Influence of grain growth on the high-frequency behaviour of ferromagnetic Fe-Co-(M)-N (M=Ta, Hf) nanocomposite films

The CMOS compatible ferromagnetic Fe-Co-(M)-N (M=Ta, Hf) films were investigated with regard to their grain size-dependent frequency behaviour. Predominantly Fe₃₃Co₄₀Ta₁₀N₁₇ films were deposited by reactive r.f. magnetron sputtering. These films were compared to Fe₃₆Co₄₄Hf₉N₁₁ films. In order to induce an in-plane uniaxial anisotropy H_u as well as to investigate the grain growth behaviour, the films were annealed in a static magnetic field. The in-plane uniaxial anisotropy field of around 4 mT as well as a good soft magnetic behaviour with a saturation polarisation of approximately 1.2-1.4 T could be observed after heat treatment. Ferromagnetic resonance frequencies (FMR) of approximately up to 2.4 GHz could be achieved according to the Kittel theory. Depending on the heat treatment, high-frequency losses through energy dissipation was made conspicuous by means of the full-width at half-maximum (FWHM) Δf_eff of the imaginary part of the frequency-dependent permeability which was between 0.4 and 1 GHz. This FWHM was basically discussed in terms of two-magnon scattering theories, in combination with the Herzer random anisotropy model. In order to correlate the resonance line broadening with a phenomenological damping parameter α_eff, which ranged from about 0.0125 to 0.028, the modified Landau-Lifschitz-Gilbert equation was used to fit and describe the permeability spectra of the ferromagnetic films.     

Interface studies on magnetron-sputtered SnO2-films

Thin SnO₂ films have been prepared for H₂-gas sensor application by RF magnetron sputtering onto different SiO₂ based glasses. ARXPS and sputter-AES measurements have been performed to evaluate the compounds at SnO₂-TiN-Au contacts as well as the depth-dependent composition at SnO₂-substrate-interfaces. A Tioxynitride compound has been identified as a boundary layer between SnO₂ and TiN. Enrichments of the substrate components Ba, B or Na have been percepted at the interface of SnO₂ and glass. These observations explain the activated interface conduction path by a strongly doped interdiffusion layer.     

Damping and ferromagnetic resonance linewidth broadening in nanocrystalline soft ferromagnetic Fe–Co–Hf–N films

In order to describe high-frequency damping mechanisms of ferromagnetic films by means of the imaginary part of the frequency-dependant permeability, CMOS compatible ferromagnetic Fe₃₆Co₄₄Hf₉N₁₁ films were deposited by reactive r.f. magnetron sputtering on oxidised 5×5 mm²×380 μm (1 0 0)-silicon substrates with a 6-in. Fe₃₈Co₄₇Hf₁₅ target, as well as magnetic field annealing between 300 and 600 °C. An in-plane uniaxial anisotropy of around 4.5 mT as well as an excellent soft magnetic behaviour with a saturation polarisation of approximately 1.4 T could be observed after heat treatment at the above-mentioned temperatures, which drives these films to a high-frequency suitability. Ferromagnetic resonance frequencies of approximately up to 2.4 GHz could be obtained. The frequency-dependant permeability was measured with a broadband permeameter. Depending on the heat treatment, an increase of the full-width at half-maximum (FWHM) of the imaginary part of the frequency-dependant permeability is discussed in terms of two-magnon scattering, anisotropy-type competition and local resonance generation through predominant grain growth causing magnetisation and anisotropy inhomogeneities in the magnetic films. The grain size of the films was determined by (HRTEM) imaging and amounts from a few nanometres for films heat treated at 300 °C to more than 10 nm at 600 °C where the FWHM Δf_eff and the Landau–Lifschitz–Gilbert equation damping parameter α_eff increases with d_nm² and d_nm (e.g. d_nm is the grain diameter of the nonmagnetic Hf–N phase), respectively.     

Nachweis und Bestimmung von Molybd?n

Ohne Zusammenfassung     

Über die elektrische Oberflächenleitfähigkeit von Preßbernstein

Zeitschrift für Physik A Hadrons and nuclei - Der Isolationswert des heute für Elektrometer bevorzugten Preßbernsteins ist in feuchter Luft nicht durch seine...     

Die quantitative Analyse der Wolframverbindungen

Ohne Zusammenfassung     

Interface studies on magnetron-sputtered SnO2-films

Thin SnO₂ films have been prepared for H₂-gas sensor application by RF magnetron sputtering onto different SiO₂ based glasses. ARXPS and sputter-AES measurements have been performed to evaluate the compounds at SnO₂-TiN-Au contacts as well as the depth-dependent composition at SnO₂-substrate-interfaces. A Tioxynitride compound has been identified as a boundary layer between SnO₂ and TiN. Enrichments of the substrate components Ba, B or Na have been percepted at the interface of SnO₂ and glass. These observations explain the activated interface conduction path by a strongly doped interdiffusion layer.     

Hydrothermal alteration of BaxMIVxCe2?2 x (PO4)2 [MIV=Zr, Hf] as hosts for minor actinides

Ba_xM^IV _xCe_2−2x (PO₄)₂ [M^IV=Zr, Hf] monazite-like compounds were succesfully synthesized by solid state reaction for x≤0.2 (M^IV=Zr) and x≤0.1 (M^IV=Hf). The low miscibility of BaM^IV(PO₄)₂ (M^IV=Zr, Hf) compounds in CePO₄ was explained on the basis of the monoclinic-to-trigonal phase transition that occurs at 733 K in BaZr(PO₄)₂ and at 798 K in BaHf(PO₄)₂. The hydrothermal alteration of these compounds was tested using a modified MCC-1 static leaching test in acid (1 mol·dm⁻³ HCl) and basic (1 mol dm⁻³ KOH) solutions at 373 K, 473 K and 573 K; both the experimental fluids and the reacted solid specimens were analyzed by different analytical techniques and the reaction mechanisms were elucidated. All the tested compounds are stable in 1 mol·dm⁻³ HCl until 573 K. The stability of the monazites in 1 mol·dm⁻³ KOH is a function of the temperature.