DICSI station at KCSR and NT: Determination of optimal requirements to the formation of an SR beam using cylindrical x-ray optical zoom lenses

To modernize the DICSI station, new hardware and software have been created according to the conditions of the operating storage ring “Sibir’-2” beam channel. The recording system has been successfully tested on the operating channel of the storage ring VEPP-3 (Budker Institute of Nuclear Physics Siberian Branch, Russian Academy of Sciences, Novosibirsk) using the time-resolved “diffraction cinema” technique in studying real biological objects in the static and dynamic modes of data accumulation. At the DICSI station, structural changes in medical and biological objects are permanently investigated. The specific structure dimensions of these objects are in the nanometric range.     

The influence of crystalline grain size on the thermal stability of the Er<Subscript>0.45</Subscript>Ho<Subscript>0.55</Subscript>Fe<Subscript>2</Subscript> compound

The phase composition and the temperature dependence of the magnetization of the Er_0.45Ho_0.55Fe₂ compound in coarse-grained, microcrystalline, and submicrocrystalline states are investigated experimentally. It is found that, upon heating under vacuum, the Er_0.45Ho_0.55Fe₂ microcrystalline powder with a crystalline grain size of ∼1 μm undergoes decomposition into pure iron and rare-earth (erbium and holmium) oxides and nitrides at a temperature of 500 K. The changes observed in the phase composition of the microcrystalline powder due to annealing are confirmed by x-ray diffraction analysis. Heating of the Er_0.45Ho_0.55Fe₂ submicrocrystalline sample leads to a partial change in the phase composition. The phase composition of a large crystal (∼1 mm in size) remains unchanged upon heating to 1080 K. It is shown that the thermal stability of the Er_0.45Ho_0.55Fe₂ compound depends on the crystalline grain size. __________ Translated from Fizika Tverdogo Tela, Vol. 44, No. 6, 2002, pp. 1060–1063. Original Russian Text Copyright ? 2002 by Mulyukov, Sharipov, Korznikova.     

Muonium states in semiconductor crystals: Quantum-chemical calculations

The electronic structure of muonium (Mu) located at the bond-centered sites of the silicon and diamond crystals is calculated by the intermediate neglect of differential overlap method. Calculations of the electronicg- and hyperfine interaction tensors of the impurity atom are performed. The results obtained are compared to the experimental properties of “anomalous” muonium Mu^*. It is shown that the properties of Mu located at the bond-centered sites of the Si and C lattices are in qualitative agreement with the observed properties of Mu^*.     

Planar nematic anchoring on SiO-coated substrates

Summary The nematic planar anchoring is usually explained by using simple elastic models: the surface easy axis corresponds to the surface direction that minimizes the excess of nematic elastic energy. When anisotropic rough substrates are used to align nematic liquid crystals, due to the complex surface morphology, usual elastic models are not directly applicable. This paper presents quantitative topographical data of rough substrates, obtained with oblique SiO evaporation under vacuum for nematic planar anchoring. Experimental data are obtained by means of Atomic Force Microscopy and they are used to demonstrate the self-affine nature of these substrates and to relate the nematic anchoring with the anisotropy of the local fractal properties of the substrate itself. Paper presented at the I International Conference on Scaling Concepts and Complex Fluids, Copanello, Italy, July 4–8, 1994.     

OSCILLATION CONVERGENT THEOREMS FOR THE V^2-INTEGRAL

The V^t-integral as defined in[2], which is eqnivalent to M^2-integrsl as defined in Trigonometre series by Zygmund is used to sum trigonometric seies in[1]. In this paper, some convergent theorems of V^2-integral are established.     

Low-energy ion-assisted control of interfacial structures in metallic multilayers

A molecular dynamics method has been used to simulate the argon ion-assisted deposition of Cu/Co/Cu multilayers and to explore ion beam assistance strategies that can be used during or after the growth of each layer to control interfacial structures. A low-argon ion energy of 5–10 eV was found to minimize a combination of interfacial roughness and interlayer mixing (alloying) during the ion-assisted deposition of multilayers. However, complete flattening with simultaneous ion assistance could not be achieved without some mixing between the layers when a constant ion energy approach was used. It was found that multilayers with lower interfacial roughness and intermixing could be grown either by modulating the ion energy during the growth of each metal layer or by utilizing ion assistance only after the completion of each layers deposition. In these latter approaches, relatively high-energy ions could be used since the interface is buried and less susceptible to intermixing. The interlayer mixing dependence upon the thickness of the over layer has been determined as a function of ion energy.