CsI(Tl)晶体中反冲Cs和I核Quenching?Factor的测量

许多实验对用CsI(Tl)闪烁晶体作为探测器来寻找和探测暗物质的可行性进行了研究.本工作利用8MeV单能中子轰击CsI(Tl)晶体探测器来研究Cs核和I核的QuenchingFactor.在数据处理中,运用脉冲形状甄别(PSD)方法来分辨反冲核信号和本底信号.实验结果表明,在7keV到132keV的能区中,Quench ingFactor随着反冲核能量的减少而增加.在探测暗物质的实验中,这一性质对于CsI(Tl)晶体探测器获得较低的能量阈值是很有利的.     

空心阴极灯激发的微波等离子体炬原子/离子荧光光谱研究--钙的原子/离子荧光光谱

用强短脉冲供电技术的空心阴极灯作激发源、微波等离子体炬作原子／离子化器，建立了原子／离子荧光光谱实验装置。详细研究了微波等离子体功率、观察高度、空心阴极灯电流等因素对原子／离子荧光信号强度的影响，测量了系统对Ca的原子／离子荧光光谱的检出限。     

新兴的纳米结构亚波长光学器件及其发展

介绍了新颖的纳米结构亚波长光学器件的特点,从器件的基本功能特性和工作机理两个方面详细讨论了其应用状况,并阐述了纳米制造技术对亚波长光学器件发展的重要推动作用及这一领域今后的研究热点。     

双色激光场中1维共线氢分子离子的经典动力学研究

 运用经典理论方法，并采用辛算法数值求解了双色激光场作用下1维共线氢分子离子(H₂⁺)的哈密顿正则方程，得到了氢分子离子在激光场下的经典轨迹。计算了单色场和双色场下氢分子离子(H₂⁺)的存活几率、电离几率、解离几率、库仑爆炸几率随时间的演化，分析了双色场的相位、强度、强度比及倍频的变化对氢分子离子动力学行为的影响,并给出了相应的物理解释。     

基于远场的拼接光栅压缩池的设计

 利用傅里叶光学方法得到了失调拼接光栅压缩池输出光束的远场振幅表达式，建立了分析拼接光栅的各种误差的理论模型，得到了拼接误差对脉冲的影响是附加相位延迟和角度偏转。在要求远场的一倍衍射极限区域的积分能量分布达到理想情况下的90％的条件下，对于含有口径为40 cm、脉宽为0.1~10 ps脉冲的系统进行分析并分别得到了各种误差的容限。     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Advances in micro-perforated panel absorbers

Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century.     

图有分数因子的度条件

本文研究了图有分数因子的度条件,得到了下面的结果：令k(?)1是一个整数,G是一个连通的n阶图,n(?)4k-3且最小度δ(G)(?)k,若对于每一对不相邻的顶点u,v∈V(G)都有max{d_G(u),d_G(v)}(?)n/2,则G有分数k-因子．并指出该结果在一定意义上是最好可能的。     

从 ${\cal B}^0$ 到 $E(p,q)$ 和 $E_0(p,q)$ 空间的复合算子

设 $\varphi$ 是单位园盘 $D$ 到自身的解析映射, $X$ 是 $D$ 上解析函数的 Banach 空间, 对 $f\in X$, 定义复合算子$C_\varphi $ : $C_\varphi (f)=f\circ \varphi$. 我们利用从 ${\cal B}^0$到 $E(p,q)$ 和 $E_0(p,q)$ 空间的复合算子研究了空间 $E(p,q)$ 和 $E_0(p,q)$, 给出了一个新的特征.     

电感耦合等离子体原子发射光谱法测定中药方剂煎煮液中的微量元素

本文采用HNO3－H2O2对中药方剂煎煮液进行处理，拟定了电感耦合等离子体原子发射光谱法同时测定试样中12个微量元素的方法，选择了仪器的最佳工作条件，考察了基本效应的影响。在选定条件下，12个微量元素的检出限为0．10－5．0ng/g，相对标准偏差为0.10%-9.5%(n=10),加标回收率为85％－103％。该方法简单、快速，已用于大量样品的检测，分析结果满意。