因素空间理论与知识表示的数学框架（Ⅷ）─—变权综合原理

本文是文［１－７］的继续，研究变权综合问题，从确定变权的经验公式入手引出了变权原理，给出了变权的公理化定义，讨论了与之有关的均衡函数及其梯度向量。     

An investigation of the Al2O3-CdSe interface in accumulation

The Al₂O₃−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al₂O₃ with a concentration varying from 4·10¹⁸ to 10¹⁹ cm⁻³ eV⁻¹. The surface states have a negligible influence on the thin-film transistor operation.     

准移动闭塞系统的元胞自动机模型及列车延迟传播规律的研究

在NaSch模型的基础上，针对铁路交通的特点提出一种用于模拟准移动闭塞系统的元胞自动机模型.应用该模型模拟了准移动闭塞系统列车延迟传播的交通现象，分析了准移动闭塞系统中的轨道定位单元长度、发车时间间隔、初始延迟时间等因素对列车延迟传播的影响. 关键词： 元胞自动机 交通流 准移动闭塞     

Yb3+掺杂KY(WO4)2激光晶体生长、结构与光谱分析

采用顶部籽晶提拉法(TSSG)生长出Yb:KY(WO₄)₂(Yb:KYW)激光晶体.对预烧后的原料及晶体进行了XRD分析，结果表明，分别在920℃和600℃预烧8h后的熔质和助熔剂基本上形成一相，抑止了实验中的挥发问题；所生长的晶体为β-Yb:KYW，计算其晶格常数为a=1.063nm，b=1.034nm，c=0.755nm，β=130.75°.测得不同厚度样品的吸收光谱，结果表明样品在933nm和981nm有较强的吸收峰，计算出主峰981nm的吸收截面σ关键词： Yb:KYW TSSG法 晶体结构 光谱参数     

二氧化钒薄膜的低温制备及其性能研究

针对VO₂薄膜在微测辐射热计上的应用，采用射频反应溅射法，在室温下制备氧化钒薄膜；研究了氧分压对薄膜沉积速率、电学性质及成分的影响.通过调节氧分压，先获得成分接近VO₂的非晶化薄膜，再在400℃空气中氧化退火，便可制得高电阻温度系数，低电阻率的VO₂薄膜，电阻温度系数约为-4%/℃，薄膜方块电阻为R_□为100—300kΩ；薄膜在室温下沉积，400℃下退火的制备方法与微机电加工(micro electromechanic 关键词： 二氧化钒 电阻温度系数 氧分压 射频反应溅射法     

All retraction operators on a complete lattice form a complete lattice

H. Crapo raised in 1982 the following problem: IfP is a complete lattice, is Retr (P) a complete lattice? here Retr (P) denotes the set of all retraction operators onP with the pointwise order, that is,f≤g in Retr (P) ifff(x)≤g(x) for everyx inP. An affirmative answer will be given in the present paper.     

An approach combining the Ritz-Galerkin and finite difference methods

The nonconforming combination of Ritz-Galerkin and finite difference methods is presented for solving elliptic boundary value problems with singularities. The Ritz-Galerkin method is used in the subdomains including singularities, the finite difference method is used in the rest of the solution domain. Moreover, on the common boundary of two regions where two different methods are used, the continuity conditions are constrained only on the nodes of difference grids. Theoretical analysis and numerical experiments have shown that average errors of numerical solutions and their generalized derivatives can reach the convergence rate O(h^2-δ), where h is the mesh spacing of uniform difference grids, and δ is an arbitrarily small, positive number. This convergence rate is better than O(h), obtained by the nonconforming combination of the Ritz-Galerkin and finite element methods.     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

Scanning tunnelling microscope studies of growth of RuO2（110） thin layer on Ru（0001）

This paper reports that the growth of RuO_x(110) thin layer growth on Ru(0001) has been investigated by means of scanning tunnelling microscope (STM). The STM images showed a domain structure with three rotational domains of RuO_x(110) rotated by an angle of 120℃. The as-grown RuO_x(110) thin layer is expanded from the bulk-truncated RuO_x(110) due to the large mismatch between RuO_x(110) and the Ru(0001) substrate. The results also indicate that growth of RuO_x(110) thin layer on the Ru(0001) substrate by oxidation tends first to formation of the Ru-O (oxygen) chains in the [001] direction of RuO_x(110).