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41.
42.
The deposition of decomposed ethylene on silicon wafer at lower temperature using hot filament chemical vapor deposition (HFCVD) method was applied to compose thin film of carbon and its compounds with silicon and hydrocarbon structures. The films were analyzed using Raman spectroscopy, X-ray diffraction, and scanning electron microscopy with elemental microanalysis by energy dispersive X-ray spectrometer. The structure and morphology of the early stage of the film deposition was analyzed. The obtaining of SiC as well as diamond-like structure with this method and catalytic influence of chemical admixtures on the film structure and properties are discussed.  相似文献   
43.
44.
By showing that there is an upper bound for the price of anarchyρ(Γ) for a non-atomic congestion game Γ with only separable cost maps and fixed demands, Roughgarden and Tardos show that the cost of forgoing centralized control is mild. This letter shows that there is an upper bound for ρ(Γ) in Γ for fixed demands with symmetric cost maps. It also shows that there is a weaker bound for ρ(Γ) in Γ with elastic demands.  相似文献   
45.
Chepoi showed that every breadth first search of a bridged graph produces a cop-win ordering of the graph. We note here that Chepoi's proof gives a simple proof of the theorem that G is bridged if and only if G is cop-win and has no induced cycle of length four or five, and that this characterization together with Chepoi's proof reduces the time complexity of bridged graph recognition. Specifically, we show that bridged graph recognition is equivalent to (C4,C5)-free graph recognition, and reduce the best known time complexity from O(n4) to O(n3.376).  相似文献   
46.
High responsivity, LWIR dots-in-a-well quantum dot infrared photodetectors   总被引:1,自引:0,他引:1  
In this paper we report studies on normal incidence, InAs/In0.15Ga0.85As quantum dot infrared photodetectors (QDIPs) in the dots-in-a-well (DWELL) configuration. Three QDIP structures with similar dot and well dimensions were grown and devices were fabricated from each wafer. Of the three devices studied, the first served as the control, the second was grown with an additional 400 Å AlGaAs blocking layer, and the third was grown on a GaAs n+ substrate with the intention of testing a single pass geometry. Spectral measurements on all three devices show one main peak in the long-wave IR (≈8 μm). The absorption was attributed to the bound-to-bound transition between the ground state of the InAs quantum dot and the ground state of the In0.15Ga0.85As well. Calibrated peak responsivity and peak detectivity measurements were performed on each device at 40, 60, and 80 K. For the same temperatures, frequency response measurements from 20 Hz to 4 kHz at a bias of Vb=−1 V were also performed. The addition of the blocking layer was shown to slightly enhance responsivity, which peaked at 2.4 A/W at 77 K, Vb=−1 V and responsivity was observed to be significantly reduced in the single pass (n+ substrate) sample. The rolloff of the frequency response was observed to be heavily dependent on temperature, bias, and irradiance. The results from the characterization of each sample are reported and discussed.  相似文献   
47.
本文运用信息保存法对低速二维的流动现象进行模拟,考察了低速条件下的有限平板绕流以及微槽道气体流动问题。研究表明:在对低速流动的模拟过程中,运用IP法在能够获得较好的结果的同时,具有比DSMC方法更高的计算效率。  相似文献   
48.
A model for the dynamic, adhesive, frictionless contact between a viscoelastic body and a deformable foundation is described. The adhesion process is modeled by a bonding field on the contact surface. The contact is described by a modified normal compliance condition. The tangential shear due to the bonding field is included. The problem is formulated as a coupled system of a variational equality for the displacements and a differential equation for the bonding field. The existence of a unique weak solution for the problem is established, together with a partial regularity result. The existence proof proceeds by construction of an appropriate mapping which is shown to be a contraction on a Hilbert space.  相似文献   
49.
There are several fuelling methods for tokamak plasma: pellet injection (PI), gas puffing (GP), neutral beam injection (NBI) and supersonic molecular beam injection (SMBI) .SMBI has been created in the Southwestern Institute of Physics, China.  相似文献   
50.
High quality factor of dynamic structures at micro and nano scale is exploited in various applications of micro electro-mechanical systems (MEMS) and nano electro-mechanical system. The quality factor of such devices can be very high in vacuum. However, when vacuum is not desirable or not possible, the tiny structures must vibrate in air or some other gas at pressure levels that may vary from atmospheric to low vacuum. The interaction of the surrounding fluid with the vibrating structure leads to dissipation, thus bringing down the quality factor. Depending on the ambient fluid pressure or the gap between the vibrating and the fixed structure, the fluid motion can range from continuum flow to molecular flow giving a wide range of dissipation. The relevant fluid flow characteristics are determined by the Knudsen number which is the ratio of the mean free path of the gas molecule to the characteristic flow length of the device. This number is very small for continuum flow and reasonably big for molecular flow. In this paper, we study the effect of fluid pressure on the quality factor by carrying out experiments on a MEMS device that consists of a double gimbaled torsional resonator. Such devices are commonly used in optical cross-connects and switches. We only vary fluid pressure to make the Knudsen number go through the entire range of continuum flow, slip flow, transition flow, and molecular flow. We experimentally determine the quality factor of the torsional resonator at different air pressures ranging from 760 Torr to 0.001 Torr. The variation of this pressure over six orders of magnitude ensures required rarefaction to range over all flow conditions. Finally, we get the variation of quality factor with pressure. The result indicates that the quality factor, Q, follows a power law, QP r , with different values of the exponent r in different flow regimes. In the second part of the paper, we propose the use of effective viscosity for considering velocity slip conditions in solving Navier–Stokes equation numerically. This concept is validated with analytical results for a simple case and then compared with the experimental results presented in this paper. The study shows that the effective viscosity concept can be used effectively even for the molecular regime if the air-gap to length ratio is sufficiently small (h 0/L<0.01). As this ratio increases, the range of validity decreases.  相似文献   
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