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101.
C. Maurel 《Surface science》2006,600(2):442-447
Light emitted in the tunneling junction of a scanning tunneling microscope has been used to establish the electrical characteristics of nanojunctions made of Au islands deposited on flat MoS2 surfaces. It is shown that these characteristics are those of rectifying contacts when the gold islands are isolated and that they evolve toward those of ohmic contacts when the island density increases. It is observed that the rectifying behavior also evolves over time as on infinite metal/semiconductor contacts. Using the STM tip, single gold islands can be manipulated on the MoS2 surface so that their electrical behavior can be changed depending on their position with regard to the other islands.  相似文献   
102.
Laryngotracheal stenosis is defined as a congenital or acquired narrowing of the airway. Congenital causes may include subglottic membranous or cartilaginous narrowing. Acquired causes may include trauma due to prolonged endotracheal or tracheal intubation or laryngotracheal injury. Although advances have been made over the past 30 years in reconstructive surgeries to improve airway patency in these patients, long-term laryngeal function for voice production is not well defined in this population. This review examines causes, symptoms and signs, and methods for diagnosing laryngotracheal stenosis. Surgical management procedures are briefly summarized. The current literature on voice outcomes is summarized. The predominant voice characteristics in the population are presented, although results are challenged by the heterogeneity of voice presentation and paucity of data from instrumental measures. Considerations for subjective and instrumental assessment, measures of quality of life, instrumental methods, and treatment options specific to the needs of this population are discussed. Research strategies to identify long-term outcomes of surgical and behavioral treatments in this population are posed.  相似文献   
103.
The influence of processing parameters on the electrical characteristics of RuO2/LaAlO3/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO3 on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result is explained by oxygen ability to heal oxygen vacancies in the LaAlO3 film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO3 on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime. PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc  相似文献   
104.
We have developed a new tool for numerical work in General Relativity: GRworkbench. We discuss how GRworkbench's implementation of a numerically-amenable analogue to Differential Geometry facilitates the development of robust and chart-independent numerical algorithms. We consider, as an example, geodesic tracing on two charts covering the exterior Schwarzschild space-time.  相似文献   
105.
 We study the eigenvalue problem with the boundary conditions that decays to zero as z tends to infinity along the rays , where is a real polynomial and . We prove that if for some we have for all , then the eigenvalues are all positive real. We then sharpen this to a larger class of polynomial potentials. In particular, this implies that the eigenvalues are all positive real for the potentials when with , and with the boundary conditions that decays to zero as z tends to infinity along the positive and negative real axes. This verifies a conjecture of Bessis and Zinn-Justin. Received: 16 January 2002 / Accepted: 1 May 2002 Published online: 6 August 2002  相似文献   
106.
The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.  相似文献   
107.
108.
Y.Y. Lee 《Applied Acoustics》2002,63(11):1157-1175
The nonlinear natural frequency of a rectangular box, which consists of one flexible plate and five rigid plates, is studied in this paper. The flexible plate is assumed to vibrate like a simple piston. The behavior of the structural-acoustic coupling between the flexible plate and the air cavity is analyzed by using the proposed finite element modal method. The system finite element equation is reduced and expressed in terms of the modal coordinates with small degrees of freedom by using the proposed reduction method. The system nonlinear stiffness matrix representing the large amplitude vibration can be transformed to be a constant modal matrix. The natural frequencies are determined by using the harmonic balance method to solve the eigenvalue equations of the structural-acoustic system. The effect of the cavity depth on the natural frequencies and convergence studies are discussed in detail.  相似文献   
109.
We consider Ising-spin systems starting from an initial Gibbs measure ν and evolving under a spin-flip dynamics towards a reversible Gibbs measure μ≠ν. Both ν and μ are assumed to have a translation-invariant finite-range interaction. We study the Gibbsian character of the measure νS(t) at time t and show the following: (1) For all ν and μ, νS(t) is Gibbs for small t. (2) If both ν and μ have a high or infinite temperature, then νS(t) is Gibbs for all t > 0. (3) If ν has a low non-zero temperature and a zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t and non-Gibbs for large t. (4) If ν has a low non-zero temperature and a non-zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t, non-Gibbs for intermediate t, and Gibbs for large t. The regime where μ has a low or zero temperature and t is not small remains open. This regime presumably allows for many different scenarios. Received: 26 April 2001 / Accepted: 10 October 2001  相似文献   
110.
In this paper we introduce a generalization of stable sets: stable multi-sets. A stable multi-set is an assignment of integers to the vertices of a graph, such that specified bounds on vertices and edges are not exceeded. In case all vertex and edge bounds equal one, stable multi-sets are equivalent to stable sets.  For the stable multi-set problem, we derive reduction rules and study the associated polytope. We state necessary and sufficient conditions for the extreme points of the linear relaxation to be integer. These conditions generalize the conditions for the stable set polytope. Moreover, the classes of odd cycle and clique inequalities for stable sets are generalized to stable multi-sets and conditions for them to be facet defining are determined.  The study of stable multi-sets is initiated by optimization problems in the field of telecommunication networks. Stable multi-sets emerge as an important substructure in the design of optical networks. Received: February 14, 2001/Revised version: September 7, 2001  相似文献   
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