基于不完备频响函数的结构损伤统计识别研究

基于不完备频响函数数据,结合概率统计方法,提出了一种能同时考虑模型参数不确定性和测试噪声影响的结构损伤统计识别方法.首先,基于频响函数某一行向量在不同频率下的幅值数据,利用矩阵拉直运算建立了关于损伤系数的确定性识别方程.其次,假设模型参数误差和测试噪声为零均值的高斯随机变量,根据摄动理论,推导了损伤后结构刚度参数的前二...     

Phenolic Constituents,Antioxidant and Cytoprotective Activities,Enzyme Inhibition Abilities of Five Fractions from Vaccinium dunalianum Wight

The bud of Vaccinium dunalianum Wight has been traditionally consumed as health herbal tea by “Yi” people in Yunnan Province, China, which was locally named “Que Zui tea”. This paper studied the chemical constituents of five fractions from Vaccinium dunalianum, and their enzyme inhibitory effects of α-glucosidase and pancreatic lipase, antioxidant activity, and cytoprotective effects on H₂O₂-induced oxidative damage in HepG2 cells. The methanol extract of V. dunalianum was successively partitioned with petroleum ether (PF), chloroform (CF), ethyl acetate (EF), n-butanol (BF), and aqueous (WF) to obtain five fractions. The chemical profiling of the five fractions was analyzed by ultra-high-performance liquid chromatography coupled with a tandem mass spectrometry (UHPLC-MS/MS), and 18 compounds were tentatively identified. Compared to PF, CF, BF and WF, the EF revealed the highest total phenols (TPC) and total flavonoids (TFC), and displayed the strongest enzyme inhibition ability (α-glucosidase and pancreatic lipase) and antioxidant capacity (DPPH, ABTS and FRAP). Furthermore, these five fractions, especially EF, could effectively inhibit reactive oxygen species (ROS) production and cell apoptosis on H₂O₂-induced oxidative damage protection in HepG2 cells. This inhibitory effect might be caused by the up-regulation of intracellular antioxidant enzyme activity (CAT, SOD, and GSH). The flavonoids and phenolic acids of V. dunalianum might be the bioactive substances responsible for enzyme inhibitory, antioxidant, and cytoprotective activities.     

(Ni0.81Fe0.19)1-xCrx作为种子层对NiFe/FeMn交换偏置的影响

采用一种新的种子层材料:(Ni081Fe019)1-xCrx,通过改变种子层中Cr原子的含量,使得在其上生长的NiFeFeMn双层膜的织构和晶粒尺寸产生极大的差异,系统研究了NiFeFeMn双层膜中FeMn晶粒尺寸和织构对交换偏置的影响.实验结果表明,在FeMn的γ相(111)织构较好的前提下,交换偏置场的大小与织构的差异没有关系;FeMn的晶粒尺寸对交换偏置场有很大影响,较小的反铁磁层晶粒对交换偏置场有利,过大的反铁磁层晶粒不利于交换偏置场.将(Ni081Fe019)05Cr05与传统的种子层材料Ta进 关键词： 交换偏置 晶粒尺寸 织构 种子层     

Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

SiN_x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN_x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN_x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

Controlled decoherence of three-level rf-SQUID qubit with asymmetric potential

A scheme is proposed to controll the decoherence of three-level rf-SQUID qubit with asymmetric potential by designing an external electric circuit for superconductive flux qubit. The results show that it may not only raise the gate speed but also extend decoherence time for a three-level structure.     

Antiinflammation Derived Suzuki-Coupled Fenbufens as COX-2 Inhibitors: Minilibrary Construction and Bioassay

A small fenbufen library comprising 18 compounds was prepared via Suzuki Miyara coupling. The five-step preparations deliver 9–17% biphenyl compounds in total yield. These fenbufen analogs exert insignificant activity against the IL-1 release as well as inhibiting cyclooxygenase 2 considerably. Both the para-amino and para-hydroxy mono substituents display the most substantial COX-2 inhibition, particularly the latter one showing a comparable activity as celecoxib. The most COX-2 selective and bioactive disubstituted compound encompasses one electron-withdrawing methyl and one electron-donating fluoro groups in one arene. COX-2 is selective but not COX-2 to bioactive compounds that contain both two electron-withdrawing groups; disubstituted analogs with both resonance-formable electron-donating dihydroxy groups display high COX-2 activity but inferior COX-2 selectivity. In silico simulation and modeling for three COX-2 active—p-fluoro, p-hydroxy and p-amino—fenbufens show a preferable docking to COX-2 than COX-1. The most stabilization by the p-hydroxy fenbufen with COX-2 predicted by theoretical simulation is consistent with its prominent COX-2 inhibition resulting from experiments.     

Influence of the tangential velocity on the compressible Kelvin−Helmholtz instability with nonequilibrium effects

Kelvin−Helmholtz (KH) instability is a fundamental fluid instability that widely exists in nature and engineering. To better understand the dynamic process of the KH instability, the influence of the tangential velocity on the compressible KH instability is investigated by using the discrete Boltzmann method based on the nonequilibrium statistical physics. Both hydrodynamic and thermodynamic nonequilibrium (TNE) effects are probed and analyzed. It is found that, on the whole, the global density gradients, the TNE strength and area firstly increase and decrease afterwards. Both the global density gradient and heat flux intensity in the vertical direction are almost constant in the initial stage before a vortex forms. Moreover, with the increase of the tangential velocity, the KH instability evolves faster, hence the global density gradients, the TNE strength and area increase in the initial stage and achieve their peak earlier, and their maxima are higher for a larger tangential velocity. Physically, there are several competitive mechanisms in the evolution of the KH instability. (i) The physical gradients increase and the TNE effects are strengthened as the interface is elongated. The local physical gradients decrease and the local TNE intensity is weakened on account of the dissipation and/or diffusion. (ii) The global heat flux intensity is promoted when the physical gradients increase. As the contact area expands, the heat exchange is enhanced and the global heat flux intensity increases. (iii) The global TNE intensity reduces with the decreasing of physical gradients and increase with the increasing of TNE area. (iv) The nonequilibrium area increases as the fluid interface is elongated and is widened because of the dissipation and/or diffusion.     

反应磁控溅射制备TiO2和Nb2O5混合光学薄膜

利用反应磁控溅射技术在BK-7基片上制备了二氧化钛和五氧化二铌均匀混合的光学薄膜.薄膜的内部微结构、表面形貌、化学成分比例以及光学性质等用X射线衍射、高分辨扫描电子显微镜、原子力显微镜、X射线光电子能谱和紫外可见近红外分光光度计进行研究;发现制备的薄膜为非晶结构,薄膜的表面平整、内部结构致密,不存在柱状结构或结晶颗粒的缺陷,TiO2与Nb2O5的成分比例大致是1∶1.54.从光学透射光谱计算的折射率和消光系数显示,在550 nm波长处的折射率为2.34,消光系数为2.0×10－4.结果表明制备的薄膜是TiO2和Nb2O5均匀混合的高质量光学薄膜.     

甘氨酸与水分子间相互作用的理论研究

在密度泛函(DFT)B3LYP/6_311++G(3d,3p)水平,对中性甘氨酸的最小点结构Ip和H2O分子间可能存在的氢键复合物进行全自由度能量梯度优化,发现了三个氢键极小结构A、C和E,其中结构A为最稳定结构,它是H2O与甘氨酸的羧基(-COOH)形成两个氢键的结构,具有C1对称性.分别采用密度泛函理论(DFT)和MP2方法,在6-311++G(3d,3p)水平,对结构A的结构和结合能进行了比较计算,得到结合能ΔEDFT为-41.88 kJ/mol,ΔEMP2为-40.34 kJ/mol.     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.