Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into Ti_xSi_y substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 °C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers.     

Retracted: Determination of scutellarin isomer,a predominant metabolite of scutellarin,in human plasma by HPLC/tandem mass spectrometry and its application to a pharmacokinetic study in Chinese healthy volunteers

Retraction: The following article from Biomedical Chromatography, “Determination of scutellarin isomer, a predominant metabolite of scutellarin, in human plasma by HPLC/tandem mass spectrometry and its application to the pharmacokinetic study in Chinese healthy volunteers” by Chun‐hua Xia, Yu‐qing Xiong, and Guang‐ji Wang, published online on 21 June 2007 in Wiley Interscience (www.interscience.wiley.com/journal/bmc), has been retracted at the authors' request.     

LIMITING BEHAVIOR OF UNIFORM RECURSIVE TREES

The authors consider the limiting behavior of various branches in a uniform recursive tree with size growing to infinity.The limiting distribution ofζ_(n,m),the number of branches with size m in a uniform recursive tree of order n,converges weakly to a Poisson distribution with parameter 1/m with convergence of all moments.The size of any large branch tends to infinity almost surely.     

NFZ-10工业辐照电子直线加速器

研制的电子直线加速器ＮＦＺ－１０的辐照加工能力相当于３０ＰＢｑ的６０Ｃｏ源，电子束能量为４～１２ＭｅＶ，平均束功率为３ｋＷ，扫描宽度为１ｍ，能量不稳定度≤±０．５％，束流不稳定度≤±０．６％，扫描不均匀度≤±２．５％。ＮＦＺ－１０加速器已被用于辐照各种电力半导体器件，一年多来运行稳定可靠并获得较好的经济效益。     

A Novel Method to Synthesize Polyorganozircosilazane

A new kind of polyorganozircosilazane as Si/Zr/C/N-based ceramic precursor was synthesized from the condensation reaction of hexamethyleyclotrisilazane lithium salts(D3^NLi）and zirconium tetrachloride(ZrCl4).In the presence of N,N,N’,N’-tetramethyl ethylene diamine(TMEDA),polyorganozircosilazane was obtained in high yield.     

Optimality for set functions with values in ordered vector spaces

Let (X, , ) be a finite atomless measure space,L a convex subfamily of , andY andZ locally convex Hausdorff topological vector spaces which are ordered by the conesC andD, respectively. LetF:LY beC-convex andG:LZ beD-convex set functions. Consider the following optimization problem (P): minimizeF(), subject to L andG() _D . The paper generalizes the Moreau-Rockafellar theorem with set functions. By applying this theorem, a Kuhn-Tucker type optimality condition and a Fritz John type optimality condition for problem (P) are established. The duality theorem for problem (P) is also studied.This work was partially supported by National Science Council, Taipei, Taiwan. This paper was written while the first author was visiting at the University of Iowa, 1987-88.The authors would like to express their gratitude to the two anonymous referees for their valuable comments. Also, they would like to thank Professor P. L. Yu for his encouragement and suggestions which improved the material presented here considerably.