Ω-Theorems for the real part of the Riemann zeta function

For s = σ + it, σ > 1, and integer k ? 1$\text{ζ}{}^{\mathrm{k}}\text{(s) = ∑}\text{d}{}_{\mathrm{k}}\text{(n)}\text{n}{}^3$. In a previous paper, Ω results for $\text{ζ(c + it),}\text{1}\text{2}\text{? c ? 1}$, where obtained in an elementary way by choosing N = N(k, c) so that the size of the single term d_k(N) gave Ω results slightly better than existing ones. Here the method will be shown to give the same results for Re ζ(c + it).     

Study of π-adsorption by the electroreflection method

The electroreflection spectra for lead and indium electrodes in polarized light have been obtained in a solution containing aniline, benzene and 5-bromo-2-acetylthiophene. In the presence of the above-mentioned additions a new minimum appears at 2.5-2.8 eV in the spectra obtained in p-polarized light. It corresponds to the charge-transfer band in the absorption spectra for adsorbate/electrode complexes. The electrode potential has no influence on the position of this minimum.     

Hyperfine structure and isotope shift of highly excited barium-I states

High-resolution laser-spectroscopy measurements of hyperfine structure and isotope shifts were performed for the 6snd ¹ D ₂ sequence of Ba-I in the regionn=12–24. Stepwise laser excitations of a collimated atomic beam were used. A strong influence on the hyperfine structure is observed at the perturbation atn=14, caused by interaction with the 5d7d configuration. Whereas the isotope shift for the even isotopes stays essentially constant with increasingn, the odd isotopes exhibit a strong change, indicating hyperfine-induced shifts.     

Dual Feynman rules—Topological asymptotic freedom

Feynman-graph rules are formulated for the strong—interaction components of the topological expansion—defined as those graphs all of whose vertices are zero—entropy connected parts. These rules imply a “topological asymptotic freedom” and admit a corresponding perturbative evaluation where the zeroth order exhibits topological supersymmetry.     

Probing of impurity centers and conduction levels in semiconducting diamond using a MIMS system

A metal-Insulator-Metal-Semiconductor system was used to inject electrons into semiconducting diamond. Light emitted during recombination of these electrons served to monitor the diamond energy levels. The method revealed the distribution of levels in the forbidden gap and conduction levels in diamond.