变换溶液浓度方法研究费米共振

一些分子的拉曼散射系数随其在溶液中的浓度而变化.通过改变样品的浓度测量了CCl4,CS2和C6H6等几种溶剂的拉曼光谱并获得了费米共振的普遍规律,发现了两费米峰不对称移动、倍频峰的基频被费米共振调制并向同方向移动等弱费米共振的一些规律.这与Bier利用高压方法获得的结果相同.文章还验证了以下结论:参与费米共振的和频中的...     

两相流引射循环制冷系统性能的数值模拟

文中提出了两相流引射制冷循环系统稳定工作判据,并据此对传统两相流引射制冷循环系统进行了改进,增加了辅助蒸发器以使系统稳定工作.在此基础上,对以R134a为制冷剂的汽液两相流引射制冷循环的系统性能进行了数值模拟,分析了不同工况、不同引射比对系统性能的影响.数值模拟结果表明:在给定冷凝压力和蒸发压力工况下,两相流引射制冷循...     

双光路测量红外飞秒激光脉冲的载波包络相位稳定性

描述了利用双光路自参考技术测量红外飞秒脉冲载波包络相移的方法,并通过建立的红外飞秒脉冲载波包络相移测量装置,实验测量了自主搭建的可调谐光学参量放大系统输出的红外飞秒激光脉冲的载波包络相移.对于1.6 μm的激光脉冲,测量得到在100 s内其相位抖动为115 mrad（rms）.实验结果表明双光路法具有易于调节、测量方便、应用性强等优点. 关键词： 飞秒激光测量 自参考技术 双光路 载波包络相位     

Free-form optics for illumination

Illumination optics has been the first to benefit from advances in free-form tooling mainly because of its looser requirements (on surface accuracy and finishing). In the last decade, advances in free-form surface tooling have offered the designer possibilities for which there are few theoretical design tools. The available free-form design tools are reviewed with special attention to the most powerful: the SMS 3D design method. Examples of designs done with this method are given.     

银胶溶液pH值对结晶紫的表面增强拉曼光谱增强效果的影响

通过NaBH4还原AgNO3制得银溶胶, 分析了结晶紫溶液表面增强拉曼光谱随银胶溶液pH值减小而逐渐减弱的机理。其原因是当加入酸改变银胶溶液pH值时, 在静电力作用下H+聚集在粗糙且存在偶电层(Ag+─负吸附质)的银胶表面, 使胶体中存在的表面等离子体共振吸附态的光吸收源随着H+浓度的增加逐渐减弱。并且H+与结晶紫的竞争作用又使结晶紫与银颗粒之间的吸附数量减少, 最终使结晶紫SERS强度随着pH值减小而逐渐减弱。我们测得银胶溶液的紫外──可见吸收光谱吸收峰强度随着pH值减小而逐渐减弱, 证明了分析的正确性。     

使用SiNx原位淀积方法生长的GaN外延膜中的应力研究

采用低压MOCVD系统,在生长过程中使用SiNx原位淀积的方法产生纳米掩模,并在纳米掩模上进行选区生长和侧向外延制备了GaN外延薄膜.使用拉曼光谱和光荧光的手段对GaN外延膜中的残余应力进行了研究.研究发现,用SiNx原位淀积出纳米掩模后,GaN生长将由二维向三维转变,直到完全合并为止.利用拉曼光谱和光荧光谱分别研究了薄膜中的残余应力,两者符合得很好;这种方法生长出的GaN薄膜的应力分布较传统的侧向外延更加均匀;并且从中发现随着生长过程中SiNx原位淀积时间的增加,生长在其上的GaN外延膜中的残余应力减小.这是因为,随着SiNx原位淀积时间的增加,SiNx纳米掩模的覆盖度也增大.因此侧向外延区的比例增大,残余应力随之减小.     

Femtosecond optical Kerr effect study of Ge10As40S30Se20 film

The results of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultrafast pulses in amorphous Ge₁₀As₄₀S₃₀Se₂₀ film is reported in this paper. The film shows an optical non-linear response of 200 fs under ultrafast 80 fs-pulse excitation, and the values of real and imaginary parts of non-linear susceptibility χ⁽³⁾ were 9.0×10⁻¹² and −4.0×10⁻¹² esu, respectively. The large third-order non-linearity and ultrafast response are attributed to the ultrafast distortion of the electron orbits surrounding the average positions of the nucleus of Ge, As, S and Se atoms. This Ge₁₀As₄₀S₃₀Se₂₀ chalcogenide glass would be expected as a promising material for optical switching technique.     

MgSiO_3钙钛矿高温高压特性的第一性原理研究

本文采用第一性原理方法,计算了MgSiO_3钙钛矿在零温和0～150 GPa静水压范围内的晶体结构和弹性模量,并利用准简谐近似Debye模型,拟合三阶Birch-Murnaghan物态方程得到了其高温高压下的热力学性质.通过与现有的理论和实验的结果数据比较,确认在0～2000 K的温度区间内,第一性原理计算结合Debye模型能够较可靠地模拟在下地幔压力范围内MgSiO_3钙钛矿的热力学性质.     

Influence of Concentration of Vanadium in Zinc Oxide on Structural and Optical Properties with Lower Concentration

ZnO films doped with different vanadium concentrations are deposited onto glass substrates by dc reactive magnetron sputtering using a zinc target doped with vanadium. The vanadium concentrations are examined by energy dispersive spectroscopy （EDS） and the charge state of vanadium in ZnO thin films is characterized by x-ray photoelectron spectroscopy. The results of x-ray diffraction （XRD） show that all the films have a wurtzite structure and grow mainly in the c-axis orientation. The grain size and residual stress in the deposited films are estimated by fitting the XRD results. The optical properties of the films are studied by measuring the transmittance. The optical constants （refractive index and extinction coefficient） and the film thickness are obtained by fitting the transmittance. All the results are discussed in relation with the doping of the vanadium.     

Characterization of Cr/6H-SiC(0 0 0 1) nano-contacts by current-sensing AFM

The electrical properties and interface chemistry of Cr/6H-SiC(0 0 0 1) contacts have been studied by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr layers were vapor deposited under ultrahigh vacuum onto both ex situ etched in H₂ and in situ Ar⁺ ion-bombarded samples. The Cr/SiC contacts are electrically non-uniform. Both the measured I-V characteristics and the modeling calculations enabled to estimate changes of the Schottky barrier height caused by Ar⁺ bombardment. Formation of ohmic nano-contacts on Ar⁺-bombarded surfaces was observed.