A trace class operator inequality

In this note, we generalize the inequality about the trace of positive semidefinite matrix trk(AB)?k(trA)k(trB) to Hilbert space, and obtain a relevant inequality about positive trace class operator.     

迭代的计算与估计

对高次多项式函数这类非线性映射给出了一般 n次迭代的一个计算结果 ,还讨论了一维欧氏空间中一些非多项式型映射的迭代 .在二维欧氏空间中 ,我们给出了几类特殊的非线性迭代的结果 .对于一些难以精确计算迭代表达式的映射 ,我们给出了其迭代的估计 .     

Synthesis and optoelectronic properties of silole‐containing polyfluorenes with binary structures

2,5‐Bis(2‐bromofluorene‐7‐yl)silole was prepared by a modified one‐pot synthesis with a reverse addition procedure, from which novel silole‐containing polyfluorenes with binary random and alternating structures (silole contents between 4.5 and 25% and high M_w up to 509 kDa were successfully synthesized. The well‐defined repeating unit of the alternating copolymer comprises a terfluorene and a silole ring. Optoelectronic properties including UV absorption, electrochemistry, photoluminescence (PL), and electroluminescence (EL) of the copolymers were examined. The different excitation energy transfers from fluorene to silole of the copolymers in solution and in the solid state were compared. The films of the copolymers showed silole‐dominant green emissions with high absolute PL quantum yields up to 83%. EL devices of the copolymers with a configuration of ITO/PEDOT/copolymer/Ba/Al displayed exclusive silole emissions peaked at around 543 nm and the highest EL efficiency was achieved with the alternating copolymer. Using the alternating copolymer and poly(9,9‐dioctylfluorene) as the blend‐type emissive layer, a maximum external quantum efficiency of 1.99% (four times to that of the neat film) was realized, which was a high efficiency so far reported for silole‐containing polymers. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 756–767, 2007     

Generalized optical logic elements - GOLEs

A Generalized Optical Logic Element or GOLE is device that performs any of the 16 Boolean logic operations on signals in an optical beam with very fast switching among functions. The advantages of a generalized or universal gate in manufacturing are obvious. Extremely flexible functioning becomes possible if the GOLE functionality is switched in response to earlier computations. Likewise Field Programmable Gate Arrays or FPGAs can be used to fix the GOLE functions, making one of the most powerful and flexible processor units ever designed - called a Field GOLE. Such systems can be made in bulk optics to utilize Spatial Light Modulator or SLM capabilities, but integrated optics on silicon will be the choice for most applications. GOLEs can be generalized in several ways to become Fredkin gates and generalized Fredkin gates. They can also be cascaded similarly to electronic gates.     

On a phase-change problem arising from inductive heating

In this paper we study a phase-change problem arising from induction heating. The mathematical model consists of time-harmonic Maxwell’s system in a quasi-stationary field coupled with nonlinear heat conduction. The enthalpy form is used to characterize the phase-change in the material. It is shown that the problem has a global solution. Moreover, it is shown that the solution is unique and regular in one-space dimension even with an unbounded resistivity. This work is supported in part by a NSF grant: DMS-0102261     

脉冲激光偏振方向对氮分子高次谐波的影响——基于含时密度泛函理论的模拟

采用含时密度泛函方法,结合赝势模型和电子交换相关作用的广义梯度近似,模拟了氮分子在超强飞秒激光脉冲作用下的高次谐波产生现象,并研究了激光脉冲偏振方向对氮分子高次谐波的影响.结果表明氮分子的高次谐波谱具有典型原子谐波谱的特征;谐波谱强度随着θ(激光偏振方向与分子轴向夹角)的增大而减小.这与J.Itatanl在Nature上报道的实验结果基本一致.     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

300kVA高温超导变压器电流引线漏热损耗的测量

电流引线是高温超导变压器的主要外部漏热来源,它的漏热量直接影响了超导变压器的经济性能,因此,引线的设计与漏热测量一直备受关注。文中构建了一个实验方案,运用量热法测量低压引线的漏热,并将试验结果与仿真预期值进行了对比和分析,从而验证了仿真设计的正确性。