Measurement of Magnetic Properties of an Inertial Sensor with a Torsion Balance

A torsion balance is constructed to accurately measure the magnetic properties of the real proof mass of the inertial sensor. The magnetic susceptibility and remnant moment of a titanium proof mass are measured in the first experiment, and further improvements and the potential sensitivity are also discussed. This is significant for choosing the material of the proof mass and investigating the magnetic disturbances acting on the proof mass.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Bulk Modulus and Electronic Band Structure of ZnGa2X4(X=S,Se): a First-Principles Study

First-principles local density functional calculations are presented for the compounds ZnGa₂X₄ (X=S,Se). We investigate the bulk moduli and electronic band structures in a defect chalcopyrite structure. The lattice constants and internal parameters are optimized. The electronic structures are analysed with the help of total and partial density of states. The relation between the cohesive energy and the unit cell volume is obtained by fully relaxed structures. We derive the bulk modulus of ZnGa₂X₄ by fitting the Birch-Murnaghan's equation of state. The extended Cohen's empirical formula agrees well with our ab initio results.     

Spatial Soliton Solutions in a Harmonic Potential

The F-expansion technique and the homogeneous nonlinear balance principle have been applied for solving a general （19-1）-dimensional nonlinear Schrodinger equation （NLSE） with varying coetficients and a harmonic potential. A family of （1＋1）D spatial solitons has been obtained. The evolution features of exact solutions have been investigated.     

Bulk Modulus and Electronic Band Structure of ZnGa2Xa （X=S,Se）： a First-Principles Study

First-principles local density functional calculations are presented for the compounds ZnGa2X4 （X = S, Se）. We investigate the bulk moduli and electronic band structures in a defect chalcopyrite structure. The lattice constants and internal parameters are optimized. The electronic structures are analysed with the help of total and partial density of states. The relation between the cohesive energy and the unit cell volume is obtained by fully relaxed structures. We derive the bulk modulus of ZnGa2Xa by fitting the Birch-Murnaghan＇s equation of state. The extended Cohen＇s empirical formula agrees well with our ab initio results.     

Dependence of Junction Voltage Saturation on Uniformity and Quality of Laser Diode Bars

The dependence of the sinkage at the threshold of the electric derivative curve （IdV/dI-I） on the uniformity and the quality of the laser diode bar is analyzed. By using the equations derived from the equivalent circuits of the bars, the influence of the bar uniformity on the depth of the dip is investigated in theory under certain conditions. Furthermore, the experimental results based on the presented technique indicate that the depth of the dip is interrelated to the uniformity and the quality of the corresponding bar. The present technique can be used conveniently and effectively to measure the laser diode bars in practice.     

海绵Sigmadocia sp.中的新神经酰胺的结构确定

从南海海绵Sigmadocia sp．中分离得到两个新的神经酰胺、通过IR．ID NMR,2D NMR．FAB MS等波谱和化学方法,确定了它们的结构分别为N-(正-二十二碳酰基)-2-氨基-正-二十烷-1,3、4,5-四羟醇(1)和N-(2‘-羟基-正-二十二碳酰基)-2-氨基-正-十八烷-1．3．4-三羟醇(2）。     

基于双层类脂膜的去甲肾上腺素传感器

报道了去甲肾上腺素 (NE)在月桂酸 -双层类脂膜修饰的玻碳电极上的电化学行为 ,在 +0.6～ -0.2V(vs.Ag/AgCl)电位范围内 ,于pH7.0的0.01mol/L的KH2PO4-Na2HPO4 底液中 ,去甲肾上腺素产生很灵敏的氧化峰电流。氧化峰电流与去甲肾上腺素浓度在1.7×10 -5～5.9×10 -4mol/L范围内呈良好线性关系。该电极可作为检测去甲肾上腺素的新型高灵敏度电化学生物传感器     

高效液相色谱-电喷雾三级四极杆质谱测定鸡肉组织中氯霉素残留的研究

建立了鸡肉组织中氯霉素残留的液相色谱-电喷雾质谱联用(LC—ESI—MS—MS)测定法。采用微量化前处理方法,省去固相萃取步骤,以m／z321．0为母离子,m／z152．1、257．0和194．1为子离子,采用多反应监测(MRM)负离子模式对鸡肉组织中的氯霉素残留进行检测、方法的检出限为0．010μg／kg(S／N≥3),定量下限为0．10μg／kg,线性范围为0．100～1．00μg／L,加标回收率为74．3％～84．0％,相对标准偏差(n=6)为7．9％～12．7％。该法具有操作简便、有机试剂消耗量少、测定周期短等优点。     

毛细管电泳检测大鼠大脑皮质中三磷酸腺苷二钠含量的动态变化

本文建立了大鼠大脑皮质中三磷酸腺苷二钠(ATP)检测的毛细管电泳方法。以89 mmol/L Tris,89 mmol/L硼酸,2 mmol/L EDTA组成的缓冲液(1×TBE,pH8.0)为分离电解质,在聚丙烯酰胺涂层毛细管上,ATP能与样品中的其它组分高效分离。ATP的浓度在0.5~10μg/mL范围内其峰面积和浓度有良好的线性关系。方法的检出限为0.04μg/mL。ATP迁移时间和峰面积的相对标准偏差分别为0.8%和5.7%(n=5)。探讨了脑缺血再灌流后ATP含量的变化规律,结果表明短暂脑缺血再灌流后存在着继发性能量衰竭的现象。