures indicates the origin of these traps may be the oxide-related traps very close to the HfAlO/Si interface. The interfacial traps’ passivation and depassivation effect of postannealing in forming gas are shown by comparing samples annealed at different temperatures.     

渐变折射率光波导的精确分析

本文利用转移矩阵理论和等效衰减系数的概念，导出了渐变折射率光波导的色散方程，数值计算的结果，赢余方程的精度优于目前存在的所有近似方法。