KBA显微镜成像系统的成像模拟及X光成像实验的研究

KBA显微镜是一种非轴对称、非共轴的掠入射成像系统。其结构复杂,调节精度要求很高,在实际成像实验操作中难以掌握其成像特性。利用光学设计软件模拟其成像,对系统的调节和成像分析提供有益的参考。利用光学设计软件ZEMAX模拟了KBA显微镜对点源的成像过程,给出了KBA显微镜成像系统的焦深约为1 mm,景深为50 mm左右。并且由模拟可知,掠入射角对成像的影响很大。对像素尺寸约10μm的探测设备,模拟得出KBA成像系统的空间分辨力上限为3μm左右。基于星光Ⅱ装置对周期为20μm的网格靶成像,获得了KBA显微镜较为清晰的X光图像。该项工作为进一步开展掠入射成像系统的研究奠定了基础。     

Mössbauer studies on ultraporous Fe-Oxide/SiO2 aerogel

Magnetic aerogels with very low volume density of ～0.2 g/cm³ were prepared by sol-gel method and supercritical drying. The resulting materials were monolithic and displayed high surface area. By X-ray diffraction and Mössbauer spectroscopy the crystalline phase formed inside the mesopores of the SiO₂ matrix was identified as a spinel iron oxide. Comparison of the magnetic measurements with Mössbauer spectra at various temperatures contributed to the elucidation of the magnetic state of this nanocomposite system with restricted magnetic interactions, in particular its transition to a superparamagnetic state.     

掺杂对CH样品Rayleigh-Taylor不稳定性增长的影响

在神光II激光装置上进行了辐射驱动不同掺杂样品的单模Rayleigh-Taylor(RT)不稳定性实验.结果显示:与纯碳氢(CH)样品相比,掺Br的CH样品的扰动更早、更快地进入非线性区,产生二次谐波,并且掺Br比例越高,CH样品扰动进入非线性区的时间越早,相同时刻扰动的二次谐波的幅度越高.这是因为密度梯度效应抑制了二次谐波的产生,掺Br比例越高,密度梯度标长越小;同时密度梯度效应还抑制三次谐波对基模增长的负反馈,造成基模具有更大的线性增长,导致线性饱和幅值大于经典值0.1λ.     

Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors with bandpass guided‐mode resonance filters

Quantum dot infrared photodetectors can be coupled with micro‐structured filters to create narrowband sensors. Guided‐mode resonance filters based on a high‐index dielectric slab can exhibit bandpass characteristics that are suitable for monolithic integration with focal‐plane arrays. Here, patterned Ge filters were integrated with InGaAs/GaAs quantum dot detectors to linearly tune their 77 K photoresponse peaks from 5.6 µm to 6.2 µm. The dark current was not influenced by these filters but the ability to narrow the photoresponse linewidth was limited by substrate scattering, which is often encountered with front‐side illumination architectures. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of initial-state target polarization on single ionization of helium by 1-keV electron impact

We report new results of triple differential cross sections for the single ionization of helium by 1-KeV electron impact at the ejection energy of 10 eV. Investigations have been made for both the perpendicular plane and the plane perpendicular to the momentum transfer geometries. The present calculation is based on the three-Coulomb wave function. Here we have also incorporated the effect of target polarization in the initial state. A comparison is made between the present calculation with the results of other theoretical methods and a recent experiment [D黵r M, Dimopoulou C, Najjari B, Dorn A, Bartschat K, Bray I, Fursa D V, Chen Z, Madison D H and Ullrich J 2008 Phys. Rev. A 77 032717]. At an impact energy of 1 KeV, the target polarization is found to induce a substantial change of the cross section for the ionization process. We observe that the effect of target polarization plays a dominant role in deciding the shape of triple differential cross sections.     

Defect modes tuning of one-dimensional photonic crystals with lithium niobate and silver material defect

In this paper, a novel PCs defect mode is designed by inserting a Ag/LiNbO₃/Ag sandwich structure into periodically stacked TiO₂/MgF₂ dielectric superlattice. The band gap calculation is conducted using transfer matrix method. An emergence of defect mode around 525 nm is demonstrated. By applying an external voltage on this defect mode, remarkable wavelength tuning can be achieved. At normal incidence, a tuning bandwidth up to 70 nm is obtained by moderate change of external voltage from −250 to 250 V. This feature can be employed to fabricate practical tunable filters in visible region.     

金属铈催化剂对单壁纳米碳管生长和结构的影响

研究了一种利用新型催化剂制备单壁纳米碳管（SWNTs）的工艺方法.将金属铈的氧化物（Ce O₂）与石墨粉按一定比例混合，填充到已打好孔的石墨棒中制成复合石墨电极 ，以其为阳 极在高温氦电弧中实施电弧放电.放电后的生成物经高分辨透射电子显微镜（HRTEM）和拉曼 光谱(Raman)的观察及分析表明：生成物中含有大量呈束状存在的单壁纳米碳管，管径均匀 ，平均直径为120—132nm. 关键词： 单壁纳米碳管 电弧放电 透射电镜分析     

Highly efficient Cherenkov radiation generation in the irregular point of hollow-core photonic crystal fiber

Highly efficient Cherenkov radiation(CR) is generated by the soliton self-frequency shift(SSFS) in the irregular point of a hollow-core photonic crystal fiber(HC-PCF) in our laboratory.The impacts of pump power and wavelength on the CR are investigated,and the corresponding nonlinear processes are discussed.When the average power of the 120 fs pump pulse increases from 500 mW to 700 mW,the Raman soliton shifts from 2210 nm to 2360 nm,the output power of the CR increases by 2.3 times,the maximum output power ratio of the CR at 539 nm to that of the residual pump is calculated to be 24.32:1,the width of the output optical spectrum at the visible wavelength broadens from 35 nm to 62 nm,and the conversion efficiency η of the CR in the experiment can be above 32%.