Compact 10-GHz Nd:GdVO4 laser with 0.5-W average output power and low timing jitter

We demonstrate a compact, diode-pumped Nd:GdVO4 laser with a repetition rate of 9.66 GHz and 0.5-W average output power. The laser is passively mode locked with a semiconductor saturable absorber mirror (SESAM), yielding 12-ps-long sech2-shaped pulses. For synchronization of the pulse train to an external reference clock, the SESAM is mounted on a piezoelectric transducer. With an electronic feedback loop of only a few kilohertz loop bandwidth we achieved a rms timing jitter of 146 fs (integrated from 10 Hz to 10 MHz). This is an upper limit because it is mostly limited by the measurement system. The laser setup with a simple linear cavity has a footprint of only 130 mm x 30 mm.     

Photoluminescence of CdGeP2 and (Cd,Mn)GeP2

Photoluminescence of CdGeP₂ (112) single crystal and CdGeP₂ epitaxial film grown on GaAs (001) substrate have been studied and their spectral similarity found. Spectral bands associated with donor/acceptor transitions peak at close energies for both substances and all are lower than the energy gap of the chalcopyrite crystal.On the other hand, the growth of (Cd,Mn)GeP₂ ferromagnetic layer on CdGeP₂ (112) single crystal was performed to make it possible observation of PL from both the ferromagnetic layer and substrate. The green laser excitation (514, 532 nm) produces a proper photoluminescence similar to that in the undoped CdGeP₂ crystal and film. An extra emission from the ferromagnetic-nonmagnetic heterojunction occurs to extend up to photon energies exceeding E_g of the host semiconductor. The short wavelength photoluminescence is to be due to (Cd,Mn)GeP₂ dilute magnetic semiconductor (DMS). This fact states that Mn-doped II-IV-V₂ chalcopyrites are closer to II-VI DMS than to another group III-V DMS, where the heavy Mn-doping suppresses photoluminescence at all. Features of the observed short wavelength emission are discussing based on the temperature and spectral analyses.     

Nondestructive Rydberg atom counting with mesoscopic fields in a cavity

We present an efficient, state-selective, nondemolition atom-counting procedure based on the dispersive interaction of a sample of circular Rydberg atoms with a mesoscopic field contained in a high-quality superconducting cavity. The state-dependent atomic index of refraction, proportional to the atom number, shifts the classical field phase. A homodyne procedure translates the information from the phase to the intensity. The final field intensity is readout by a mesoscopic atomic sample. This method opens promising routes for quantum information processing and nonclassical state generation with Rydberg atoms.     

Two-dimensional hard x-ray beam compression by combined focusing and waveguide optics

A two-dimensionally confining x-ray channel waveguide structure is combined with a high gain Kirkpatrick-Baez prefocusing mirror system yielding a hard x-ray beam with a cross section of 25 x 47 nm(2) (FWHM). Unlike the previously employed resonant beam coupling scheme, the incoming beam is coupled in from the front side of the waveguide and the waveguided beam is no longer accompanied by spurious reflected or transmitted beams. The field distribution in the waveguide channel has been calculated numerically. The calculated transmission and far-field intensity pattern are in good agreement with the experimental results.     

Measurement of geometric phase for mixed states using single photon interferometry

Geometric phase may enable inherently fault-tolerant quantum computation. However, due to potential decoherence effects, it is important to understand how such phases arise for mixed input states. We report the first experiment to measure mixed-state geometric phases in optics, using a Mach-Zehnder interferometer, and polarization mixed states that are produced in two different ways: decohering pure states with birefringent elements; and producing a nonmaximally entangled state of two photons and tracing over one of them, a form of remote state preparation.     

Evolution of hole depth and shape in ultrashort pulse deep drilling in silicon

We report on the temporal evolution of the percussion drilling process in deep laser drilling. Ultrashort laser pulses at 1030 nm and a duration of 8 ps were used to machine silicon while simultaneously imaging the silhouette of the hole using an illumination wavelength above the band edge. We investigate the influence of the processing parameters fluence and pulse energy on the depth and shape of the hole demonstrating different phases of the drilling process. In the first phase, a tapered hole is formed with highly reproducible shape and depth. In the following, the evolution of the hole shape is irregular and imperfections like bulges, changes of the drilling direction and the formation of multiple hole ends occur. In the final phase, the maximum depth stays constant while the volume still increases due to enlargement of the hole diameter and the possible formation of multiple hole ends. Deviations from the ideal hole shape occur primarily in the lower part of the hole. Their extent can be reduced by increasing the amount of applied pulse energy. Moreover, the pulse energy is chiefly determining the maximum achievable hole depth, which is largely independent of the focusing conditions and corresponding fluence.     

Long-lived ultrafast spin precession in manganese alloys films with a large perpendicular magnetic anisotropy

Spin precession with frequencies up to 280 GHz is observed in Mn(3-δ)Ga alloy films with a perpendicular magnetic anisotropy constant K(u)～15 M?erg/cm(3). The damping constant α, characterizing macroscopic spin relaxation and being a key factor in spin-transfer-torque systems, is not larger than 0.008 (0.015) for the δ=1.46 (0.88) film. Those are about one-tenth of α values for known materials with large K(u). First-principles calculations well describe both low α and large K(u) for these alloys.     

Analysis on dependence of phase matching angle on temperature in KDP crystal

The dependence of the phase matching (PM) angle on temperature in type-I second harmonic generation (SHG) and type-II third harmonic generation (THG) of KDP is experimentally investigated. The experimental results show that as the crystal temperatures vary by 1 °C, the external PM angles of the KDP doubler and tripler change 100 μrad and 220 μrad, respectively. The PM angle of KDP tripler is more sensitive to temperature variation than is that of the KDP doubler. Comparing the numerical calculations and the previous reports, a discrepancy has been found among the different reported results. Based on the analytical solution of the temperature dependence of the SHG process it is shown that a small error in the thermo-optic coefficients of the crystal is the main factor source of the discrepancy.     

Transition from the 0 state to the π state in S-FNF-S Josephson structures

The critical current I _C of S-FNF-S Josephson structures has been calculated as a function of the distance between the superconducting (S) electrodes, L, via the Usadel semiclassical equations for the case of specifying the supercurrent in the direction parallel to the interface between the ferromagnetic (F) and normal (N) films of the composite weak-link region. It has been shown that, owing to the interaction between the F and N films, both the typical decrease scale of the critical current and the period of its oscillations to lengths of the scale ξ_N can be much larger than the respective quantities for the SFS junctions. Moreover, this interaction changes both the magnitude and sign of the critical current. It has been shown that the critical current in a structure with the collinear magnetization vectors of the films can be significantly different from the critical current in a structure with the antiparallel magnetization of the F films.     

Focusing of X-Rays inside a single crystal under the temperature gradient

A method for experimental investigation of the effect of X-ray focusing inside a single crystal subject to temperature gradient is proposed. The definition of diffracted X-ray focusing inside the crystal is shown to increase depending on the value of temperature gradient.