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H.-J. Michel H. Leiste E. Nold J. Halbritter 《Analytical and bioanalytical chemistry》1995,353(5-8):625-630
Thin SnO2 films have been prepared for H2-gas sensor application by RF magnetron sputtering onto different SiO2 based glasses. ARXPS and sputter-AES measurements have been performed to evaluate the compounds at SnO2-TiN-Au contacts as well as the depth-dependent composition at SnO2-substrate-interfaces. A Tioxynitride compound has been identified as a boundary layer between SnO2 and TiN. Enrichments of the substrate components Ba, B or Na have been percepted at the interface of SnO2 and glass. These observations explain the activated interface conduction path by a strongly doped interdiffusion layer. 相似文献
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Ferromagnetic nanocomposite (Fe44Co56)77Hf12N11 films were deposited to investigate their intrinsic damping mechanisms due to scattering of itinerant electrons, which carry the magnetic moment of the ferromagnetic transition elements. The films were produced by reactive r.f. magnetron sputtering using a 6 in. Fe37Co46Hf17 target. They were annealed at 400 °C in a static magnetic field, in order to induce in-plane uniaxial anisotropy. Subsequently, the films can be considered as uniformly magnetised. A ferromagnetic resonance frequency (FMR) of around 2.3 GHz could be attained, which was determined by measuring the real and imaginary parts of the frequency dependent permeability up to 5 GHz. The imaginary part, which represents a typical resonance curve, was utilised to obtain its full-width at half-maximum Δfeff (FWHM) for the total damping behaviour characterisation. Thereby, it is possible to extract the intrinsic Gilbert damping parameter αint, which in turn can be decomposed into two additional damping terms αsf and αos allocated to “spin-flip” and “ordinary scattering”, respectively. This result is correlated and discussed in terms of a verified theoretic model, to identify whether damping due to spin-flip scattering and/or ordinary scattering is dominant. 相似文献