喷气Z箍缩内爆等离子体的雪铲模型

 在喷气Z pinch内爆等离子体研究中，雪铲模型是一种常用的、比较简单的物理模型。根据实验中提供的电流波形，负载线质量和初始半径，可以通过雪铲模型来估算内爆到心的时刻。根据一维运动方程和不同构形下的解析解以及部分实验结果相结合，讨论了雪铲模型的适用范围。数值计算的内爆时间和实验（Gamble II, Double EAGLE, BLACKJACK 5）测量值符合得较好。结果表明，雪铲模型在喷气Z pinch实验的负载优化设计研究中是很有参考价值的方法。     

Vibrational spectrum of uridine obtained by means of nonresonant-background-free CARS spectroscopy

Received: 18 June 1996/Revised version: 3 January 1997     

处理原子-辐射场相互作用系统的变分方法

用Heisenberg-Weyl(简H-W)群直积SU(2)群上的相干态表述了原子-辐射场相互作用系统的非平衡态统计力学.引入一个新定义的含时分布函数,将非平衡态下密度矩阵所满足的von Neumann方程转化成可分离变量的偏微分方程,给出了方程的形式解,算符的平均值表示.本文还就便于作微扰展开的相互作用绘景作了讨论.     

纳米晶软磁合金中的结构对技术磁性的影响——Ⅱ.磁弹耦合作用

对磁弹耦合在决定纳米晶软磁合金宏观磁性中的作用进行了探讨,高场磁化规律以及正电子湮没测量表明:对Fe_73.5Cu₁Nb₃Si_13.5B₉合金,准位错偶极子造成的应力场对畴壁的钉扎效应是造成纳米晶软磁合金矫顽力的重要原因;结构缺陷造成的应力场与磁致伸缩的耦合作用对纳米晶软磁性能有重要的影响.在结构各向异性和磁弹耦合能共同作用下可解释纳米晶合金表现出最佳软磁性能.     

Low-Temperature Magnetic Properties of Co Antidot Array

Cobalt antidot arrays with different thicknesses are fabricated by rf magnetron sputtering onto porous alumina substrates. Scanning electron microscopy and grazing incidence x-ray diffraction are employed to characterize the morphology and crystal structure of the antidot array, respectively. The temperature dependence of magnetic properties shows that in the temperature range 5K--300K, coercivity and squareness increase firstly, reach their maximum values, then decrease. The anomalous temperature dependences of coercivity and squareness are discussed by considering the pinning effect of the antidot and the magnetocrystalline anisotropy.     

Investigation of Scale Exponents of Complete and Incomplete Aggregation-Annihilation Processes

The complete and incomplete aggregation-annihilation processes are investigated with the method of generating function, and the scale exponents are obtained exactly. We find that the scale exponents of incomplete aggregation-annihilation process are different from the previous exponents obtained by different methods. The time dependence of the total number of clusters and the total mass of clusters are analytically obtained.     

Application of N,N‐bis(diphenylphosphino)aniline palladium(II) complexes as pre‐catalysts in Heck coupling reactions

Palladium(II) complexes with N,N‐bis(diphenylphosphino)aniline ligands catalyse the Heck reaction between styrene and aryl bromides, affording stilbenes in good yield. The structures of two of the complexes used as pre‐catalysts have been determined by single‐crystal X‐ray diffraction. Copyright © 2007 John Wiley & Sons, Ltd.     

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.