多检测GPC/SEC技术在高分子表征中的应用Ⅳ.氘化高分子的溶液性质

采用体积排斥色谱法／ 示差折光指数／ 直角激光光散射／ 示差粘度三检测联用技术表征了氘化聚苯乙烯、聚苯乙烯和氘化聚苯乙烯－ 聚异戊二烯。结果表明,在θ条件下,虽然氘化聚苯乙烯的化学依赖性常数υＴ,ＤＰＳ比聚苯乙烯的化学依赖性常数υＴ,ＰＳ大,但２５ ℃时在四氢呋喃中,氘化聚苯乙烯的分子尺寸仍小于聚苯乙烯的分子尺寸。由于嵌段共聚物的淋洗体积随组成变化,所以用传统的ＳＥＣ／ＲＩ得不到准确的分子量。经比较膜渗透、小角激光光散射和基质辅助激光脱吸与离子化时间飞行质谱等的实验结果,证明体积排斥色谱法／ 示差折光指数／ 直角激光光散射／ 示差粘度三检测技术能准确地得到氘化二嵌段共聚物的分子量以及其它重要信息。     

砷的代谢机制、毒性和生物监测

砷化合物是备受关注的一类污染物,特别是饮用水中的砷污染引发了全球性的健康问题.本文综述了近年来人们对砷的代谢机制、毒性和生物监测的研究进展.砷在生物体内的代谢过程十分复杂,在氧化还原酶和甲基转移酶的参与下,产生一系列的代谢产物和中间产物.其中,砷的原始摄入形态、代谢产物及中间产物由于不同的物理化学性质,体现了不同的毒性.人类和不同的动物由于不同的砷代谢机理和甲基化能力,也表现了对砷毒性抵抗能力的差异.在生物体内,一些砷化合物与生物蛋白相互作用,影响它们的存在形式、分布和传输,是砷的生物代谢和毒理研究中不可或缺的内容.生物监测是一种直接有效的污染物健康风险评估方法.在尿液、血液、唾液、头发和指甲中砷化合物直接反映了暴露主体的砷暴露程度,这5种生物介质作为砷暴露的生物标志物各有优缺点.在砷的研究中,代谢机制和毒性的研究可以帮助选择合适的生物监测方法,做出合理准确的健康风险评估.生物监测也可促进对砷的代谢机制和毒性的理解,推断可能的代谢途径,定量毒性剂量效应,两者相互依赖相互促进.     

Electrolytic Formation of Crystalline Silicon/Germanium Alloy Nanotubes and Hollow Particles with Enhanced Lithium‐Storage Properties

Crystalline silicon(Si)/germanium(Ge) alloy nanotubes and hollow particles are synthesized for the first time through a one‐pot electrolytic process. The morphology of these alloy structures can be easily tailored from nanotubes to hollow particles by varying the overpotential during the electro‐reduction reaction. The continuous solid diffusion governed by the nanoscale Kirkendall effect results in the formation of inner void in the alloy particles. Benefitting from the compositional and structural advantages, these SiGe alloy nanotubes exhibit much enhanced lithium‐storage performance compared with the individual solid Si and Ge nanowires as the anode material for lithium‐ion batteries.     

Directed and elliptic flow in 197Au+197Au at intermediate energies

Directed and elliptic flow for the ¹⁹⁷Au+¹⁹⁷Au system at incident energies between 40 and 150 MeV per nucleon has been measured using the INDRA 4π multi-detector. For semi-central collisions, the excitation function of elliptic flow shows a transition from in-plane to out-of-plane emission at around 100 MeV per nucleon. The directed flow changes sign at a bombarding energy between 50 and 60 MeV per nucleon and remains negative at lower energies. Molecular dynamics calculations (CHIMERA) indicate sensitivity of the global squeeze-out transition on the σ _NN and demonstrate the importance of angular momentum conservation in transport codes at low energies.     

Photoelectron spectroscopy study of Pb/Ag(1 1 1) in the submonolayer range

The vacuum deposition of Pb onto Ag(1 1 1) gives rise to two different surface structures depending on coverage and deposition temperature. At room temperature (RT), low energy electron diffraction (LEED) reveals a sharp reconstruction completed at 1/3 Pb monolayer (ML). Beyond, a close-packed Pb(1 1 1) incommensurate overlayer develops. At low temperature (LT, ∼100 K) the incommensurate structure is directly observed whatever the coverage, corresponding to the growth of close-packed two-dimensional Pb(1 1 1) islands. Synchrotron radiation Pb 5d core-level spectra clearly demonstrate that in each surface structure all Pb atoms have essentially a unique, but different, environment. This reflects the surface alloy formation between the two immiscible metals in the reconstruction and a clear signature of the de-alloying process at RT beyond 1/3 ML coverage.     

Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films

The hysteretic and reversible resistive-switching effect was observed in La_0.7Sr_0.3MnO₃ films at room temperature. The resistive switching was found to be most obvious in films fabricated at 30 Pa oxygen pressure, and more distinct in films fabricated on SrTiO₃ substrates than those fabricated on LaAlO₃ substrates. Moreover, La_0.7Sr_0.3MnO₃ films fabricated at a certain oxygen pressure with indium electrodes showed double ‘8’ type current-voltage loops. Some of the results are explained by considering the influence of the interface effect, electrodes and oxygen vacancies, but the mechanism of the double ‘8’ type current-voltage loops remains an open question.     

石墨烯封装单层二硫化钼的热稳定性研究

将单层二硫化钼用石墨烯进行封装,构造了石墨烯和二硫化钼的范德瓦耳斯异质结构,并且分别在氩气（Ar）和氢气（H₂）氛围下,详细研究了被封装的二硫化钼的热稳定性.结果表明：在氩气氛围中,石墨烯封装的二硫化钼在400–1000℃下一直保持稳定,而石墨烯和氧化硅上裸露的二硫化钼在1000℃时几乎全部分解;在氢气氛围中,石墨烯封装的二硫化钼在400–1000℃下一直稳定存在,而石墨烯和氧化硅上裸露的二硫化钼在800℃下已经完全分解.综上可得,在氩气和氢气的氛围下,被石墨烯封装的二硫化钼的热稳定性得到了显著的提高.该研究通过用石墨烯将单层的二硫化钼进行封装以提高其热稳定性,在未来以单层二硫化钼作为基础材料的电子器件中,可以保证其在高温下能够正常工作.该研究也为提高其他二维材料的热稳定性提供了一种可行的方法和思路.     

Preface to the special issue of JOGO on the occasion of the 40th anniversary of the Group for Research in Decision Analysis (GERAD).

Journal of Global Optimization -     

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.