介质膜滤波器色散特性的研究

采用信号处理的方法,对介质膜滤波器的滤波特性进行了详细的研究。介质膜滤波器是最小相位滤波器,它的幅度响应与相位响应之间存在希尔伯特变换规律,因此可以通过它的幅度响应重构它的相位响应,进而可以得到它的色散特性。为了验证理论分析,设计了射频调制法测试介质膜滤波器群速度延时的实验装置。实验测试了一个100GHz33信道的介质膜滤波器的群速度延迟。通过对实验结果与理论计算结果的对比分析,发现实验数据与理论分析吻合得比较好。最后,对介质膜滤波器的色散的特点进行了分析。     

基于光外差技术的超宽带频率响应测量系统

介绍了一种利用光外差技术测量光电探测器超宽带频率响应的测试方法。将一个可调谐外腔激光器和一个固定波长的分布反馈激光器（DFB-LD’s）产生的激光输入到光电探测器进行混频。通过对可调激光器腔长的控制,可以在光电探测器产生从DC到上百GHz的拍频信号,在无需额外校准光源的情况下就可以进行光电探测器超宽带频率响应特性的测试,这是该方法最突出的优点。实验证明该方法比较准确、简便、易于操作。在实验中,对两个不同的InGaAs p-i—n探测器进行测量,得到器件的3dB带宽分别为14．4GHz和40GHz。该测量方法对同类实验的研究和应用都具有实用意义。     

含纳米棒银溶胶的制备及其光谱性质研究

以CTAB表面活性剂胶束为模板用化学还原法制备出含有银纳米棒的银胶体,用透射电镜(TEM)对颗 粒形貌进行了表征.UV Vis吸收谱显示,含银纳米棒溶胶有两个吸收蜂,其中长波长吸收峰位置随胶粒长径比增 加迅速红移和宽化.用多尺寸统计平均的Mie散射模型计算了纳米棒银胶体的吸收谱,较好地解释了长波长吸收 峰的宽化.以此胶体为衬底材料,测量了染料分子的表面增强拉曼散射(SERS),结果显示,SERS强度随胶体中 所含纳米棒长径比的增加呈现先显著增强后缓慢减弱的变化规律,用电磁增强理论对有关现象进行了分析.     

Experimental verification of anticipated and retarded synchronization in chaotic semiconductor lasers

Experimental observation of both anticipated and retarded synchronization is demonstrated using unidirectionally coupled semiconductor lasers with delayed optoelectronic feedback. Depending on the difference between the transmission time and the feedback delay time, the lasers fall into either the anticipated or the retarded synchronization regime, where the driven receiver laser leads or lags behind the driving transmitter laser. The two regimes are observed to have the same stability of chaos synchronization in the presence of small perturbations by noise and parameter mismatches. In both regimes the observed time shift between the synchronized chaotic waveforms is found to be equal to the difference between the transmission time and the feedback delay time.     

Effect of ion impinging on the microstructure and field emission of carbon nanotubes

Effects of ion impinging on the microstructure and field electron emission properties of screen-printed carbon nanotube films were investigated. We observed that the plasma treatment modified the microstructure of CNTs along with the remarkable increase of emission site density. With the prolongation of ion impinging time, the emission current falls down first, and then rises up to higher than that of the untreated films. It is proposed that the change of emission characteristics is due to the different emission mechanisms. After the treatment, electrons are emitted predominantly from the nano-nodes on the tube wall instead from the nanotube tips.     

Surface free energies of electroless Ni–P based composite coatings

Surface free energy of a solid surface gives a direct measure of intermolecular interactions at interfaces and has a strong influence on adsorption and adhesion behaviour. However few data are available for the surface free energies of electroless Ni–P based composition coatings. In this paper, the electroless Ni–P, Ni–P-surfactant, Ni–Cu–P, Ni–P–PTFE and Ni–Cu–P–PTFE composite coatings were prepared under various coating conditions. The chemical compositions, surface morphology and thickness of the coatings were measured using an energy dispersive X-ray microanalysis (EDX), a scanning electron microscope (SEM) and a digital micrometer respectively. The contact angles of water, diiodomethane and ethylene glycol on the coatings were measured automatically using dataphysics OCA-20 contact angle analyser. The surface free energy of the coatings and their components (e.g. dispersion, polar or acid/base portions) were calculated using various methods. The experimental results showed that the incorporation of surfactant or PTFE particles into Ni–P matrixes has a significant influence on the surface free energy of the coatings, while the incorporation of copper into Ni–P matrixes has no significant influence on the surface free energy of the coatings.     

MP-C60(M=Cu,Co)化合物的合成、表征及光电性能研究

卟啉和金属卟啉不仅是良好的电子给予体,而且在紫外可见光区有着非常广泛的吸收,这有利于太阳能的利用.富勒烯(C60)由于自身独特的结构而成为较好的电子受体.近年来,大量共价键连卟啉-富勒烯D-A化合物被合成与研究[1-4].通过柔性连接体形成的卟啉-富勒烯化合物有利于增加给-受体间电子的流动性,使化合物具有优良的光电转换性能[2].中间体和产物的合成见图1.1和2的合成、纯化参照文献[2].3的合成:在N2下把37.2mg对羟基苯甲醛、75.2mg2、过量灼烧的无水碳酸钾加入30mL DMF中,80°C反应8h后,甲苯和蒸馏水分液,粗产品用硅胶柱层析,甲苯淋洗,…     

Molecular dynamics study of thermal stress and heat propagation in tungsten under thermal shock

Using molecular dynamics （MD） simulation, we study the thermal shock behavior of tungsten （W）, which has been used for the plasma facing material （PFM） of tokamaks. The thermo-elastic stress wave, corresponding to the collective displacement of atoms, is analyzed with the Lagrangian atomic stress method, of which the reliability is also analyzed. The stress wave velocity corresponds to the speed of sound in the material, which is not dependent on the thermal shock energy. The peak pressure of a normal stress wave increases with the increase of thermal shock energy. We analyze the temperature evolution of the thermal shock region according to the Fourier transformation. It can be seen that the “obvious” velocity of heat propagation is less than the velocity of the stress wave; further, that the thermo-elastic stress wave may contribute little to the transport of kinetic energy. The heat propagation can be described properly by the heat conduction equation. These results may be useful for understanding the process of the thermal shock of tungsten.     

Open critical area model and extraction algorithm based on the net flow-axis

In the integrated circuit manufacturing process, the critical area extraction is a bottleneck to the layout optimization and the integrated circuit yield estimation. In this paper, we study the problem that the missing material defects may result in the open circuit fault. Combining the mathematical morphology theory, we present a new computation model and a novel extraction algorithm for the open critical area based on the net flow-axis. Firstly, we find the net flow-axis for different nets. Then, the net flow-edges based on the net flow-axis are obtained. Finally, we can extract the open critical area by the mathematical morphology. Compared with the existing methods, the nets need not to divide into the horizontal nets and the vertical nets, and the experimental results show that our model and algorithm can accurately extract the size of the open critical area and obtain the location information of the open circuit critical area.     

Quadratic nonlinear response to 1.56-μm continuous wave laser in semi-insulating GaAs

The nonlinear photoresponse to a 1.56μm infrared continuous wave laser in semi-insulating （SI） galliu- marsenide （GaAs） is examined. The double-frequency absorption （DFA） is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the Dhotocurrent and dark current