Ce3Rh3Si2和CeRh3Si2的磁性模拟和晶场效应研究

根据晶场理论,通过对D.Kaczorowski等人测量的磁化率倒数与温度关系曲线的模拟,得到了稀土化合物CeRh3Si2和Ce3Rh3Si2的晶场分裂能和相应波函数.对于CeRh3Si2和Ce3Rh3Si2,它们的第一激发能和总的激发能分别为176K,855K和77.5K,428K.计算表明,Kramers离子Ce3+在晶场效应的作用下,基态简并部分消除得到了三个双重态,模拟得到的化合物的磁化率倒数与温度关系曲线与实验曲线吻合较好.     

Electronic Structure and Optical Properties of Antimony-Doped SnO_2 from First-Principle Study

A first-principles study has been performed to calculate the electronic and optical properties of the SbxSn1xO system.The simulations are based upon the method of generalized gradient approximations with the Perdew-Burke-Ernzerhof form in the framework of density functional theory.The supercell structure shows a trend from expanding to shrinking with the increasing Sb concentration.The increasing Sb concentration induces the band gap narrowing.Optical transition has shifted to the low energy range with increasing Sb concentration.Other important optical constants such as the dielectric function,reflectivity,refractive index,and electron energy loss function for Sb-doped SnO2 are discussed.The optical absorption edge of SnO2 doped with Sb also shows a redshift.     

长距离光纤CATV系统中色散补偿位置的研究

研究了1 550 nm长距离光纤CATV系统中由自相位调制和色散引起的组合二阶互调劣化及其补偿问题.得出了在自相位调制和色散情况下,多级掺铒光纤放大器级联的光纤CATV系统组合二阶互调指标的计算公式.在采用啁啾光栅进行色散补偿时,对该组合二阶互调计算公式进行了修正.分析结果表明,色散补偿器的位置对补偿效果具有很大影响,理论模型计算可以得出色散补偿器的最佳位置,计算结果得到了系统仿真的验证.     

A Criterion for Stability of Synchronization and Application to Coupled Chua＇s Systems

We investigate synchronization in an array network of nearest-neighbor coupled chaotic oscillators. By using of the Lyapunov stability theory and matrix theory, a criterion for stability of complete synchronization is deduced. Meanwhile, an estimate of the critical coupling strength is obtained to ensure achieving chaos synchronization. As an example application, a model of coupled Chua＇s circuits with linearly bidirectional coupling is studied to verify the validity of the criterion.     

金属管(杆)横驻波演示实验

对两端自由金属管(杆)弯曲振动实验进行了分析,对观察到的现象给出了相应的解释.     

Experimental Determination of the Radiative Correction Factor Δr and Phenomenological Analyses

In this paper the experimental value of radiative correction Δr was derived from the new data of sin ²θ_w and W boson mass M_w given by LEP,CDF and other collaborations.A careful comparison of (Δr)_exp with the standard model expectation was carried out.We first calculated the Δr at full one-loop level,and then the main two-loop contributions were included.More stringent upper bounds on M_t were obtained from the analysis of probability distribution:M_t175GeV at 95%C.L. for a given M_H=100GeV.The effects on N_t from other experimental and theoretical errors were also computed.     

氟化锂和蓝宝石单晶冲击消光及其对辐射测温的影响

采用冲击波压缩原位光源技术结合时间分辨多波长高温计测量,研究了氟化锂和蓝宝石单晶样品的冲击消光现象,实验压力范围50～183了GPa,中心波长覆盖254～800 nm.结果表明,氟化锂单晶样品在实验压力下透过率变化不大,对界面温度的拟合值影响不明显,只是使表观发射率略有下降;当压力低于90GPa时,蓝宝石的消光情况同氟化锂接近,对界面温度的拟合影响也不明显;而当压力高于99 GPa时,蓝宝石呈现明显的消光衰减现象,实验测定的消光系数随压力增加而增加,与波长间呈反比关系,与文献报道250 0Pa高压消光特性一致.研究还发现,蓝宝石窗高压消光行为对界面温度的测量存在较大的影响,使得拟合温度明显偏低.本文研究对发展非透明材料冲击测温技术具有一定的参考价值.     

High-power ultraviolet 278 nm laser from fourth-harmonic generation of a Nd:YAG laser in CsB3O5

We demonstrate a high-power UV 278 nm laser by fourth-harmonic generation (FHG) of a 1112 nm Nd:YAG laser in a nonlinear optical (NLO) crystal CsB3O5 (CBO) for the first time, to our best knowledge. A 30 W level diode-pumped Q-switched Nd:YAG laser at 1112 nm with beam quality factor M2=1.2 was used as the fundamental light source at a pulse width of 500 ns. With an LiB3O5 crystal, the 1112 nm laser was first frequency-doubled to 556 nm with an average output power of 13.5 W. It was then frequency doubled again in a CBO crystal to obtain the FHG output at 278 nm. The maximum average output power of the 278 nm laser is up to 1.5 W. The results demonstrated that CBO crystal is a promising NLO material for UV high-power lasers below 300 nm.     

光子四维量子态隐形传输

多维量子纠缠态比二维纠缠态可加载更多的信息,多维量子系统是量子信息处理中一个很重要的资源,本文采用已实现的光子四维纠缠态,给出了光子四维量子态的张量表达式,并描述了四维量子态隐形传输的一般表示方法;通过讨论光子四维量子态系统的量子通道参数矩阵和测量矩阵的特性,得到实现完全传输和非零概率传输的充要备件,最后,本文给出在多种量子通道下的四维态的量子隐形传态方案,这一过程在张量分析表示下十分清晰明了.     

金属-电介质约束的半导体微盘激光器

设计了一种以半导体材料InGaAsP作为核心结构的器件表面蒸镀二氧化硅膜层,在其上蒸镀金膜层,构成金属电介质半导体微盘激光器结构,盘面的厚度为2μm,盘面半径为6 μm ,盘壁侧表面与底面的夹角为45°.使用有限元法对该结构器件的回音壁模式进行数值研究.利用所谓“偏微分方程的弱项形式”有效地抑制了许多局域不变性相关的“伪解”.通过数值求解弱项型矢量亥姆霍兹方程,得到微盘激光器回音壁模式的横磁场分布,在此基础上讨论了其品质因数(Q值)、模体积、不同金属和电介质膜厚度对器件品质因数的影响、盘的半径和其品质因素的关系等相关量,理论计算表明,这种结构的器件较直接在介质表面蒸镀金属膜层结构的器件的品质因数高2～3倍,实验还获得了基阶和高阶的表面等离子体波模式,以及品质因数最大达到约5100的光学-电介质基模.