Chloride ion promoted nucleophilic pentafluorophenylation of imines

Nucleophilic addition of the pentafluorophenyl group from (C₆F₅)₃SiF to non-activated imines affording α-C₆F₅-substituted secondary amines in high yield has been described. The reaction proceeds via simultaneous activation of imines and the silane reagent by means of a proton and chloride ion, respectively.     

Resolution of four k-region arene imines and mutagenicity of the optically pure aziridines

Racemic K-region imines of benz[a]anthracene, 7-methylbenz[a]anthracene, chrysene and benzo[a]pyrene ( 1–4 , respectively) have been resolved by high performance liquid chromatography on a column packed with amylose tris(3,5-dimethylphenylcarbamate) on silica gel. The absolute configuration of the resolved aziridines was assigned by comparison of their circular dichromism spectra to those of the corresponding enantiomerically pure arene oxides. The mutagenicity of the enantiomers of the arene imines was investigated using Salmonella typhimurium strains TA98 and TA100. Although all arene imines investigated were potent mutagens, quantitative and qualitative differences in the mutagenic activity were observed between enantiomers.     

Tight‐binding molecular dynamics simulation of Si?H bond dissociation in silicon clusters

New model of Si? H bond dissociation is proposed and tested in the cluster Si₁₀H₁₆ by the simulation approach that combines classic molecular dynamics method and the self‐consistent tight‐binding electronic and total energy calculation one. It is shown that the monohydride Si? H bond is unstable with respect to silicon dangling bond and bend‐bridge Si? H? Si bond formation when this cluster traps the single positive charge and that hydrogen migrates through a path involving rather rotation around the Si? Si bond than the center of this bond (the bond‐centered position). These results can be useful for understanding hydrogen‐related phenomena at surfaces, interfaces, and internal voids of various hydrogenated silicon systems: electronic devices, silicon solar cells, and nanocrystalline and porous silicon. © 2003 Wiley Periodicals, Inc. Int J Quantum Chem 93: 351–359, 2003     

Photochemical,thermal, and thermocatalytic reactions of diphenyldiazomethane with dimethyl thiophosphite

Conclusions The direct photolysis of diphenyldiazomethane in dimethyl thiophosphite gave the product of P-H insertion. The thermal reaction leads to the N-dimethoxythiophosphorylhydrazone of benzophenone and O,O-dimethyl S-(diphenylmethyl) thiophosphate. Carbenoid P-H insertion occurred in the thermocatalytic decomposition.Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 3, pp. 726–727, March, 1989.     

Detailed equilibrium principle in reversible bimolecular diffusion-controlled reactions

The expressions for the observed rate constants of the forward bimolecular and back monomolecular reactions have been obtained using the boundary conditions imposed upon the reaction surfaces of each reagent particle. The rate, equilibrium and thermodynamical parameters of the back dissociation reactions of phenoxy radical dimers have been measured. The resultant values of k^obs_?1 as a function of solvent viscosity are accurately described by theoretical relationships obtained in the present work.     

Monte—Carlo model of the diffusion-limited reaction kinetics in microheterogeneous media. Comparison with the experimental plots of the forward and backward electron phototransfer kinetics on the pore diameter in silica gel

The kinetics of the diffusion-limited decay reaction A + B B was simulated by the Monte—Carlo method on a two-dimensional square lattice with defects presented by randomly distributed sites. The cases were considered where [B] [A] at the random initial distribution (quenching reaction) and [B] = [A] with the initial distribution of the A and B particles on neighboring sites (geminate recombination). The kinetic curves were approximated by the simplest analytical equation [A]/[A]₀ = (1 – )exp[–(kt)^1–h ] + (where k and are constants). The plots of the heterogeneity parameter (h) and time-averaged first-order rate constant vs. concentration of defects (p) or B particles (in the case of quenching) were obtained and compared with similar correlations obtained earlier by the experimental study of the kinetics of forward (quenching reaction) and backward (geminate recombination) electron phototransfer on the surface of different porous silica gels. The experimental plots of h vs. silica gel porosity are in satisfactory agreement with the plots of h vs. p in the model space, if the fraction of volume inaccessible for reactants, calculated from the free silica gel volume, is chosen as the p parameter for silica gel.Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 8, pp. 1536–1541, August, 2004.     

Some physical properties of polyorganosiloxanes. I. Linear polyorganosiloxanes

Some physical properties of linear polydimethylsiloxanes have been studied. The states and transitions in polydimethylsiloxanes have been investigated by using the method of dynamic heat capacity and a thermomechanic method in the temperature range from ?150 to +200°C. The temperature dependence of primary and secondary crystallization has been studied by optical, calorimetric, and x-ray methods.     

Isotopic splitting in matrix isolated BF3

Small isotopic frequency shift information, if precisely determined, provides an effective constraint on intramolecular force fields. The most precise data for these frequency shift parameters Δν are derived from high resolution, gas-phase infrared spectral analyses. In the present study, we compare for BF₃ the isotopic frequency shift Δν₄ from a recently published gas-phase study with the value for Δν₄ that we obtain from the spectrum of matrix isolated BF₃. The excellent agreement between the two methods suggests further applications of the matrix technique for obtaining precise frequency shift data.     

The effect of the sintering atmosphere on the densification of B4C ceramics

Densification of boron carbide during sintering may be improved by a two-stage process, namely heating to 2000°C under vacuum and sintering at 2190°C under argon. This sintering regime allows achieving a relative density of the ceramic bodies fabricated from a fine powder higher than 95%. The nitrogen treatment of the boron carbide phase at 1900°C leads to the formation of the BN phase and precipitation of graphite. Vacuum treatment of these samples at 2000°C leads to decomposition of the boron nitride phase. The liberated free boron may again react with graphite to form in situ boron carbide particles. The experimental investigations of the sintering behavior of the boron carbide phase under various atmospheres supported the thermodynamic predictions regarding the phase transformation. No evidence, however, was found for enhanced sintering under a nitrogen atmosphere.