Nucleon structure functions from high energy neutrino interactions

Structure functions obtained from high energy neutrino and antineutrino scattering from an iron target are presented. These were extracted from the combined data of Fermilab experiments E616 and E701; these utilized narrow band beam runs between 1979–1982. The structure functions are used to test the validity of quarkparton model (QPM) predictions and to extract the QCD scale parameter Λ from fits to the Altarelli-Parisi equations.     

Local-moment and itinerant antiferromagnetism in the heavy-fermion system Ce(Cu1−xNix)2Ge2

Elastic and inelastic neutron-scattering studies on the system Ce(Cu_1?xNi_x)₂Ge₂ are reported. These measurements are complemented by measurements of the magnetic susceptibility, high-field magnetization, heat capacity, thermal expansion, electrical resistivity and thermopower. The results reveal an interesting T-x phase diagram consisting of two different antiferromagnetic phases for x < 0.2 and 0.2 < x < 0.75, respectively, and a heavy-Fermi-liquid regime at higher Ni concentrations. The experimental results are interpreted in terms of an alloying-induced transition from local-moment to itinerant heavy-fermion magnetism. Fingerprints of this latter phase are a strongly reduced ordered moment and a short incommensurate ordering wave vector, in accord with theoretical predictions. A surprisingly good agreement between theory and experiment is found for x > 0.5. Further experimental evidence for different types of antiferromagnetic ordering derives from a line-shape analysis of the quasielastic neutron-scattering intensity, from magnetization and thermopower experiments.     

面心立方晶体外延膜沉积生长中失配位错的结构与形成过程

用分子动力学方法对5%负失配条件下面心立方晶体铝薄膜的原子沉积外延生长进行了三维模拟.铝原子间的相互作用采用嵌入原子法(EAM)多体势计算.模拟结果再现了失配位错的形成现象.分析表明，失配位错在形成之初即呈现为Shockley扩展位错，即由两个伯格斯矢量为〈211〉/6的部分位错和其间的堆垛层错组成，两个部分位错的间距、即层错宽度为1.8 nm,与理论计算结果一致；外延晶体薄膜沉积生长中，位错对会发生滑移，但其间距保持稳定.进一步观察发现，该扩展位错产生于一种类似于“局部熔融-重结晶”的表层局部无序紊乱- 关键词： 失配位错 外延生长 薄膜 分子动力学 铝     

Nonideal double-slope effect in organic field-effect transistors

With the development of device engineering and molecular design,organic field effect transistors(OFETs)with high mobility over 10 cm2 V-1-s-1 have been reported.However,the nonideal doubleslope effect has been frequently observed in some of these OFETs,which makes it difficult to extract the intrinsic mobility OFETs accurately,impeding the further application of them.In this review,the origin of the nonideal double-slope effect has been discussed thoroughly,with affecting factors such as contact resistance,charge trapping,disorder effects and coulombic interactions considered.According to these discussions and the understanding of the mechanism behind double-slope effect,several strategies have been proposed to realize ideal OFETs,such as doping,molecular engineering,charge trapping reduction,and contact engineering.After that,some novel devices based on the nonideal double-slope behaviors have been also introduced.     

应变对纳米铜晶界迁移的影响

用分子动力学方法模拟了金属铜纳米双晶中晶界在应变作用下的迁移过程,晶界类型为〈11l〉倾侧∑19晶界。原子问相互作用力采用Finnis-Sinclair型EAM势计算。结果表明：平行于晶界方向的压应变可以促进晶界在相邻品界交互作用下发生迁移;垂直于晶界方向的压应变则不能对晶界迁移产生明显的效果。晶界迁移大致可分为两个阶段,前阶段晶界迁移缓慢,随晶界间距减小,晶界间交互作用加强,使晶界迁移显著加速。     

无绝缘高温超导双饼线圈的瞬态电热特性分析

无绝缘高温超导线圈具有良好的电热稳定性和机械紧凑性,但其充电过程中却有明显的磁场延迟现象。为详细了解无绝缘高温超导线圈励磁过程的瞬态特性,建立了无绝缘高温超导线圈的同轴圆环等效电路模型。通过绕制一个670匝的无绝缘高温超导双饼线圈,在液氮温度下进行不同充电速率的励磁实验,初步验证了等效电路模型的正确性。基于该模型,针对线圈励磁过程的充电和恒流阶段,仿真得到了线圈各匝的径向电流分布规律和电热损耗特性。     

基于冗余多线程的体系结构级容错措施的研究与发展

在总结各种体系结构级容错措施的技术特点以及目前的研究现状和发展趋势的基础上,论述了冗余多线程(RMT)体系结构研究的时代背景、典型架构设计方法和存在的问题,以及今后研究的方向和发展趋势.提出了今后应该从资源分配和线程调度的角度对RMT进行研究,提升其整体处理能力,包括:提高RMT的容错能力;降低容错运行所需要的软、硬件代价;以及提高资源利用的效率和公平性,缓解多线程并行对资源需求的巨大压力.